Ting Fan Liu

7783106, Aug 24, 2010

Nov 12, 2004

10/987688

Matthew L. Cooper - San Francisco CA, US
Ting Liu - Pittsburgh PA, US
Eleanor G. Rieffel - Mountain View CA, US

Fuji Xerox Co., Ltd. - Tokyo

G06K 9/34
G06K 9/62
G06K 9/00
H04N 5/14
H04N 9/64

382173, 382159, 382181, 382197, 382224, 382225, 348700

Techniques for media segmentation are disclosed. A number of measures used to generate similarity values are compared. Two different approaches to calculate feature vectors based on pairwise frame similarity in combination with different kernel functions are disclosed. A supervised classification method is used with the feature vectors to assess segment boundaries.

8575473, Nov 5, 2013

Sep 14, 2012

13/618496

Rebecca Elizabeth Jones - Mountain View CA, US
Homan Bernard Yuen - Sunnyvale CA, US
Ting Liu - Santa Clara CA, US
Pranob Misra - Milpitas CA, US

Solar Junction Corporation - San Jose CA

H01L 31/00

136255, 136262, 136249

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0. 9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0. 07≦x≦0. 18, 0. 025≦y≦0. 04 and 0. 001≦z≦0. 03.

20080288522, Nov 20, 2008

Jan 31, 2008

12/023301

Herbert Dennis Hunt - San Francisco CA, US
John Randall West - Sunnyvale CA, US
Marshall Ashby Gibbs - Clarendon Hills IL, US
Bradley Michael Griglione - Lake Zurich IL, US
Gregory David Neil Hudson - Riverside IL, US
Andrea Basilico - Como, IT
Arvid C. Johnson - Frankfort IL, US
Cheryl G. Bergeon - Arlington Heights IL, US
Craig Joseph Chapa - Lake Barrington IL, US
Alberto Agostinelli - Milano, IT
Jay Alan Yusko - Lombard IL, US
Trevor Mason - Bolingbrook IL, US
Ting Liu - Downers Grove IL, US

G06F 17/30

707101, 707E17005

A method for reading the altered data field in accordance with the field alteration data is provided. The method may include altering a data field characteristic of a data field in a data table, saving the field alteration datum associated with the alteration in a data storage facility, submitting a query requiring the use of the data field in the dataset and reading the altered data field in accordance with the field alteration data. The alteration may generate a field alteration datum and a component of the query may consist of reading the field alteration data.

20090006309, Jan 1, 2009

Jan 31, 2008

12/023267

Herbert Dennis Hunt - San Francisco CA, US
John Randall West - Sunnyvale CA, US
Marshall Ashby Gibbs - Clarendon Hills IL, US
Bradley Michael Griglione - Lake Zurich IL, US
Gregory David Neil Hudson - Riverside IL, US
Andrea Basilico - Lomazzo, IT
Arvid C. Johnson - Frankfort IL, US
Cheryl G. Bergeon - Arlington Heights IL, US
Craig Joseph Chapa - Lake Barrington IL, US
Alberto Agostinelli - Trezzo sull'Adda, IT
Jay Alan Yusko - Lombard IL, US
Trevor Mason - Bolingbrook IL, US
Ting Liu - Downers Grove IL, US

G06F 17/30

707 1, 707E17009

Systems and methods are presented that may involve receiving a aggregated dataset, wherein the aggregated dataset includes data from a panel data source, a fact data source, and a dimension data source that have been associated with a standard population database. The process may also involve storing the aggregated data in a partition within a partitioned database, wherein the partition is associated with a data characteristic. The process may also involve associating a master processing node with a plurality of slave nodes, wherein each of the plurality of slave nodes is associated with a partition of the partitioned database. The process may also involve submitting an analytic query to the master processing node. The process may also involve assigning analytic processing to at least one of the plurality of slave nodes by the master processing node, wherein the assignment is based at least in part on the association of the partition with the data characteristic. The process may also involve reading the aggregated data from the partitioned database by the assigned slave node. The process may also involve analyzing the aggregated data by the assigned slave node, wherein the analysis produces a result at each slave node. The process may also involve combining the results from each of the plurality of slave nodes by the master processing node into a master result and reporting the master result to a user interface.

20110137924, Jun 9, 2011

Feb 15, 2011

13/028022

Herbert Dennis Hunt - San Francisco CA, US
John Randall West - Sunnyvale CA, US
Marshall Ashby Gibbs - Clarendon Hills IL, US
Bradley Michael Griglione - Lake Zurich IL, US
Gregory David Neil Hudson - Riverside IL, US
Andrea Basilico - Lomazzo, IT
Arvid C. Johnson - Frankfort IL, US
Cheryl G. Bergeon - Arlington Heights IL, US
Craig Joseph Chapa - Lake Barrington IL, US
Alberto Agostinelli - Trezzo sull'Adda, IT
Jay Alan Yusko - Lombard IL, US
Trevor Mason - Boilingbrook IL, US
Ting Liu - Downers Grove IL, US

G06F 17/30

707757, 707E17014

Using a computer, a database comprising a field is identified. A query relating to the field is identified. Prior to processing the query, the field is dynamically altered to conform to a desired bit size. The query is processed. The results of the query are returned.

20110232730, Sep 29, 2011

Mar 29, 2010

12/749076

Rebecca Elizabeth Jones - Mountain View CA, US
Homan Bernard Yuen - Sunnyvale CA, US
Ting Liu - Santa Clara CA, US
Pranob Misra - Milpitas CA, US

Solar Junction Corp. - San Jose CA

H01L 31/0304
C22C 30/00
H01L 31/18

136255, 420580, 438 94, 257E31022

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

20120103403, May 3, 2012

Oct 28, 2010

12/914710

Pranob Misra - Stanford CA, US
Rebecca Elizabeth Jones - Mountain View CA, US
Ting Liu - San Jose CA, US
Ilya Fushman - Palo Alto CA, US
Homan Bernard Yuen - Sunnyvale CA, US

Solar Junction Corporation - San Jose CA

H01L 31/0288
H01L 31/18

136255, 438 57, 438478, 257E31014

A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell. In further embodiments, a multi junction solar cell according to the invention may comprise four, five or more sub-cells in which the one or more sub-cells may each comprise exponentially doped dilute nitride alloys.

20130118546, May 16, 2013

Dec 7, 2012

13/708791

Solar Juction Corporation - San Jose CA, US
Pranob Misra - Santa Clara CA, US
Michael J. Sheldon - Cortaro AZ, US
Homan B. Yuen - Santa Clara CA, US
Ting Liu - San Jose CA, US
Daniel Derkacs - Sunnyvale CA, US
Vijit Sabnis - Cupertino CA, US
Michael West Wiemer - Campbell CA, US
Ferran Suarez - San Jose CA, US

Solar Junction Corporation - San Jose CA

H01L 31/06

136244, 136255

Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.