Huanlong Liu

20140015074, Jan 16, 2014

Jul 3, 2013

13/935274

Huanlong LIU - New York NY, US
Andrew David KENT - New York NY, US

H01L 43/02

257421

Orthogonal spin-torque bit cells whose spin torques from a perpendicular polarizer and an in-plane magnetized reference layer are constructively or destructively combined. An orthogonal spin-torque bit cell includes a perpendicular magnetized polarizing layer configured to provide a first spin-torque; an in-plane magnetized free layer and a reference layer configured to provide a second spin-torque. The first spin-torque and the second spin-torque combine and the combined first spin-torque and second spin-torque influences the magnetic state of the in-plane magnetized free layer. The in-plane magnetized free layer and the reference layer form a magnetic tunnel junction. The first spin-torque and second spin-torque can combine constructively to lower a switching current, increase a switching speed, and/or torque decrease an operating energy of the orthogonal spin-torque bit cell.

20120294078, Nov 22, 2012

Nov 16, 2011

13/298190

Andrew Kent - New York NY, US
Daniel Bedau - New York NY, US
Huanlong Liu - New York NY, US

G11C 11/14

365171

Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultra-fast energy efficient switching. OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer, exhibit improved performance over prior art devices. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy less than 450 fJ and may be reliably observed at room temperature with 0.7 V amplitude pulses of 500 ps duration.

20220384716, Dec 1, 2022

Jul 26, 2022

17/873428

- Hsin-Chu, TW
Guenole Jan - San Jose CA, US
Ru-Ying Tong - Los Gatos CA, US
Vignesh Sundar - Sunnyvale CA, US
Jian Zhu - San Jose CA, US
Huanlong Liu - Sunnyvale CA, US

H01L 43/08
H01F 10/32
H01F 41/30

A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a capping layer that is a conductive metal nitride such as MoN contacts an opposite surface of the Hk enhancing layer with respect to the first interface to reduce interdiffusion of oxygen and nitrogen compared with a TiN capping layer and maintain an acceptable resistance x area (RA) product. In other embodiments, the capping layer may comprise an insulating nitride such as AlN that is alloyed with a conductive metal to minimize RA. Furthermore, a metallic buffer layer may be inserted between the capping layer and Hk enhancing layer. As a result, electrical shorts are reduced and the magnetoresistive ratio is increased.

20220246841, Aug 4, 2022

Apr 25, 2022

17/728058

- Hsin-Chu, TW
Jodi Mari Iwata - San Carlos CA, US
Ru-Ying Tong - Los Gatos CA, US
Huanlong Liu - Sunnyvale CA, US
Yuan-Jen Lee - Fremont CA, US
Jian Zhu - San Jose CA, US

H01L 43/08
H01L 43/12
H01L 43/10

A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichiometric oxidation state to minimize parasitic resistance, and comprises a dopant to fill vacant lattice sites thereby blocking oxygen diffusion through the Mox layer to preserve interfacial PMA and high thermal stability at process temperatures up to 400 C. Various methods of forming the doped Mox layer include deposition of the M layer in a reactive environment of 0and dopant species in gas form, exposing a metal oxide layer to dopant species in gas form, and ion implanting the dopant. In another embodiment, where the dopant is N, a metal nitride layer is formed on a metal oxide layer, and then an anneal step drives nitrogen into vacant sites in the metal oxide lattice.

20210325460, Oct 21, 2021

Jul 1, 2021

17/365822

- Hsinchu, TW
Huanlong Liu - Sunnyvale CA, US
Jian Zhu - San Jose CA, US
Yuan-Jen Lee - Fremont CA, US
Po-Kang Wang - Los Altos CA, US

G01R 31/319
G01R 31/28
G01R 31/3167
G01R 31/3185
G06F 11/263
G11C 11/16
G11C 29/12
G11C 29/14
G11C 29/38
H03M 1/12

A method includes receiving tester configuration data, test pattern data, and tester operation data; configuring a circuit for performing a designated test evaluation; generating a stimulus waveform; converting the stimulus waveform to an analog stimulus signal; transferring the analog stimulus signal to a first terminal of a MTJ DUT at reception of a trigger timing signal; generating time traces based on the trigger timing signal; generating a response signal at a second terminal of the MTJ DUT and across a termination resistor as the analog stimulus signal is transferred through the MTJ DUT; converting the response signal to a digitized response signal indicating its voltage amplitude; and performing the designated test evaluation and analysis function in the configurable circuit based on voltage amplitudes and time values of the stimulus waveform, the digitized response signal, and the timing traces.

20210210680, Jul 8, 2021

Mar 22, 2021

17/208303

- Hsinchu, TW
Jodi Mari Iwata - San Carlos CA, US
Ru-Ying Tong - Los Gatos CA, US
Huanlong Liu - Sunnyvale CA, US
Yuan-Jen Lee - Fremont CA, US
Jian Zhu - San Jose CA, US

H01L 43/12
H01L 43/10
H01L 27/22
H01L 43/02

A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a boron containing free layer (FL) is subjected to a plasma treatment with inert gas, and a natural oxidation (NOX) process to form BObefore overlying layers are deposited. A metal layer such as Mg is deposited on the FL as a first step in forming a Hk enhancing layer that increases FL perpendicular magnetic anisotropy, or as a first step in forming a tunnel barrier layer on the FL. One or more anneal steps are essential in assisting BOsegregation from the free layer and thereby increasing the FL magnetic moment. A post-oxidation plasma treatment may also be used to partially remove BOproximate to the FL top surface before the metal layer is deposited. Both plasma treatments use low power (

20210020831, Jan 21, 2021

Oct 5, 2020

17/063425

- Hsinchu, TW
Guenole Jan - San Jose CA, US
Ru-Ying Tong - Los Gatos CA, US
Vignesh Sundar - Sunnyvale CA, US
Dongna Shen - San Jose CA, US
Yu-Jen Wang - San Jose CA, US
Po-Kang Wang - Los Altos CA, US
Huanlong Liu - Sunnyvale CA, US

H01L 43/08
H01L 27/22
H01L 43/10
H01L 43/12

A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H, or a reducing species.

20200279993, Sep 3, 2020

May 18, 2020

16/877066

- Hsin-Chu, TW
Guenole Jan - San Jose CA, US
Ru-Ying Tong - Los Gatos CA, US
Vignesh Sundar - Sunnyvale CA, US
Jian Zhu - San Jose CA, US
Huanlong Liu - Sunnyvale CA, US

H01L 43/08
H01F 10/32
H01F 41/30

A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a capping layer that is a conductive metal nitride such as MoN contacts an opposite surface of the Hk enhancing layer with respect to the first interface to reduce interdiffusion of oxygen and nitrogen compared with a TiN capping layer and maintain an acceptable resistance x area (RA) product. In other embodiments, the capping layer may comprise an insulating nitride such as AlN that is alloyed with a conductive metal to minimize RA. Furthermore, a metallic buffer layer may be inserted between the capping layer and Hk enhancing layer. As a result, electrical shorts are reduced and the magnetoresistive ratio is increased.