Inventors:
Ronald John Kuse - Dublin CA, US
Imran Hashim - Saratoga CA, US
Tony Chiang - Campbell CA, US
Assignee:
Intermolecular, Inc. - San Jose CA
International Classification:
H01L 21/332
H01L 45/00
US Classification:
438133, 438104, 438381, 365 51, 365148, 365189011, 257 2, 257 4, 257512, 257E21001, 257E21006, 257E45003, 257E47001
Abstract:
Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.