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Victor Te Rossin

from Mountain View, CA
Age ~66
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Also known as:
Victor A Rossin, Vic A Rossin
Phone and address:
274 Shoreline Blvd, Mountain View, CA 94041
(650) 961-2253
Related to:
Gregory T Yasuda, 54Paul B Slater, 84Stanley Yasuda, 87Sarah I SlaterSarah Yasuda, 53
Connected to:
Betsy S Rossin, 62Brian A Rossin, 53Philip T Rossin, 32Walter Rossin, 40Tracy N Rossing, 42Anthony J Rossini, 57Bryan K Rossini, 40Danielle K Rossini, 56Frances A Rossini, 35Giovanni L Rossini, 30

Victor Rossin Phones & Addresses

  • 274 Shoreline Blvd, Mountain View, CA 94041 (650) 961-2253
  • 49 Showers Ct, Mountain View, CA 94040 (650) 948-3488
  • Santa Clara, CA
  • Tarzana, CA

Work

Company: Jdsu Dec 2010 to Aug 2015 Position: Distinguished technical staff

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Peter the Great St.petersburg Polytechnic University 1974 to 1983 Specialities: Physics

Skills

Photonics • Optics • Semiconductors • Metrology • Fiber Optics • Laser • Engineering Management • Optoelectronics • Product Development • R&D • Cross Functional Team Leadership • Physics • Laser Physics • Optical Engineering • Optical Fiber • Manufacturing • Characterization • Simulations • Design of Experiments • Testing • Research and Development

Languages

English • Russian

Emails

v***[email protected]

Industries

Telecommunications

Resumes

Resumes

Victor Rossin Photo 1

Distinguished Technical Staff

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Location:
San Francisco, CA
Industry:
Telecommunications
Work:
Jdsu Dec 2010 - Aug 2015
Distinguished Technical Staff
Lumentum Dec 2010 - Aug 2015
Distinguished Technical Staff
Jdsu Nov 2006 - Dec 2010
Senior Engineering Manager
Jdsu Feb 2001 - Nov 2006
Senior Staff Engineer
Sdl Plc Jan 1997 - Feb 2001
Senior Staff Engineer
Education:
Peter the Great St.petersburg Polytechnic University 1974 - 1983
Doctorates, Doctor of Philosophy, Physics
Skills:
Photonics
Optics
Semiconductors
Metrology
Fiber Optics
Laser
Engineering Management
Optoelectronics
Product Development
R&D
Cross Functional Team Leadership
Physics
Laser Physics
Optical Engineering
Optical Fiber
Manufacturing
Characterization
Simulations
Design of Experiments
Testing
Research and Development
Languages:
English
Russian

Publications

Us Patents

High-Power, Kink-Free, Single Mode Laser Diodes

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US Patent:
6816531, Nov 9, 2004
Filed:
Mar 3, 2000
Appl. No.:
09/518421
Inventors:
Victor Rossin - Mountain View CA
Ross A. Parke - Fremont CA
Jo S. Major - San Jose CA
Assignee:
JDS Uniphase Corporation - San Jose CA
International Classification:
H01S 500
US Classification:
372 64, 372 43, 372 50, 372 45, 372 54, 385132
Abstract:
A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion extending from the first end and a second portion extending from the second end. The first and second portions are coupled by a tapered waveguide. A width of the first portion is less than a width of the second portion. The first portion filters lateral optical modes higher than a fundamental lateral optical mode. An output is emitted from the second end of the optical waveguide.

Single Spatial Mode Output Multi-Mode Interference Laser Diode With External Cavity

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US Patent:
7366210, Apr 29, 2008
Filed:
Nov 15, 2006
Appl. No.:
11/560047
Inventors:
Martin H. Muendel - Oakland CA, US
Victor Rossin - Mountain View CA, US
Bruno Acklin - Mountain View CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
H01S 3/098
H01S 5/00
US Classification:
372 18, 372 501
Abstract:
The invention relates to a conventional broad-area laser having a single-mode output through the phenomenon of multimode interference (MMI) in step-index waveguides. Another aspect of the present invention relates to a very robust multi-mode compound cavity laser design that is fully defined by the geometry and the refractive index profile of the MMI region, which is quite insensitive to slight macro-scale refractive index variations due to manufacturing variation or temperature. As the self-imaging position shifts linearly in the refractive index, the confocal beam parameter can be made relatively long.

Semiconductor Laser Diode With Advanced Window Structure

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US Patent:
7567603, Jul 28, 2009
Filed:
Sep 17, 2007
Appl. No.:
11/856501
Inventors:
Matthew Glenn Peters - Menlo Park CA, US
Victor Rossin - Mountain View CA, US
Erik Paul Zucker - Los Altos CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
H01S 5/00
US Classification:
372 4501, 372 4601, 372 87
Abstract:
The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section, a current blocking section and a partially current blocking section.

Semiconductor Laser Diode With Narrow Lateral Beam Divergence

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US Patent:
7602828, Oct 13, 2009
Filed:
Nov 12, 2007
Appl. No.:
11/938511
Inventors:
Victor Rossin - Mountain View CA, US
Matthew Glenn Peters - Menlo Park CA, US
Erik Paul Zucker - Los Altos CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
H01S 5/00
US Classification:
372 4501, 372 4301, 372 87
Abstract:
The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.

Laser Diode

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US Patent:
7830938, Nov 9, 2010
Filed:
Dec 15, 2008
Appl. No.:
12/334764
Inventors:
Victor Rossin - Mountain View CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
H01S 5/00
US Classification:
372 4501, 372 4301, 372 4601
Abstract:
The present invention provides a laser diode having both a small vertical far-field beam divergence and a large vertical optical confinement factor, as well as a method of fabricating the laser diode. The laser diode comprises a layer stack of semiconductor material, which includes a mode-splitting layer having a low refractive index inserted between waveguide layers. In addition to increasing the vertical near-field beam width of the laser diode, the mode-splitting layer also produces a shoulder in an optical mode generated in an active layer of the layer stack, increasing vertical overlap of the optical mode with the active layer.

High Efficiency, Wavelength Stabilized Laser Diode Using Awg's And Architecture For Combining Same With Brightness Conservation

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US Patent:
20070223552, Sep 27, 2007
Filed:
Nov 17, 2006
Appl. No.:
11/561132
Inventors:
Martin Muendel - Oakland CA, US
David Dougherty - Mountain View CA, US
Matthew Peters - Menlo Park CA, US
Victor Rossin - Mountain View CA, US
Robert Sargent - Santa Rosa CA, US
Len Marabella - Santa Rosa CA, US
Kuochou Tai - Fremont CA, US
Bruno Acklin - Mountain View CA, US
Yongan Wu - San Jose CA, US
Kenneth Dzurko - Monte Sereno CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
H01S 5/00
US Classification:
372050120
Abstract:
The invention relates to high power semiconductor lasers based on a laser diode array waveguide grating (DAWG) in which the wavelength is stabilized using an array waveguide grating (AWG) in an external cavity configuration. Another aspect of the present invention relates to techniques for efficiently coupling optical gain element arrays to an AWG. Another feature provides for the efficient and brightness-conserving combination of multiple high power DAWG lasers into a single output.

Range Imaging Devices And Methods

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US Patent:
20130314693, Nov 28, 2013
Filed:
May 23, 2012
Appl. No.:
13/478902
Inventors:
Jay A. Skidmore - San Jose CA, US
Victor Rossin - Mountain View CA, US
Pierre Doussiere - Sunnyvale CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
G01C 3/08
H01S 5/40
US Classification:
356 501, 356 401, 372 501
Abstract:
An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.

Multi-Wavelength Laser Diode

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US Patent:
20220344910, Oct 27, 2022
Filed:
Jul 8, 2021
Appl. No.:
17/305484
Inventors:
- San Jose CA, US
Victor ROSSIN - Mountain View CA, US
James J. MOREHEAD - Oakland CA, US
John G. BAI - Cupertino CA, US
International Classification:
H01S 5/50
H01S 5/40
H01S 5/12
Abstract:
In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.
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Victor Te Rossin from Mountain View, CA, age ~66 Get Report