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Shobhana R Punjabi

from San Jose, CA
Age ~50

Shobhana Punjabi Phones & Addresses

  • 4072 Beebe Cir, San Jose, CA 95135
  • 3229 Heritage Oaks Ct, San Jose, CA 95148
  • 1901 Halford Ave, Santa Clara, CA 95051
  • 620 Iris Ave, Sunnyvale, CA 94086
  • Mountain View, CA

Education

Degree: Associate degree or higher

Publications

Us Patents

Low Cost Application Of Oxide Test Wafer For Defect Monitor In Photolithography Process

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US Patent:
61717371, Jan 9, 2001
Filed:
Feb 3, 1998
Appl. No.:
9/017695
Inventors:
Khoi A. Phan - San Jose CA
Shobhana R. Punjabi - San Jose CA
Robert J. Chiu - Mt. View CA
Bhanwar Singh - Morgan Hill CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G03F 900
US Classification:
430 30
Abstract:
A low cost technique for detecting defects in photolithography processes in a submicron integrated circuit manufacturing environment combines use of a reusable test wafer with in-line processing to monitor defects using a pattern comparator system. A reusable test wafer having an oxide layer overlying a silicon substrate and having a thickness corresponding to a minimum reflectance for an exposure wavelength used for photolithography is patterned using a prescribed photolithographic fabrication process to form a repetitive pattern according to a prescribed design product rule. The pattern is formed using a reticle having a repetitive pattern array with a similar design rule as the product to be developed by the lithography processes. The patterned test wafer is then inspected using image-based inspection techniques, where the image has high resolution pixels of preferably 0. 25 microns per pixel.

Optimized Power Delivery For Multi-Layer Substrate

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US Patent:
20230071476, Mar 9, 2023
Filed:
Mar 24, 2022
Appl. No.:
17/702892
Inventors:
- San Jose CA, US
Shobhana Ram Punjabi - San Jose CA, US
Jie Xue - Dublin CA, US
International Classification:
H01L 23/498
Abstract:
A multi-layer substrate stacking a plurality of insulating substrates supports one or more devices. Each substrate includes a face supporting conductive traces and edges surrounding the face at a substantially perpendicular angle. The multi-layer substrate includes a ground plane on a first substrate and a power plane on a second substrate. The ground plane is connected to at least one ground pad disposed on a first edge of the first substrate, which provides a low inductance ground path to the ground plane. The power plane is connected to at least one power pad disposed on a second edge of the second substrate, which provides a low inductance power path to the power plane.

Hot Swap Circuit

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US Patent:
20170229257, Aug 10, 2017
Filed:
Apr 27, 2017
Appl. No.:
15/498999
Inventors:
- San Jose CA, US
Yang Li - San Jose CA, US
Jessica Leigh Kiefer - San Jose CA, US
Kan Chiu Seto - Saratoga CA, US
Shobhana Punjabi - San Jose CA, US
International Classification:
H01H 9/54
Abstract:
In one embodiment, a hot swap circuit is disclosed. The hot swap circuit includes a first switch connected to a power input line. The hot swap circuit also includes a first capacitor connected to the first switch that is charged when the first switch is closed. The hot swap circuit further includes a second switch connected to the first switch and the first capacitor. The hot swap circuit additionally includes an input capacitor connected to the second switch and located in parallel with an input line to a power system. When the second switch is closed, the input capacitor is charged.

Hot Swap Circuit

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US Patent:
20170045929, Feb 16, 2017
Filed:
Aug 12, 2015
Appl. No.:
14/824282
Inventors:
- San Jose CA, US
Yang Li - San Jose CA, US
Jessica Leigh Kiefer - San Jose CA, US
Kan Chiu Seto - Saratoga CA, US
Shobhana Punjabi - San Jose CA, US
International Classification:
G06F 1/32
Abstract:
In one embodiment, a hot swap circuit is disclosed. The hot swap circuit includes a first switch connected to a power input line. The hot swap circuit also includes a first capacitor connected to the first switch that is charged when the first switch is closed. The hot swap circuit further includes a second switch connected to the first switch and the first capacitor. The hot swap circuit additionally includes an input capacitor connected to the second switch and located in parallel with an input line to a power system. When the second switch is closed, the input capacitor is charged.
Shobhana R Punjabi from San Jose, CA, age ~50 Get Report