US Patent:
20130017498, Jan 17, 2013
Inventors:
Weidong Mao - Hoboken NJ, US
Chang-Hwan Choi - Edgewater NJ, US
International Classification:
G02B 7/198
G03F 7/20
Abstract:
A two-beam interference lithography system offers large-area nanopatterning with tunability of pattern periodicities. The tunable feature is achieved by placing two rotatable mirrors in the two expanded beam paths which can conveniently be regulated for the designed pattern periodicities. While the effective interference pattern coverage is mainly determined by the optical coherence length and mirror size, the minimum pattern coverage area is as large as the effective coherence length of the laser and the selected mirror size over a wide range of periodicities.