Zhitao Diao

7187577, Mar 6, 2007

Nov 23, 2005

11/286083

Lien-Chang Wang - Fremont CA, US
Zhitao Diao - Fremont CA, US
Yunfei Ding - St. Paul MN, US

Grandis, Inc. - Milpitas CA

G11C 11/00

365158, 365148

A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

7242045, Jul 10, 2007

Feb 19, 2004

10/783416

Paul P. Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US
Zhitao Diao - Fremont CA, US
Frank Albert - Redwood City CA, US

Grandis, Inc. - Milpitas CA

H01L 29/76

257295, 257204

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

7289356, Oct 30, 2007

Jun 8, 2005

11/147944

Zhitao Diao - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Mahendra Pakala - Fremont CA, US
Zhenghong Qian - Fremont CA, US

Grandis, Inc. - Milpitas CA

G11C 7/00

365158, 365173

A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

7369427, May 6, 2008

Sep 9, 2004

10/938219

Zhitao Diao - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Thierry Valet - Sunnyvale CA, US
Paul P. Nguyen - San Jose CA, US
Mahendra Pakala - San Jose CA, US

Grandis, Inc. - Milpitas CA

G11C 11/00
G11C 11/14
G11C 11/15

365158, 365171, 365173

A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

7430135, Sep 30, 2008

Dec 23, 2005

11/318337

Yiming Huai - Pleasanton CA, US
Zhitao Diao - Fremont CA, US
Alex Panchula - San Carlos CA, US
Eugene Youjun Chen - Fremont CA, US
Lien-Chang Wang - Fremont CA, US

Grandis Inc. - Milpitas CA

G11C 11/00

365158, 365171, 365173, 365 55

Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.

7495303, Feb 24, 2009

Jan 29, 2007

11/699160

Zhitao Diao - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Thierry Valet - Sunnyvale CA, US
Paul P. Nguyen - San Jose CA, US
Mahendra Pakala - San Jose CA, US

Grandis, Inc. - Milpitas CA

G11C 11/00
G11C 11/14
G11C 11/15
H01L 27/22

257421, 257427, 365158, 365171, 365173

A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

7663848, Feb 16, 2010

Sep 20, 2006

11/523872

Yiming Huai - Pleasanton CA, US
Zhitao Diao - Fremont CA, US
Eugene Youjun Chen - Fremont CA, US

Grandis, Inc. - Milpitas CA
Renesas Technology Corp - Tokyo

G11B 5/127

3603242

A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer. The magnetic element is configured to allow the free layer to be switched utilizing spin transfer when a write current is passed through the magnetic element.

7738287, Jun 15, 2010

Mar 27, 2007

11/692090

Zhitao Diao - Fremont CA, US
Lien-Chang Wang - Fremont CA, US
Yiming Huai - Pleasanton CA, US

Grandis, Inc. - Milpitas CA

G11C 11/00

365158, 365173

A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.