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Vijay D Parkhe

from San Jose, CA
Age ~64
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Also known as:
Vijay Te Parkhe, Vijay O Parkhe, Vuay Parkhe, Vijay D Parke, Vijay D Parkel, Parkhe Vd
Phone and address:
4054 Bouquet Park Ln, San Jose, CA 95135
(408) 531-8372
Related to:
Goonjan Parkhe, 31Chandan Parkhe, 59
Connected to:
Aditya H Parkhe, 41Babak Parkhideh, 43Alex Parkhill, 30Daniel E Parkhill, 40Jennifer Parkhill, 40Nick A Parkhill, 35Tammy J Parkhill, 59Ashley Parkhouse, 35Antoinette C Parkhurst, 64Barbara A Parkhurst, 65

Vijay Parkhe Phones & Addresses

  • 4054 Bouquet Park Ln, San Jose, CA 95135 (408) 531-8372
  • Surprise, AZ
  • Mesa, AZ
  • Sunnyvale, CA
  • Piscataway, NJ
  • Santa Clara, CA
  • Highland Park, NJ
  • Edison, NJ
  • River Edge, NJ
  • 4054 Bouquet Park Ln, San Jose, CA 95135 (619) 760-3373

Publications

Us Patents

Method And Apparatus For Sputter Etch Conditioning A Ceramic Body

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US Patent:
6395157, May 28, 2002
Filed:
Sep 23, 1998
Appl. No.:
09/159009
Inventors:
Nitin Khurana - Santa Clara CA
Vince Burkhart - San Jose CA
Steve Sansoni - San Jose CA
Vijay Parkhe - Sunnyvale CA
Eugene Tzou - Los Altos CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
20429834, 20429833, 20429831, 20429806, 20429807, 20429808, 20429815
Abstract:
A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

Chemical Vapor Deposition Of Niobium Barriers For Copper Metallization

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US Patent:
6475902, Nov 5, 2002
Filed:
Mar 10, 2000
Appl. No.:
09/522635
Inventors:
Gilbert Hausmann - Ben Lomond CA
Vijay Parkhe - San Jose CA
Jagadish Kalyanam - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 214763
US Classification:
438627, 438648, 438683, 438771
Abstract:
A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRRâ) , the formula (NRRâ) Nb NRâ, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the films resistivity, and densify the film.

Substrate Support Having Bonded Sections And Method

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US Patent:
6503368, Jan 7, 2003
Filed:
Jun 29, 2000
Appl. No.:
09/607533
Inventors:
Arnold Kholodenko - San Francisco CA
Vijay Parkhe - Sunnyvale CA
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Wing L. Cheng - Sunnyvale CA
Alexander M. Veytser - Mountain View CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
15634551, 15634552, 15634553, 15634548, 118728, 118500, 118723 I
Abstract:
A substrate support comprises first, second and third sections connected to one another by first and second bonds , one of the sections comprises a surface adapted to receive a substrate. The first bond comprises a first bonding material and the second bond comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

Controlled Resistivity Boron Nitride Electrostatic Chuck Apparatus For Retaining A Semiconductor Wafer And Method Of Fabricating The Same

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US Patent:
6535372, Mar 18, 2003
Filed:
Jun 20, 2001
Appl. No.:
09/885646
Inventors:
Vijay D. Parkhe - San Jose CA
Chandra V. Deshpandey - Fremont CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01T 2300
US Classification:
361234, 279128
Abstract:
Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.

Reduction Of Metal Oxide In A Dual Frequency Etch Chamber

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US Patent:
6547934, Apr 15, 2003
Filed:
May 21, 1998
Appl. No.:
09/082746
Inventors:
Barney M. Cohen - Santa Clara CA
Gilbert Hausmann - San Jose CA
Vijay Parkhe - Sunnyvale CA
Zheng Xu - Foster City CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C25B 500
US Classification:
20415715, 216 13, 216 78, 148565
Abstract:
The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.

Chemical Vapor Deposition Of Barriers From Novel Precursors

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US Patent:
6743473, Jun 1, 2004
Filed:
Feb 16, 2000
Appl. No.:
09/505638
Inventors:
Vijay D. Parkhe - San Jose CA
Gilbert Hausmann - Ben Lomond CA
Jagadish Kalyanam - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1606
US Classification:
427252, 4272491, 427255394, 4272557
Abstract:
The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R) ) MH , where Cp is a cyclopentadienyl functional group, R is a substituent on the cyclopentadienyl functional group comprising an organic group having at least one carbon-silicon bond, n is an integer from 0 to 5, x is an integer from 1 to 4, M is a metal, and y is the valence of the metal M. A metal, metal nitride, metal carbon nitride, or metal silicon nitride film is deposited on a heated substrate by thermal or plasma enhanced decomposition of the organometallic precursor in the presence of a processing gas, such as hydrogen, nitrogen, ammonia, silane, and combinations thereof, at a pressure of less than about 20 Torr. By controlling the reactive gas composition either metal or metal nitride films may be deposited. The deposited metal or metal nitride film may then be exposed to a plasma to remove contaminants, densify the film, and reduce film resistivity.

Full Area Temperature Controlled Electrostatic Chuck And Method Of Fabricating Same

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US Patent:
6853533, Feb 8, 2005
Filed:
Jun 13, 2001
Appl. No.:
09/881979
Inventors:
Vijay D. Parkhe - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01T023/00
US Classification:
361234
Abstract:
A semiconductor wafer support assembly and method of fabricating the same are provided. In one embodiment, the method and resulting assembly include attaching a pedestal joining-ring to a bottom surface of a ceramic puck. Low temperature brazing a composite cooling plate structure to the bottom surface of the ceramic puck, where the pedestal joining-ring circumscribes the composite cooling plate structure. Thereafter, a pedestal is electron-beam welded to the pedestal joining-ring.

Detachable Electrostatic Chuck Having Sealing Assembly

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US Patent:
7589950, Sep 15, 2009
Filed:
Oct 13, 2006
Appl. No.:
11/549594
Inventors:
Vijay D. Parkhe - San Jose CA, US
Steven V. Sansoni - Livermore CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/683
B23B 31/28
US Classification:
361234, 279128
Abstract:
A detachable electrostatic chuck is capable of being attached to a pedestal in a process chamber. The chuck comprises an electrostatic puck having a ceramic body with an embedded electrode. The chuck also has a baseplate below the electrostatic puck with a lower surface which is bonded to a sealing assembly comprising a sealing plate and sealing ring. The sealing plate and ring are polished to form a gas-tight seal between the chuck and pedestal to prevent gas leakage from or into this region.
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Vijay D Parkhe from San Jose, CA, age ~64 Get Report