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Suresh S Vagarali

from Columbus, OH
Age ~78
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Also known as:
Suresh I
Phone and address:
6867 Linbrook Blvd, Columbus, OH 43235
(614) 846-1037
Related to:
Amir R Patel, 47Sharad VagaraliNancy Morrison, 53Tonya Lewis, 50William G Boyd, 58Teresa B Couch, 64
Connected to:
Srinivas Vagasena, 52Christy N Vagedes, 60Craig J Vagedes, 57Nancy J Vagedes, 67Alex Vagelatos, 72John A Vagenas, 100Panagiotis Vagenas, 45David M Vagg, 66Donald P Vagge, 67George S Vaggelatos, 46

Suresh Vagarali Phones & Addresses

  • 6867 Linbrook Blvd, Columbus, OH 43235 (614) 846-1037
  • Shrewsbury, MA
  • Westerville, OH
  • 6867 Linbrook Blvd, Columbus, OH 43235 (419) 810-3673

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Resumes

Resumes

Suresh Vagarali Photo 1

Consulting Engineer

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Location:
Columbus, OH
Industry:
Mechanical Or Industrial Engineering
Work:

Consulting Engineer
Sandvik Apr 1, 2014 - Nov 2014
Hpht Technology Expert
General Electric Comapny Jul 1988 - Jan 2005
Senior Reaserch Engineer
Diamond Innovations, Inc., U.s.a. Jul 1988 - Jan 2005
Senior Engineer
Norton Company Apr 1982 - Jan 1988
Senior Research Engineer
Education:
University of Southern California 1974 - 1978
Skills:
R&D
Materials Science
Manufacturing
Process Engineering
Six Sigma
Engineering
Product Development
Lean Manufacturing
Process Improvement
Continuous Improvement
Materials
Design of Experiments
Suresh Vagarali Photo 2

Suresh Vagarali

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Suresh Vagarali Photo 3

Senior Engineer

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Location:
Columbus, OH
Industry:
Mining & Metals
Work:
Diamond Innovations Inc.
Sr. Engineer

Publications

Us Patents

Method Of Detection Of Natural Diamonds That Have Been Processed At High Pressure And High Temperatures

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US Patent:
6377340, Apr 23, 2002
Filed:
Oct 29, 1999
Appl. No.:
09/430477
Inventors:
Thomas Richard Anthony - Niskayuna NY
John Kieran Casey - Dublin, IE
Alan Cameron Smith - Dublin, IE
Suresh Shankarappa Vagarali - Columbus OH
Assignee:
General Electric Company - Schenectady NY
International Classification:
G01N 2100
US Classification:
356 30, 356244, 250372, 250330
Abstract:
A method for detecting whether a natural diamond has been processed at high pressure and high temperature (HPHT) conditions comprises steps of disposing the diamond in a cyrostat that is provided at temperatures equal to or less than liquid nitrogen; illuminating the diamond with a laser beam; recording an optical spectrum of the diamond with a photoluminescence spectrometer; and examining the optical spectrum of the diamond to detect an absence of selected photoluminescent spectral lines. The invention also sets forth a method for predicting whether a natural diamond has been treated under HPHT conditions.

High Pressure/High Temperature Production Of Colorless And Fancy-Colored Diamonds

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US Patent:
6692714, Feb 17, 2004
Filed:
Jan 8, 2003
Appl. No.:
10/338136
Inventors:
Suresh Shankarappa Vagarali - Columbus OH, 43235
Steven William Webb - Worthington OH, 43085
William Edwin Jackson - Cleveland OH, 44112-6300
William Frank Banholzer - Niskayuna NY, 12309
Thomas Richard Anthony - Schenectady NY, 12309-2514
George Rene Kaplan - Rye Brook NY, 10573
International Classification:
C01B 3106
US Classification:
423264, 423446
Abstract:
The present invention is directed to a method for changing the color of colored natural diamonds. The method includes placing a discolored natural diamond in a pressure-transmitting medium which is consolidated into a pill. Next, the pill is placed into a high pressure/high temperature (HP/HT) press at elevated pressure and elevated temperature for a time sufficient to improve the color of the diamond. The diamond may be exposed at elevated-pressure and elevated-temperature conditions within the graphite-stable region of the carbon-phase diagramâwithout significant graphitization of the diamond, or above the diamond-graphite equilibrium and within the diamond-stable region of the carbon-phase diagram. Finally, the diamond is recovered from said press. Colorless Type Ia and Type II diamonds may be made by this method.

High Pressure Production Of Perovskites And Resulting Products

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US Patent:
6780394, Aug 24, 2004
Filed:
Aug 16, 2001
Appl. No.:
09/931312
Inventors:
Suresh S. Vagarali - Columbus OH
John W. Lucek - Powell OH
Assignee:
Diamond Innovations, Inc. - Worthington OH
International Classification:
C01F 1100
US Classification:
4235931, 4235941, 4235942, 4235943, 4235944, 4235945, 4235946, 423595, 423596, 423598, 423599, 423600, 4235947, 4235948, 4235949, 42359412, 42359413, 42359415, 42359416, 423252, 423263
Abstract:
A perovskite feedstock (powder or preform) is placed in a high-pressure cell of a high pressure/high temperature (HP/HT) apparatus and subjected to pressures in excess of about 2 kbar and temperatures above about 800Â C. for a time adequate to increase the density of the preform.

Sintered Polycrystalline Gallium Nitride And Its Production

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US Patent:
6861130, Mar 1, 2005
Filed:
Nov 2, 2001
Appl. No.:
10/001575
Inventors:
Mark P. D'Evelyn - Niskayuna NY, US
David C. Pender - Schenectady NY, US
Suresh S. Vagarali - Columbus OH, US
Assignee:
General Electric Company - Pittsfield MA
International Classification:
B28B003/00
C01B021/06
US Classification:
428220, 264604, 423409
Abstract:
Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5. 5 and 6. 1 g/cm, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150 C. to 1300 C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200 to 1800 C. and a pressure ranging from about 5 to 80 Kbar.

Jadeite And Its Production

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US Patent:
6908674, Jun 21, 2005
Filed:
Mar 5, 2001
Appl. No.:
09/799192
Inventors:
Suresh Shankarappa Vagarali - Columbus OH, US
Thomas Richard Anthony - Schenectady NY, US
John Casey - Dublin, IE
Robert Charles DeVries - Burnt Hills NY, US
Stephen Lee Dole - Columbus OH, US
John William Lucek - Powell OH, US
Alan Cameron Smith - Dublin, IE
Biju Varghese - Worthington OH, US
Steven William Webb - Worthington OH, US
Assignee:
Diamond Innovations, Inc. - Worthington OH
International Classification:
B32B005/16
US Classification:
428402, 428406, 65 337, 65102, 65111
Abstract:
A jadeite material has a thickness in excess of about 1. 0 mm and CIELAB indices of L*>42, a*+6. The grain size of the jadeite material is less than about 30 microns and is an equiaxed grain structure. The jadeite material has an optical transmission peak between 500 and 565 nm with an I/Ioptical transmission ratio of over 40%. The first step in making the jadeite material is to wrap a glass block, convertible by HP/HT into jadeite and having a nominal composition of NaAlSiO, with a graphite or refractive metal sheet. The wrapped glass block is placed in an HP/HT apparatus, rapidly heated, and subjected therein to a pressure in excess of about 3 GPa and a temperature in excess of about 1000 C. for a time adequate to convert the glass block into jadeite. The jadeite material then is cooled and the pressure subsequently released.

High Pressure High Temperature Growth Of Crystalline Group Iii Metal Nitrides

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US Patent:
7063741, Jun 20, 2006
Filed:
Mar 27, 2002
Appl. No.:
10/063164
Inventors:
Mark Philip D'Evelyn - Niskayuna NY, US
Steven William Webb - Worthington OH, US
Suresh Shankarappa Vagarali - Columbus OH, US
Yavuz Kadioglu - Clifton Park NY, US
Zheng Chen - Dublin OH, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
C30B 9/12
US Classification:
117 73, 117 74, 117 76, 117 78, 117 81, 117213, 117 11, 117952
Abstract:
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

High Temperature High Pressure Capsule For Processing Materials In Supercritical Fluids

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US Patent:
7125453, Oct 24, 2006
Filed:
Jan 31, 2002
Appl. No.:
09/683659
Inventors:
Mark Philip D'Evelyn - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US
Robert Arthur Giddings - Slingerlands NY, US
Steven Alfred Tysoe - Ballston Spa NY, US
John William Lucek - Powell OH, US
Suresh Shankarappa Vagarali - Columbus OH, US
Joel Rice Dysart - Johnstown OH, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
C30B 7/10
US Classification:
117200, 117206, 117223
Abstract:
A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550 C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550 C. and about 1500 C.

Method For Reducing Defect Concentrations In Crystals

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US Patent:
7175704, Feb 13, 2007
Filed:
Jun 5, 2003
Appl. No.:
10/455007
Inventors:
Mark Philip D'Evelyn - Niskayuna NY, US
Thomas Richard Anthony - Schenectady NY, US
Stephen Daley Arthur - Glenville NY, US
Lionel Monty Levinson - Niskayuna NY, US
John William Lucek - Powell OH, US
Larry Burton Rowland - Scotia NY, US
Suresh Shankarappa Vagarali - Columbus OH, US
Assignee:
Diamond Innovations, Inc. - Worthington OH
International Classification:
C30B 7/10
US Classification:
117 2, 117 1, 117 68, 117 69, 117 70
Abstract:
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
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Suresh S Vagarali from Columbus, OH, age ~78 Get Report