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Edward E Herderick

from Pickerington, OH
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Also known as:
Ed Herderick, E E Herderick
Phone and address:
377 Seven Pines Dr, Pickerington, OH 43147
(614) 837-6499
Connected to:
Stephanie K Herderich, 34Teresa J Herderick, 67Tiffany S Herderhorst, 46Kevin W Herdes, 46Amanda R Herdina, 40Susan D Herdina, 68David K Herdle, 57Sean P Herdlein, 51Garry P Herdler, 55Jeremiah J Herdliska, 49

Edward Herderick Phones & Addresses

  • 377 Seven Pines Dr, Pickerington, OH 43147 (614) 837-6499
  • 364 Lane Ave, Columbus, OH 43201 (614) 861-5285
  • Atlanta, GA

Work

Company: The center for real estate education & research Jun 1974 to Oct 2005 Position: Senior systems developer

Education

School / High School: The Ohio State University 1974 to 1978

Interests

Biomedical Imaging • Space Program

Industries

Computer Software

Resumes

Resumes

Edward Herderick Photo 1

Chief Executive Officer

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Location:
31 Hill Rd south, Pickerington, OH 43147
Industry:
Computer Software
Work:
The Center For Real Estate Education & Research Jun 1974 - Oct 2005
Senior Systems Developer
Eehscience Jun 1974 - Oct 2005
Chief Executive Officer
Education:
The Ohio State University 1974 - 1978
Interests:
Biomedical Imaging
Space Program

Business Records

Name / Title
Company / Classification
Phones & Addresses
Edward E Herderick
EEHSCIENCE, LLC
Edward E Herderick
SOUTHWAY POST CITY CLUB, INC
Columbus, OH

Publications

Us Patents

System For Fabricating Silicon Carbide Assemblies

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US Patent:
20130075039, Mar 28, 2013
Filed:
Sep 21, 2012
Appl. No.:
13/624423
Inventors:
Edward D. HERDERICK - Powell OH, US
Kirk E. COOPER - Worthington OH, US
Nathan D. AMES - Sunbury OH, US
Assignee:
EDISON WELDING INSTITUTE, INC. - Columbus OH
International Classification:
B32B 37/00
B23K 37/00
B23K 26/20
B32B 37/06
US Classification:
1563796, 156349, 228 41, 21912163
Abstract:
A system for fabricating silicon carbide assemblies that includes at least two silicon carbide materials; at least one joining interlayer positioned between the at least two silicon carbide materials, wherein the at least one joining interlayer further includes a first material that melts at a first temperature and a second material interspersed throughout the first material, and wherein the second material melts at a temperature that is lower than that of the first material; and at least one apparatus for applying energy to the joining interlayer, wherein applying energy to the joining interlayer is operative to soften the first material and melt the second material, and wherein softening the first material and melting the second material is operative to transform the joining interlayer into a substantially porosity-free adherent material capable of joining together the at least two silicon carbide materials.

Method For Joining Silicon Carbide Components To One Another

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US Patent:
20180308589, Oct 25, 2018
Filed:
Jun 27, 2018
Appl. No.:
16/019893
Inventors:
- Columbus OH, US
Edward D. HERDERICK - Powell OH, US
Kirk E. COOPER - Worthington OH, US
Nathan D. AMES - Sunbury OH, US
International Classification:
G21C 3/07
B32B 37/06
B23K 26/20
B23K 37/00
B23K 1/008
C04B 35/565
C22C 21/02
C04B 37/02
C04B 37/00
B23K 1/005
B32B 37/00
Abstract:
A method for fabricating assemblies that includes providing a first component that further includes silicon carbide and that has an upper portion and a tapered lower portion; providing a second component that further includes silicon carbide and that has an upper portion that is adapted to receive the tapered lower portion of the first component; providing a predetermined amount of multiphase Al—Si braze foil; grinding the Al—Si braze foil into a powder; mixing a predetermined amount of braze paste binder with the Al—Si powder to form a slurry; uniformly applying the slurry to the tapered lower portion of the first component; uniformly applying the slurry to the upper portion of the second component and inserting the tapered lower portion of the first component into the upper portion of the second component; and heating the applied slurry to a temperature of 725 C. to 1450 C. for a predetermined period of time.

Systems And Methods For Detection, Analysis, Isolation And/Or Harvesting Of Biological Objects

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US Patent:
20170227564, Aug 10, 2017
Filed:
May 8, 2015
Appl. No.:
15/309712
Inventors:
- Cleveland OH, US
Edward J. Kwee - Cleveland OH, US
Kimerly A. Powell - Lake Forest Park WA, US
Edward E. Herderick - Pickerington OH, US
Cynthia A. Boehm - North Olmsted OH, US
Thomas R. Adams - Cheswick PA, US
Robert Germanoski - Jeannette PA, US
Frank Krakosh, III - Latrobe PA, US
James Dunn - Pittsburgh PA, US
Daniel Bantz - Brookline NH, US
International Classification:
G01N 35/10
G01B 11/14
G01B 11/06
B01L 3/02
C12M 1/36
Abstract:
Systems and methods provide for detection and controlled interaction with one or more objects. The system can include an imaging subsystem (), a tool subsystem () containing one or more tools, a stage subsystem () and a control system (). The control system () can integrate controls for each of the other subsystems, which controls can be implement desired functions over a variety of process parameters to perform the controlled interaction.

Method For Fabricating Silicon Carbide Assemblies

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US Patent:
20160284427, Sep 29, 2016
Filed:
Jun 8, 2016
Appl. No.:
15/176942
Inventors:
Edward D. HERDERICK - Powell OH, US
Kirk E. COOPER - Worthington OH, US
Nathan D. AMES - Sunbury OH, US
Assignee:
EDISON WELDING INSTITUTE, INC. - COLUMBUS OH
International Classification:
G21C 3/07
C04B 35/565
B23K 1/008
C04B 37/00
C22C 21/02
B23K 1/005
Abstract:
A method for fabricating assemblies includes providing first and second components that include ceramic, metal, or composite; positioning a multiphase joining interlayer between the first and second components, wherein the joining interlayer includes a first phase that melts at a first temperature and a second phase interspersed throughout the first phase, and wherein the second phase melts at a second temperature that is lower than the melting temperature of the first phase; and heating the joining interlayer to a temperature in the range of 725 C. to 1450 C. for a predetermined period of time to soften the first phase and melt the second phase, wherein the first phase remains in a solid or a semi-solid state, and wherein the second phase segregates to the boundaries of the first phase and transforms the joining interlayer into a substantially porosity-free adherent material that joins the first component to the second component.
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Edward E Herderick from Pickerington, OH Get Report