Inventors:
Brahmanandam Tanikella - Northboro MA, US
Elizabeth Thomas - Southington OH, US
Frank L. Csillag - Hopkinton MA, US
Palaniappan Chinnakaruppan - Springboro OH, US
Jadwiga Jaroniec - Stow OH, US
Eric Virey - Portland OR, US
Robert A. Rizzuto - Worcester MA, US
Assignee:
Saint-Gobain Ceramics & Plastics, Inc. - Worcester MA
International Classification:
H01L 27/01
H01L 27/12
H01L 31/0392
H01L 23/58
US Classification:
257352, 257629, 257631, 257E21121, 438974
Abstract:
Wafer suitable for semiconductor deposition application can be fabricated to have low bow, warp, total thickness variation, taper, and total indicated reading properties. The wafers can be fabricated by cutting a boule to produce rough-cut wafers, lapping the rough-cut wafers, etching the lapped wafers to remove a defect, deformation zone and relieve residual stress, and chemically mechanically polishing the etched wafers to desired finish properties. Etching can be performed by immersion in a heated etching solution comprising sulfuric acid or a mixture of sulfuric and phosphoric acids. A low pH slurry utilized in chemical mechanical polishing of the spinel wafer can comprise α-AlOand an organic phosphate.