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Thorsten Bernd Lill

from Kalaheo, HI
Age ~60
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Also known as:
Thorsten B Lill, Thorsten Brend Lill, Thorsten Bernd Te Lill, Pippi S
Related to:
Joans Lill, 31Heike Lill, 58Lill Jonas, 31Heike LillAlexander T LillTracy P Kennedy, 53
Connected to:
Elizabeth A Lill, 67Glenn E Lill, 71Greg Lill, 103Marion J Lill, 52Nancy Lill, 64Ronald Lill, 58Christopher L Lilla, 52Lewis A Lilla, 57David P Lilland, 87Amy Lillard, 49

Thorsten Lill Phones & Addresses

  • Kalaheo, HI
  • Koloa, HI
  • 88 Muir Ave, Santa Clara, CA 95051 (408) 423-8711 (408) 781-4729
  • San Jose, CA
  • Sunnyvale, CA
  • Woodridge, IL
  • 88 Muir Ave, Santa Clara, CA 95051 (408) 781-4729

Work

Position: Craftsman/Blue Collar

Education

Degree: High school graduate or higher

Interests

career opportunities, consulting offers,...

Resumes

Resumes

Thorsten Lill Photo 1

Vice President At Applied Materials

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Location:
United States
Experience:
Applied Materials (Public Company; AMAT; Renewables & Environment industry): Vice President,  (March 1995-Present) Argonne National Laboratory (Government Agency; Research industry): Scientist,  (November 1993-February 1995) 

Publications

Us Patents

Stable Plasma Process For Etching Of Films

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US Patent:
6399507, Jun 4, 2002
Filed:
Sep 22, 1999
Appl. No.:
09/401603
Inventors:
Padmapani Nallan - San Jose CA
John Holland - San Jose CA
Valentin Todorov - Fremont CA
Thorsten Lill - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438706, 438710, 438720, 156345
Abstract:
In accordance with the present invention, process parameters are controlled to provide a stable etch plasma. We have discovered that it is possible to operate a stable plasma with a portion of the power deposited to the plasma being a capacitive contribution and a portion of the power deposited being an inductive contribution. In particular, a stable plasma may be obtained within two process regions. In the first region, the gradient of the capacitive power to the power applied to the inductively coupled source for plasma generation [âP /âP ] is greater than 0. In the second region, plasma stability is controlled so that [âP /âP ] is less than 0 and so that P P. Typically, the magnitude of P is less than about 10% of the magnitude of P. In addition, in a plasma processing apparatus having a dual power control, at a given application of power to the plasma generation source, the stability of the plasma is extended by increasing the pressure in the etch process chamber. This enables operation of the etch process using lower power application for plasma generation.

Endpoint Detection In The Fabrication Of Electronic Devices

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US Patent:
6406924, Jun 18, 2002
Filed:
Apr 5, 1999
Appl. No.:
09/286493
Inventors:
Michael N. Grimbergen - Redwood City CA
Thorsten B. Lill - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
438 9, 156345, 216 60, 356357, 438723, 438743
Abstract:
A chamber comprises a radiation source capable of emitting radiation having a wavelength that is substantially absorbed in a predetermined pathlength in a thickness of a layer on a substrate, and a radiation detector adapted to detect the radiation. The radiation is substantially absorbed in a first thickness of the layer and after at least partial processing of the layer is at least partially transmitted through a second thickness of the layer and reflected by one or more underlayers of the substrate.

Plasma Reactor With Dry Clean Apparatus And Method

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US Patent:
6518190, Feb 11, 2003
Filed:
Dec 23, 1999
Appl. No.:
09/470560
Inventors:
Thorsten Lill - Sunnyvale CA
Jeffrey D. Chinn - Foster City CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
438710, 15634548, 118723 I, 134 11
Abstract:
A preferred embodiment of the plasma reactor of the present invention provides a chamber adapted to process a workpiece having at least one wall capable of allowing inductive power coupling into the reactor chamber. A source power antenna, capable of generating a processing plasma, confronts a portion of the at least one wall. A dry clean antenna is located adjacent the chamber beside a portion of the at least one wall not confronted by the source power antenna. During workpiece processing, the dry clean antenna preferably has essentially a floating potential. After workpiece processing has ceased, a dry clean plasma may be generated by inductive coupling using the dry clean antenna. Embodiments of the present invention allow dry clean plasma characteristics to be optimized to improve dry clean effectiveness. The source power antenna also may couple power to the dry clean plasma, preferably in parallel with the dry clean antenna. With such embodiments, the source power antenna may be operated so that it couples less power to the dry clean plasma, while the dry clean antenna couples more.

Sidewall Polymer Forming Gas Additives For Etching Processes

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US Patent:
6583065, Jun 24, 2003
Filed:
Aug 3, 1999
Appl. No.:
09/366509
Inventors:
Raney Williams - Portland OR
Jeffrey Chinn - Foster City CA
Jitske Trevor - Sunnyvale CA
Thorsten B. Lill - Sunnyvale CA
Padmapani Nallan - Sunnyvale CA
Tamas Varga - Sunnyvale CA
Herve Mace - Aix-en-Provence, FR
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438714, 438719, 438721, 438723, 438724, 438711, 216 67, 216 79, 216 80
Abstract:
A process of reducing critical dimension (CD) microloading in dense and isolated regions of etched features of silicon-containing material on a substrate uses a plasma of an etchant gas and an additive gas. In one version, the etchant gas comprises halogen species absent fluorine, and the additive gas comprises fluorine species and carbon species, or hydrogen species and carbon species.

Method For In Situ Removal Of A Dielectric Antireflective Coating During A Gate Etch Process

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US Patent:
6613682, Sep 2, 2003
Filed:
Oct 21, 1999
Appl. No.:
09/422816
Inventors:
Mohit Jain - Santa Clara CA
Thorsten Lill - Sunnyvale CA
Jeff Chinn - Foster City CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438706, 438720, 438723, 438724
Abstract:
The present invention provides a method for the simultaneous removal of an oxygen and/or nitrogen-containing dielectric antireflective coating (âDARCâ) during plasma etching of an underlying layer in a film stack. According to the method of the invention, the film stack is etched using a plasma containing reactive fluorine species. The concentration of reactive fluorine species within the plasma is controlled based on one or more of the following factors: the oxygen content of the antireflective coating, the nitrogen content of the antireflective coating, the thickness of the antireflection coating layer, and the thickness of the underlying film stack layer. The disclosure of the invention provides preferred combinations of plasma source gases which provide for the simultaneous removal of an oxygen and/or nitrogen-containing DARC layer during etching of an underlying etch stack layer, where the underlying stack layer comprises a metal silicide, polysilicon, or a metal. Also provided herein is a formula for determining the total amount of DARC removed using a given etch process recipe, based on the etch selectivity of the particular process recipe.

Method And Apparatus For Monitoring And Controlling Wafer Fabrication Process

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US Patent:
6632321, Oct 14, 2003
Filed:
Jan 5, 1999
Appl. No.:
09/225825
Inventors:
Thorsten Lill - Sunnyvale CA
David Mui - Santa Clara CA
Michael Grimbergen - Redwood City CA
Assignee:
Applied Materials, Inc - Santa Clara CA
International Classification:
C23F 100
US Classification:
15634524, 15634526, 15634527, 15634528
Abstract:
A method and apparatus for monitoring, measuring and/or controlling the etch rate in a dry etch semiconductor wafer processing system. The wafer processing system has a monitoring assembly which comprises an electromagnetic radiation source and detector which interferometrically measures the etch rate. The actual rate of change of the etch as it progresses is measures by this technique and is compared to a model of a desired rate of change in a controller. The error between the actual rate of change and the desired rate of change is then used to vary at least one of the process parameters of the system in a direction tending to null the difference.

Channelled Chamber Surface For A Semiconductor Substrate Processing Chamber

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US Patent:
6656283, Dec 2, 2003
Filed:
May 31, 2000
Appl. No.:
09/585710
Inventors:
Thorsten Lill - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118715, 118728, 118723 I, 15634551, 1563453, 15634529
Abstract:
A method and apparatus for providing particle collection channels in a semiconductor substrate processing chamber. The channels are formed in either a chamber liner or directly into the walls and/or bottom of the chamber. The channels direct trapped particles toward a chamber exhaust port.

Apparatus For Plasma Etching At A Constant Etch Rate

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US Patent:
6660127, Dec 9, 2003
Filed:
Feb 12, 2002
Appl. No.:
10/075223
Inventors:
Padmapani Nallan - San Jose CA
John Holland - San Jose CA
Valentin Todorov - Fremont CA
Thorsten Lill - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
15634548, 118723 I, 118723 AN
Abstract:
We have discovered a method which permits plasma etching at a constant etch rate. The constant etch rate is achieved by controlling plasma process parameters so that a stable plasma is obtained, with a portion of the power deposited to the plasma being a capacitive contribution, and a portion being an inductive contribution. In particular, a stable plasma may be obtained within two process regions. In the first region, the gradient of the capacitive power to the power applied to the inductively coupled source for plasma generation [âP /âP ] is greater than 0. In the second region, plasma stability is controlled so that [âP /âP ] is less than 0 and so that P P. Typically, the magnitude of P is less than about 10% of the magnitude of P. Operation of the etch process in a stable plasma region enables use of a timed etch end point.
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Thorsten Bernd Lill from Kalaheo, HI, age ~60 Get Report