Search

Zhen Y Chen

from San Francisco, CA
Get Report
Related to:
Xian Chen, 62Hui H MaiShufang Chen, 71Wu N Chen, 86Xiu M ChenKam Chan, 96Huaxin Chen, 91Chi Chen Pin, 53Ching Pi Chang, 61Lana L ChanRuo Y Chen, 91Yueyan Chen, 85Yan Y Chan, 77Xing Z Chen, 90Annette Chang, 27Chinghui Chen, 58
Connected to:
Aiyu Chen, 34Allen C Chen, 73Aluna F Chen, 58Anna D Chen, 67Annamaria E Chen, 38Annice B Chen, 31Anthony Chen, 60Ava H Chen, 43Baofeng Chen, 40Barbara K Chen, 46

Zhen Chen Phones & Addresses

  • San Francisco, CA

Professional Records

Lawyers & Attorneys

Zhen Chen Photo 1

Zhen Chen - Lawyer

View page
Address:
Fangda Partners
(105) 769-5634 (Office)
Licenses:
New York - Currently registered 2008
Education:
Northwestern University School of Law

Business Records

Name / Title
Company / Classification
Phones & Addresses
Zhen Chen
Principal
Summer Construction Co
Single-Family House Construction
726 Athens St, San Francisco, CA 94112
Zhen Chen
Haotian Ventures LLC
2225 E Bayshore Rd, Palo Alto, CA 94303
22385 Ainsworth Dr, Los Altos, CA 94024
Zhen An Chen
ANEW FOOD, INC
Zhen Chen
CNQ, INC

Publications

Wikipedia

Chen Zhen (fictial character) the free ...

View page

Chen Zhen is a fictional Chinese martial artist and hero created by Hong Kong writer Ni Kuang. He made his debut appearance in the 1972 film Fist of Fury, which ...

Chen Zhen

View page

Chen Zhen may refer to: Chen Zhen (Han Dynasty), Han Dynasty minister serving under Liu Bei Chen Zhen (fictional character), fictional Chinese martial artist who was ...

Us Patents

Optoelectronic Device Based On Non-Polar And Semi-Polar Aluminum Indium Nitride And Aluminum Indium Gallium Nitride Alloys

View page
US Patent:
20130126828, May 23, 2013
Filed:
Dec 18, 2012
Appl. No.:
13/718152
Inventors:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA, US
Zhen Chen - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 33/30
US Classification:
257 13
Abstract:
A high-power and high-efficiency light emitting device with emission wavelength (λ) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Apparatuses And Methods Involving Thermally Tuned Composite Material

View page
US Patent:
20210024143, Jan 28, 2021
Filed:
Mar 29, 2019
Appl. No.:
17/043102
Inventors:
- Stanford CA, US
Yu Shi - Redwood City CA, US
Shanhui Fan - Stanford CA, US
Zhen Chen - Redwood City CA, US
International Classification:
B62D 29/00
F28F 13/18
F24F 5/00
G02F 1/01
B05D 5/06
Abstract:
An apparatus includes a substrate, at least one type of tuning material, and a composite material. The substrate has an interface surface or material that manifests, in response to light in a color spectrum, a particular color and a first thermal load. The particular color is associated with the first thermal load. The at least one type of tuning material manifests, in response to light in the color spectrum, the particular color and a second thermal load. The particular color is associated with the second thermal load. The first thermal load is different from the second thermal load. The composite material includes the interface surface or material and the at least one type of tuning material. The composite material manifests, in response to light in the color spectrum, the particular color and a tuned thermal load which is different than the first thermal load and the second thermal load.

Subpixel Light Emitting Diodes For Direct View Display And Methods Of Making The Same

View page
US Patent:
20190326478, Oct 24, 2019
Filed:
Apr 19, 2019
Appl. No.:
16/389510
Inventors:
- Lund, SE
Max BATRES - Fremont CA, US
Michael J. CICH - Fremont CA, US
Zhen CHEN - Dublin CA, US
International Classification:
H01L 33/40
H01L 25/075
H01L 33/00
H01L 33/02
H01L 33/06
H01L 33/12
H01L 33/24
H01L 33/32
H01L 33/44
H01L 33/62
Abstract:
A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.
Control profile
Zhen Y Chen from San Francisco, CA Get Report