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Wadad Brooke Dubbelday

from Jamul, CA
Age ~64
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Also known as:
Wadad B Dubbelday, Wadad Brook Dubbelday, Wadad R Dubbelday, Wadad B Ruthberg
Phone and address:
15395 Rocky Mountain Rd, Jamul, CA 91935
(619) 855-7361
Related to:
Richard Dorman Heaslet, 47Kevin D Layton, 63Allyson E White, 62Bill Gibson, 89Kade Garner, 45Kelli Layton, 41
Connected to:
Chad E Dubbelde, 50Mark Dubbels, 81Brian C Dubber, 35Charles A Dubber, 75Melissa D Dubber, 46Anja Dubberke, 52Caroline I Dubberly, 68Mark Dubberley, 66Mary L Dubberly, 95Mary E Dubberley, 78

Wadad Dubbelday Phones & Addresses

  • 15395 Rocky Mountain Rd, Jamul, CA 91935 (619) 855-7361
  • Spring Valley, CA
  • San Diego, CA
  • Rochester, NY

Work

Company: Ssc pacific Position: Business portfolio manager

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Uc San Diego 1992 to 1998 Specialities: Electrical Engineering

Skills

Systems Engineering

Languages

English

Interests

Home Improvement • Shooting • Reading • Gourmet Cooking • Sports • Home Decoration • Cooking • Electronics • Outdoors • Music • Family Values • Movies • Christianity • Kids • Parenting • Travel • Boating • Traveling • International Traavel

Industries

Defense & Space

Resumes

Resumes

Wadad Dubbelday Photo 1

Business Portfolio Manager

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Location:
15395 Rocky Mountain Rd, Jamul, CA 91935
Industry:
Defense & Space
Work:
Ssc Pacific
Business Portfolio Manager
Education:
Uc San Diego 1992 - 1998
Doctorates, Doctor of Philosophy, Electrical Engineering Florida Institute of Technology 1977 - 1981
Bachelors, Bachelor of Science, Physics
Skills:
Systems Engineering
Interests:
Home Improvement
Shooting
Reading
Gourmet Cooking
Sports
Home Decoration
Cooking
Electronics
Outdoors
Music
Family Values
Movies
Christianity
Kids
Parenting
Travel
Boating
Traveling
International Traavel
Languages:
English

Publications

Us Patents

Liquid Level Sensor And Detector

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US Patent:
59427485, Aug 24, 1999
Filed:
Feb 26, 1997
Appl. No.:
8/806958
Inventors:
Stephen D. Russell - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2714
H05B 3300
US Classification:
2502141
Abstract:
A light emitting photonic structure has a transparent substrate, such as sapphire, supporting a layer of group IV semiconductor material, such as silicon, having at least one porous region from which light is emitted as a response to a stimulus. An example of such a photonic structure is described in U. S. patent application Ser. No. 08/118,900. The photonic structure can be used to assess the presence of various fluids. The photonic structure is disposed to be contacted by the fluid to be sensed should it be present. The light emitting region of the photonic structure is stimulated by an appropriate source, and the light emitted by the photonic source is detected by a detector. The light emitting region of the photonic structure will emit a certain luminescence in air and should the light emitting region be contacted by other fluid or fluids, this luminescence can be affected and the corresponding change in luminescence can be detected thus the presence of these fluids can be sensed. Because the photonic structure has a light emitting region is formed on a transparent substrate, the light emitting region can be both excited and interrogated through the transparent substrate and outside of the presence of the fluid to be sensed. Hence absorption of the excitation radiation used as well as the luminescence emitted by the fluid to be sensed is eliminated.

Method Of Forming A High Voltage Silicon-On-Sapphire Photocell Array

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US Patent:
53309189, Jul 19, 1994
Filed:
Aug 31, 1992
Appl. No.:
7/938920
Inventors:
Wadad B. Dubbelday - Spring Valley CA
Larry D. Flesner - San Diego CA
George P. Imthurn - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 3118
US Classification:
437 2
Abstract:
A method is provided for forming a multi-cell photovoltaic circuit on an insulating substrate, comprising the steps of: forming a photovoltaic junction between p-type and n-type layers in a silicon wafer; bonding the silicon wafer to an insulating substrate after forming the photovoltaic junction; patterning the silicon wafer to produce isolated photovoltaic cells; and electrically interconnecting the photovoltaic cells.

Laterally Disposed Nanostructures Of Silicon On An Insulating Substrate

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US Patent:
61035408, Aug 15, 2000
Filed:
Nov 4, 1998
Appl. No.:
9/185990
Inventors:
Stephen D. Russell - San Diego CA
Robert C. Dynes - San Diego CA
Paul R. de la Houssaye - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Randy L. Shimabukuro - San Diego CA
Andrew S. Katz - La Jolla CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2120
US Classification:
438 22
Abstract:
A single crystal silicon film nanostructure capable of optical emission is aterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of fabricating efficient electrical contact structures to the nanostructure is made possible. The method of the invention begins with the deposition of ultrathin layers of silicon on the substrate. A Solid Phase Epitaxy improvement process is then used to remove crystalline defects formed during the deposition. The silicon is then annealed and thinned using thermal oxidation steps to reduce its thickness to be on the order of five nanometers in height. The width and length of the nanostructure are defined by lithography. The nanometer dimensioned silicon is then spin-coated with a resist with width and length definition in the resist being performed by way of electron beam exposure.

Optical Rf Bandpass Filter And Method For Manufacturing Same

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US Patent:
56872631, Nov 11, 1997
Filed:
Oct 2, 1995
Appl. No.:
8/537373
Inventors:
Shannon D. Kasa - San Diego CA
Randy L. Shimabukuro - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Debra M. Gookin - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G02B 626
G02B 508
US Classification:
385 31
Abstract:
A method for manufacturing an optical RF bandpass filter comprises the st of: (1) mounting an optical fiber having first and second ends in a fiber support structure having first and second surfaces so that the first end is exposed at the first surface and the second end is exposed at the second surface; (2) forming a first layered mirror structure on a first substrate to create a first mirror wafer structure having a first reflective surface; (3) forming a second layered mirror structure on a second substrate to create a second mirror wafer structure having a second reflective surface; (4) affixing the first reflective surface of the first mirror wafer structure to the first surface of the fiber support structure; and (5) affixing the second reflective surface of the second mirror wafer structure to the second surface of the fiber support structure.

Method For Making Silicon Germanium Alloy And Electric Device Structures

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US Patent:
59517573, Sep 14, 1999
Filed:
May 6, 1997
Appl. No.:
8/851768
Inventors:
Wadad B. Dubbelday - Spring Valley CA
Paul R. de la Houssaye - San Diego CA
Shannon D. Kasa - San Diego CA
Isaac Lagnado - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
C30B 2502
US Classification:
117102
Abstract:
A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C. , exposing the passivated surface to a flow of about 1 slm of about 2 percent silane in a hydrogen carrier and a flow of at least 200 sccm of about 10 percent germane in a hydrogen carrier to form a layer of single crystal silicon germanium alloy on the passivated surface of the sapphire substrate, and ramping the temperature down to about 650 degrees C. during the step of exposing the passivated surface to the germane gas.

Laterally Disposed Nanostructures Of Silicon On An Insulating Substrate

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US Patent:
59628634, Oct 5, 1999
Filed:
Sep 13, 1995
Appl. No.:
8/528386
Inventors:
Stephen D. Russell - San Diego CA
Robert C. Dynes - San Diego CA
Paul R. de la Houssaye - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Randy L. Shimabukuro - San Diego CA
Andrew S. Katz - La Jolla CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2906
US Classification:
257 14
Abstract:
A single crystal silicon film nanostructure capable of optical emission is laterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of fabricating efficient electrical contact structures to the nanostructure is made possible. The method of the invention begins with the deposition of ultrathin layers of silicon on the substrate. A Solid Phase Epitaxy improvement process is then used to remove crystalline defects formed during the deposition. The silicon is then annealed and thinned using thermal oxidation steps to reduce its thickness to be on the order of five nanometers in height. The width and length of the nanostructure are defined by lithography. The nanometer dimensioned silicon is then spin-coated with a resist with width and length definition in the resist being performed by way of electron beam exposure.

Optically Powered Photomultiplier Tube

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US Patent:
51966905, Mar 23, 1993
Filed:
Jun 18, 1991
Appl. No.:
7/721844
Inventors:
Larry D. Flesner - San Diego CA
Stephen A. Miller - Upland CA
Wadad B. Dubbelday - Spring Valley CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01J 4014
US Classification:
250207
Abstract:
An optically powered photomultiplier tube is provided, comprising a vacuum chamber having a window for incident optical radiation which is to be detected; a photocathode to receive the optical radiation; an electron multiplier system within the chamber to amplify the electron current from the photocathode; an anode to receive the amplified electron current; a high voltage photocell array positioned within the chamber for generating high voltage electrical power that is provided to the electron multiplier system; a system for delivering optical power to the photocell array; a first electrical contact penetrating the container in a vacuum tight manner and operably coupled to the anode; and a second electrical contact penetrating the container in a vacuum tight manner and operably coupled to the photocell array.

Electroluminescent Device In Silicon On Sapphire

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US Patent:
56613130, Aug 26, 1997
Filed:
Mar 8, 1996
Appl. No.:
8/614783
Inventors:
Wadad B. Dubbelday - Spring Valley CA
Randy L. Shimabukuro - San Diego CA
Stephen D. Russell - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 3300
H01L 4700
US Classification:
257103
Abstract:
Electroluminescent devices are formed on a transparent sapphire substrate follows. Crystalline silicon is formed on the sapphire substrate and patterned into a mesa. An electrode of, for example, titanium silicide, is formed in the silicon around the mesa, and an electrically insulating layer is formed over the electrode. The crystalline silicon is exposed on the mesa, and a porous silicon layer is formed on the crystalline silicon. An electrode made of aluminum, for example, is formed on the porous silicon layer. This electrode need not be transparent. An outer insulating layer may be formed on the aluminum electrode and additional electrodes may be formed on and through the outer insulating layer to make electrical contact with the titanium silicide and aluminum electrodes, respectively. A voltage source may be connected to the electrodes to pass a current through the porous silicon to cause light to be emitted from the porous silicon through the sapphire substrate.
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Wadad Brooke Dubbelday from Jamul, CA, age ~64 Get Report