Search

Zhenghong Qian

from Eden Prairie, MN
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Also known as:
Qian Ge Zhenghong, Zheng H Qian
Phone and address:
17775 Evener Way, Edina, MN 55346
(952) 934-3581
Connected to:
Amy Qian, 36Ashley Qian, 31Cai Y Qian, 33Chong G Qian, 88Chunhui Qian, 46Di Qian, 36Emily L Qian, 31Feifei Qian, 38Haimeng Qian, 60Holly H Qian, 59

Zhenghong Qian Phones & Addresses

  • 17775 Evener Way, Eden Prairie, MN 55346 (952) 934-3581
  • Shrewsbury, MA
  • Westborough, MA
  • Fremont, CA
  • Saint Paul, MN
  • 53 Hillside Dr, Shrewsbury, MA 01545

Work

Company: Spinic Feb 2009 to Mar 2016 Position: Chief technology advisor

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of Minnesota 1995 to 1999 Specialities: Materials Science, Engineering, Philosophy

Skills

Thin Films • Nanotechnology • Characterization • Mems • Materials Science • Failure Analysis • Semiconductors • Sensors • Product Development • Scanning Electron Microscopy • R&D • Semiconductor Industry • Ic • Electronics • Pvd • Process Integration

Industries

Semiconductors

Resumes

Resumes

Zhenghong Qian Photo 1

Professor And Director

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Location:
Eden Prairie, MN
Industry:
Semiconductors
Work:
Spinic Feb 2009 - Mar 2016
Chief Technology Advisor
Hangzhou Dianzi University Feb 2009 - Mar 2016
Professor and Director
Advanced Microsensors Nov 2005 - Feb 2009
Principal Engineer and Develpment Project Manager
Grandis, Inc. Aug 2004 - Aug 2005
Director of Product Development
Nve Corporation 1999 - 2004
Principal Investigator and Program Manager
Education:
University of Minnesota 1995 - 1999
Doctorates, Doctor of Philosophy, Materials Science, Engineering, Philosophy University of Minnesota 1996 - 1998
Masters, Electrical Engineering, Electronics Engineering
Skills:
Thin Films
Nanotechnology
Characterization
Mems
Materials Science
Failure Analysis
Semiconductors
Sensors
Product Development
Scanning Electron Microscopy
R&D
Semiconductor Industry
Ic
Electronics
Pvd
Process Integration

Publications

Us Patents

Magnetic Field Sensor With Augmented Magnetoresistive Sensing Layer

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US Patent:
6872467, Mar 29, 2005
Filed:
Nov 10, 2003
Appl. No.:
10/704870
Inventors:
Zhenghong Qian - Eden Prairie MN, US
James M. Daughton - Eden Prairie MN, US
Dexin Wang - Eden Prairie MN, US
Mark C. Tondra - Minneapolis MN, US
Assignee:
NVE Corporation - Eden Prairie MN
International Classification:
G11B005/39
US Classification:
428611, 428637, 428660, 428686, 428213, 428692, 36032412, 3603242
Abstract:
A ferromagnetic thin-film based magnetic field sensor having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof upon one of which a magnetization reference layer is provided and upon the other there being provided a sensing layer. A spacer layer is provided on the sensing film to separate this sensing film from an augmenting film with the spacer layer being sufficiently thick so as to significantly reduce or eliminate topological coupling between the sensing and augmenting films, and to significantly randomize spin states of emerging electrons traversing therethrough.

Two-Axis Magnetic Field Sensor

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US Patent:
7054114, May 30, 2006
Filed:
Nov 17, 2003
Appl. No.:
10/715144
Inventors:
Albrecht Jander - Corvallis OR, US
Catherine A. Nordman - St. Paul MN, US
Zhenghong Qian - Eden Prairie MN, US
Carl H. Smith - Chatham NJ, US
Assignee:
NVE Corporation - Eden Prairie MN
International Classification:
G11B 5/127
US Classification:
3603241
Abstract:
A ferromagnetic thin-film based magnetic field sensor with first and second sensitive direction sensing structures each having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof having a magnetization reference layer on one and an anisotropic ferromagnetic material sensing layer on the other having a length in a selected length direction and a smaller width perpendicular thereto and parallel to the relatively fixed magnetization direction. The relatively fixed magnetization direction of said magnetization reference layer in each is oriented in substantially parallel to the substrate but substantially perpendicular to that of the other. An annealing process is used to form the desired magnetization directions.

Giant Magnetoresistive Resistor And Sensor Apparatus And Method

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US Patent:
7639005, Dec 29, 2009
Filed:
Jun 15, 2007
Appl. No.:
11/763560
Inventors:
Zhenghong Qian - Westborough MA, US
Gunther Baubock - Southborough MA, US
Barry T. O'Connell - Worcester MA, US
Assignee:
Advanced Microsensors, Inc. - Shrewsbury MA
International Classification:
G01R 33/09
G01R 33/02
US Classification:
324252, 32420721
Abstract:
A giant magnetoresistive sensor apparatus is described that provides improved multilayer quality, hysteresis, linearity and sensitivity. The multilayer structure includes NiFeCr as buffer and cap layers. The sensing resistor is designed in the form of a serpentine structure. To minimize the hysteresis and improve the linearity, the resistor end is tapered and elongated. In forming the sensor in a Wheatstone bridge configuration, two resistors are shielded by thick NiFe layers, while the two sensing resistors are not shielded and open to external signal fields. The shields can not only shield the influence of the external field on the shielded resistors but also serve as magnetic flux concentrators to magnify the external field on the unshielded resistors. The bridge output reflects the resistance change of the two unshielded sensing resistors.

Magnetic Devices Using Nanocomposite Materials

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US Patent:
20020146580, Oct 10, 2002
Filed:
Jan 7, 2002
Appl. No.:
10/041910
Inventors:
Dexin Wang - Eden Prairie MN, US
Zhenghong Qian - Eden Prairie MN, US
James Daughton - Eden Prairie MN, US
Robert Fayfield - St. Louis Park MN, US
Assignee:
NVE Corporation - Eden Prairie MN
International Classification:
B32B009/00
US Classification:
428/469000, 428/698000
Abstract:
A ferromagnetic thin-film based magnetoresistive device with a first ferromagnetic material based film having electrically conductive, ferromagnetic material nanogranules embedded in an intergranular material of a smaller electrical conductivity first nonmagnetic. The device may have an intermediate layer adjacent the first ferromagnetic material based film and a second film is on the other side of the intermediate layer of a substantially ferromagnetic material. The first film is less than 1.0 m thick.

Three-Axis Magnetic Sensor

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US Patent:
20210356533, Nov 18, 2021
Filed:
Oct 22, 2018
Appl. No.:
16/476270
Inventors:
Zhenghong Qian - Eden Prairie MN, US
Ru Bai - Hangzhou, Zhejiang, CN
International Classification:
G01R 33/00
G01R 33/02
G01R 33/09
Abstract:
A three-axis magnetic sensor apparatus is described that is processed together into a single chip, with high performance, low cost, as well as small size. The three-axis magnetic sensor apparatus include a substrate, a two-axis magnetic sensing structure and a single-axis sensing structure. The two-axis sensing magnetic structure consisting of two shielded Wheatstone bridge configurations in conjunction with an annular or semi annular magnetic flux-guiding structure, and the single-axis sensing structure consisting of a push-pull Wheatstone bridge in conjunction with a flux guide that is capable of generating a fringe field whose horizontal component is proportional to the vertical component of an external magnetic field. The two-axis magnetic sensing structure and the single-axis structure are processed together into a single chip, and can be used to measure respectively X, Y and Z components of external magnetic fields.
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Zhenghong Qian from Eden Prairie, MN Get Report