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Tamer Elkhatib Phones & Addresses

  • San Jose, CA
  • Troy, NY
  • Santa Clara, CA
  • Sunnyvale, CA

Publications

Us Patents

Readout Voltage Uncertainty Compensation In Time-Of-Flight Imaging Pixels

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US Patent:
20180176492, Jun 21, 2018
Filed:
Dec 20, 2016
Appl. No.:
15/385198
Inventors:
- Redmond WA, US
Onur Can Akkaya - Palo Alto CA, US
Tamer Elkhatib - San Jose CA, US
Swati Mehta - San Mateo CA, US
Satyadev H. Nagaraja - San Jose CA, US
Vijay Rajasekaran - Saratoga CA, US
International Classification:
H04N 5/363
H04N 5/3745
H04N 5/33
Abstract:
Pixel arrangements in time-of-flight sensors are presented that include sensing elements that establish charges related to incident light, charge storage elements that accumulate integrated charges transferred from the sensing elements, and diffusion nodes configured to establish measurement voltages representative of the integrated charges that are dumped from the charge storage elements. The pixel arrangement includes analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to a measurement phase. The analog domain output circuitry subtracts the stored reset voltage from the stored measurement voltage for processing into a pixel output voltage that at least partially reduces readout voltage uncertainty of the pixel arrangement.

Quantum-Efficiency-Enhanced Time-Of-Flight Detector

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US Patent:
20160225922, Aug 4, 2016
Filed:
Jun 30, 2015
Appl. No.:
14/755306
Inventors:
- Redmond WA, US
Satyadev Nagaraja - San Jose CA, US
Tamer Elkhatib - San Jose CA, US
Cyrus Bamji - Fremont CA, US
Swati Mehta - Palo Alto CA, US
International Classification:
H01L 31/0232
G01S 7/481
H01L 31/028
G01S 17/32
Abstract:
A time-of-flight detector includes a semiconductor layer and a light modulation structure. The semiconductor layer is configured to translate light radiation into electrical charge. The light modulation structure is configured to increase a path of interaction of light radiation through the semiconductor layer. In some example implementations, the light modulation structure is configured to deflect at least some light radiation at an increased angle through the semiconductor layer. In some example implementations, the light modulation structure is configured to reflect light radiation more than once through the semiconductor layer.
Tamer A Elkhatib from San Jose, CA, age ~44 Get Report