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Adam M Fennimore

from New York, NY
Age ~50
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Also known as:
Adam Michael Fennimore, Adam M Finnemore
Related to:
Kamla J Fennimore, 45Chris Fennimore, 47Gloris C FitzpatrickRachel A Smith, 42Jessica C Smith, 38Ronald M Smith, 74Deborah J Smith, 70Colleen J Smith, 73Jordan B Smith, 42Joel J Smith, 47Jocelyn S Wikle, 45Barbara M SmithOliver R SmithSharon L Fitzpatrick, 77Erin L Moch, 43Tony Fennimore, 79
Connected to:
Joseph P Fennimore, 44Robert S Fennimore, 58David W Fenning, 71Erin M Fenning, 39Sheralee B Fennis, 60Christopher P Fenno, 44Christy D Fenno, 43Dencie A Fenno, 81Lief E Fenno, 40Carolyn J Fennoy, 77

Adam Fennimore Phones & Addresses

  • New York, NY
  • 704 Abbey Rd, Wilmington, DE 19808 (302) 998-7843
  • 41 Hill Rd, Berkeley, CA 94708
  • El Cerrito, CA
  • Provo, UT

Work

Position: Craftsman/Blue Collar

Education

Degree: Graduate or professional degree

Industries

Nanotechnology

Resumes

Resumes

Adam Fennimore Photo 1

Adam Fennimore

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Location:
Greater Philadelphia Area
Industry:
Nanotechnology

Publications

Us Patents

Rotational Actuator Of Motor Based On Carbon Nanotubes

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US Patent:
7453183, Nov 18, 2008
Filed:
May 17, 2006
Appl. No.:
11/383904
Inventors:
Alexander K. Zettl - Kensington CA, US
Adam M. Fennimore - Berkeley CA, US
Thomas D. Yuzvinsky - Berkeley CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H02N 1/00
US Classification:
310309, 977725
Abstract:
A rotational actuator/motor based on rotation of a carbon nanotube is disclosed. The carbon nanotube is provided with a rotor plate attached to an outer wall, which moves relative to an inner wall of the nanotube. After deposit of a nanotube on a silicon chip substrate, the entire structure may be fabricated by lithography using selected techniques adapted from silicon manufacturing technology. The structures to be fabricated may comprise a multiwall carbon nanotube (MWNT), two in plane stators S, S and a gate stator S buried beneath the substrate surface. The MWNT is suspended between two anchor pads and comprises a rotator attached to an outer wall and arranged to move in response to electromagnetic inputs. The substrate is etched away to allow the rotor to freely rotate. Rotation may be either in a reciprocal or fully rotatable manner.

Precision Shape Modification Of Nanodevices With A Low-Energy Electron Beam

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US Patent:
7674389, Mar 9, 2010
Filed:
Oct 26, 2005
Appl. No.:
11/260021
Inventors:
Alex Zettl - Kensington CA, US
Thomas David Yuzvinsky - Berkeley CA, US
Adam Fennimore - Berkeley CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 21/302
B23K 15/00
B82B 3/00
US Classification:
216 2, 216 58, 216 63, 216 74, 216 81, 2191212, 438689, 977856, 977888, 977900
Abstract:
Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

Electroactive Materials

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US Patent:
8063399, Nov 22, 2011
Filed:
Nov 17, 2008
Appl. No.:
12/272210
Inventors:
Gary A. Johansson - Hockessin DE, US
Eric Maurice Smith - Hockessin DE, US
Reid John Chesterfield - Santa Barbara CA, US
Kyung-Ho Park - Wilmington DE, US
Nora Sabina Radu - Landenberg PA, US
Gene M. Rossi - Wilmington DE, US
Frederick P. Gentry - Bear DE, US
Troy C. Gehret - Wilmington DE, US
Daniel David Lecloux - West Chester PA, US
Adam Fennimore - Wilmington DE, US
Assignee:
E. I. du Pont de Nemours and Company - Wilmington DE
International Classification:
H01L 51/00
US Classification:
257 40, 257103, 257E51026, 257E51028, 549 59, 428690
Abstract:
A compound having Formula I, Formula II, or Formula III:.

Field Emission Device With Protecting Vapor

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US Patent:
8076834, Dec 13, 2011
Filed:
Aug 20, 2008
Appl. No.:
12/673586
Inventors:
Adam Fennimore - Wilmington DE, US
David Herbert Roach - Hockessin DE, US
Assignee:
E.I. du Pont de Nemours and Company - Wilmington DE
International Classification:
H01J 29/94
H01J 9/395
US Classification:
313495, 313309, 313336, 313351, 445 23, 445 38
Abstract:
A field emission device in which a protecting vapor is present in an evacuated space between a field emission cathode assembly and an anode. The protecting vapor may be one or more hydrogen-containing gases such as a gas containing M—H bonds where M may be C, Si, B, Al or P.

Anthracene Compounds For Luminescent Applications

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US Patent:
8263973, Sep 11, 2012
Filed:
Dec 18, 2009
Appl. No.:
12/642116
Inventors:
Norman Herron - Newark DE, US
Weiying Gao - Landenberg PA, US
Adam Fennimore - Wilmington DE, US
Mark A. Guidry - Wilmington DE, US
Assignee:
E I du Pont de Nemours and Company - Wilmington DE
International Classification:
H01L 35/24
US Classification:
257 40, 257E51001, 552245, 552251, 552290
Abstract:
This invention relates to anthracene derivatives that are useful in electroluminescent applications. It also relates to electronic devices in which the active layer includes such an anthracene derivative.

Cathode Assembly Containing An Ultraviolet Light-Blocking Dielectric Layer

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US Patent:
8269210, Sep 18, 2012
Filed:
Nov 26, 2008
Appl. No.:
12/744509
Inventors:
Lap-Tak Andrew Cheng - Newark DE, US
Adam Fennimore - Wilmington DE, US
Assignee:
E I du Pont de Nemours and Company - Wilmington DE
International Classification:
H01L 29/06
US Classification:
257 10, 257E29166, 257E21211, 438 20
Abstract:
A field emission cathode assembly that has a UV-blocking, insulating dielectric layer ().

Electrically Conductive Polymer Compositions

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US Patent:
8282861, Oct 9, 2012
Filed:
Dec 21, 2009
Appl. No.:
12/643556
Inventors:
Ralph Birchard Lloyd - Fayetteville NC, US
Adam Fennimore - Wilmington DE, US
International Classification:
H01B 1/00
H01L 29/08
C08G 75/00
C08G 73/00
C08G 73/06
US Classification:
252500, 257 40, 528377, 528422, 528423
Abstract:
The present invention relates to electrically conductive compositions, and their use in electronic devices. The composition includes either (1) a deuterated electrically conductive polymer doped with a highly-fluorinated acid polymer; or (2) (a) a deuterated electrically conductive polymer doped with a non-fluorinated polymeric acid and (b) at least one highly-fluorinated acid polymer.

Deuterated Zirconium Compound For Electronic Applications

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US Patent:
8465849, Jun 18, 2013
Filed:
Dec 21, 2009
Appl. No.:
12/643576
Inventors:
Adam Fennimore - Wilmington DE, US
Weiying Gao - Landenberg PA, US
Assignee:
E I du Pont de Nemours and Company - Wilmington DE
International Classification:
H01L 51/54
US Classification:
428690, 428917, 257 40, 257E5105, 313504, 313505, 313506, 546 7, 546 18
Abstract:
This invention relates to deuterated electron transfer compounds useful in electronic applications. It also relates to electronic devices in which the electron transfer layer includes zirconium compounds with at least one of the aryl compounds containing some deuteration.

Wikipedia

FileZettl Schematic.png

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Adam Fennimore, Tom Yuzvinsky, Wei-Qiang Han, M. S. Fuhrer, J. Cumings and Alex Zettl. Permission (Reusing this file). See below. ...
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Adam M Fennimore from New York, NY, age ~50 Get Report