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Shannon Denise Kasa

from San Diego, CA
Age ~63
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Also known as:
Shannon D Kasa, Shannon Denise Felsch, Shannon D Felsch, Shanon D Felsch, Kasa Shannon
Phone and address:
3963 San Martine Way, San Diego, CA 92130
(858) 259-0506
Related to:
Fam KasaStephen W Kasa, 63Danielle Kasa, 31Shanea CardiffTristan Kyle Kasa, 29Alexandrea K Kasa, 34
Connected to:
Mary M Kasa, 74Stephen J Kasa, 86Zoltan Kasa, 75Ahmed E Kasab, 29Kimberly J Kasaba, 63Michael Kasaba, 59Reena T Kasabia, 43Dianne M Kasabula, 67Marine Kasabyan, 48Michael L Kasaczun, 60

Shannon Kasa Phones & Addresses

  • 3963 San Martine Way, San Diego, CA 92130 (858) 259-0506
  • Del Mar, CA
  • Sanger, CA
  • La Jolla, CA
  • 3963 San Martine Way, San Diego, CA 92130

Resumes

Resumes

Shannon Kasa Photo 1

Program Manager And Engineer

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Location:
San Diego, CA
Industry:
Defense & Space
Work:
Spawar
Program Manager and Engineer
Education:
Uc San Diego
Arizona State University
Skills:
Science
Project Management
Defense
Engineering
R&D
Federal Government
Government Contracting
Shannon Kasa Photo 2

Engineer

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Location:
San Diego, CA
Industry:
Research
Work:
Ssc Pac
Engineer

Publications

Us Patents

Method And Apparatus For Discerning Degradation Of Electromagnetic Radiating Tubes

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US Patent:
6667711, Dec 23, 2003
Filed:
Nov 20, 2002
Appl. No.:
10/302319
Inventors:
Narayan R. Joshi - Beaumont TX
David W. Brock - San Diego CA
Stephen D. Russell - San Diego CA
Shannon D. Kasa - San Diego CA
Graham A. Garcia - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01S 740
US Classification:
342165, 342173
Abstract:
The invention is designed to employ one or a multitude of sensors designed to allow operational monitoring of any of a variety of electromagnetic radiating tubes. Monitoring is conducted to detect a degradation in performance which can be used as a factor in deciding whether tube replacement is justified. Contrary to some past approaches that focused on averaged tube outputs, the invention is designed to examine individual tube pulses.

Method For Improving Reliability In Trench Structures

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US Patent:
6709976, Mar 23, 2004
Filed:
Jul 29, 2002
Appl. No.:
10/207419
Inventors:
Nackieb M. Kamin - La Mesa CA
Stephen D. Russell - San Diego CA
Stanley R. Clayton - Spring Valley CA
Shannon D. Kasa - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 214763
US Classification:
438638, 438700, 438743
Abstract:
The invention describes an improved method of fabricating trench structures. This method enhances trench structure reliability by reducing dielectric breakdown in high voltage applications, for example. The invention uses etching and thermal oxidation techniques to round and smooth the corners at the bottom of the trench structure. The smoothing of the trench corners reduces the electrical fields that cause insulator breakdown.

Nondestructive Acoustic Emission Testing System Using Electromagnetic Excitation And Method For Using Same

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US Patent:
6823736, Nov 30, 2004
Filed:
Nov 20, 2002
Appl. No.:
10/302320
Inventors:
David W. Brock - San Diego CA
Narayan R. Joshi - Beaumont TX
Stephen D. Russell - San Diego CA
Markham E. Lasher - San Diego CA
Shannon D. Kasa - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01N 2914
US Classification:
73587
Abstract:
A nondestructive acoustic emission testing system using electromagnetic excitation, comprises: a) an electromagnetic wave generator for generating electromagnetic waves that stimulate a test sample to generate acoustic energy; b) an acoustic energy sensor for detecting the acoustic energy and generating a first output signal that represents the acoustic energy; and c) a data processor for comparing the output signal with a reference and for generating a second output signal that represents a characteristic of the test sample.

Electromagnetic Sensor System And Method

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US Patent:
6998835, Feb 14, 2006
Filed:
Nov 20, 2002
Appl. No.:
10/302321
Inventors:
David W. Brock - San Diego CA, US
Narayan R. Joshi - Beaumont TX, US
Stephen D. Russell - San Diego CA, US
Markham E. Lasher - San Diego CA, US
Shannon D. Kasa - San Diego CA, US
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01R 23/16
G01N 29/00
US Classification:
324 7621, 324 7613, 73587
Abstract:
An electromagnetic sensor system. The system includes an electromagnetic excitable structure that generates an acoustic signal when irradiated with electromagnetic energy; an acoustic energy transducer sensor for generating a first output signal that represents the acoustic signal in response to the acoustic energy transducer detecting the acoustic signal; and a processor for determining whether the electromagnetic excitable structure is being irradiated by the electromagnetic energy in response to the processor receiving the first output signal.

Method For Forming Improved Electrical Contacts On Non-Planar Structures

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US Patent:
59982942, Dec 7, 1999
Filed:
Apr 29, 1998
Appl. No.:
9/069388
Inventors:
Stanley R. Clayton - San Diego CA
Stephen D. Russell - San Diego CA
Oswald I. Csanadi - San Diego CA
Shannon D. Kasa - San Diego CA
Charles A. Young - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 21265
H01L 2128
US Classification:
438659
Abstract:
A method is provided for improving silicide formation, and the electrical ntact provided thereby, on non-planar silicon structures. In this method, a semiconductor device structure is initially formed having non-planar surface regions. A metal layer is deposited on the non-planar surfaces. The metal deposition process step is followed by an off-axis implantation of non-dopant ions, causing a mixing of the metal and silicon atoms at the metal and non-planar silicon structure interface. The off-axes implantation also serves to disrupt the native silicon dioxide layer between the silicon and metal layers regions. Thermal processing is then used to form silicide on the non-planar surfaces of the semiconductor silicon structure.

Optical Rf Bandpass Filter And Method For Manufacturing Same

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US Patent:
56872631, Nov 11, 1997
Filed:
Oct 2, 1995
Appl. No.:
8/537373
Inventors:
Shannon D. Kasa - San Diego CA
Randy L. Shimabukuro - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Debra M. Gookin - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G02B 626
G02B 508
US Classification:
385 31
Abstract:
A method for manufacturing an optical RF bandpass filter comprises the st of: (1) mounting an optical fiber having first and second ends in a fiber support structure having first and second surfaces so that the first end is exposed at the first surface and the second end is exposed at the second surface; (2) forming a first layered mirror structure on a first substrate to create a first mirror wafer structure having a first reflective surface; (3) forming a second layered mirror structure on a second substrate to create a second mirror wafer structure having a second reflective surface; (4) affixing the first reflective surface of the first mirror wafer structure to the first surface of the fiber support structure; and (5) affixing the second reflective surface of the second mirror wafer structure to the second surface of the fiber support structure.

Method For Making Silicon Germanium Alloy And Electric Device Structures

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US Patent:
59517573, Sep 14, 1999
Filed:
May 6, 1997
Appl. No.:
8/851768
Inventors:
Wadad B. Dubbelday - Spring Valley CA
Paul R. de la Houssaye - San Diego CA
Shannon D. Kasa - San Diego CA
Isaac Lagnado - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
C30B 2502
US Classification:
117102
Abstract:
A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C. , exposing the passivated surface to a flow of about 1 slm of about 2 percent silane in a hydrogen carrier and a flow of at least 200 sccm of about 10 percent germane in a hydrogen carrier to form a layer of single crystal silicon germanium alloy on the passivated surface of the sapphire substrate, and ramping the temperature down to about 650 degrees C. during the step of exposing the passivated surface to the germane gas.

Ring Oscillator Based Chemical Sensor

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US Patent:
58956298, Apr 20, 1999
Filed:
Nov 25, 1997
Appl. No.:
8/977720
Inventors:
Stephen D. Russell - San Diego CA
Shannon D. Kasa - San Diego CA
Howard W. Walker - San Diego CA
International Classification:
G01N 2532
US Classification:
422 94
Abstract:
A chemical sensor couples a material that changes temperature in response to a chemical condition with an oscillator. The oscillator is coupled to the material to detect the change in temperature in the material so that the frequency of the oscillator changes in correspondence with the change in temperature as an indication of the chemical condition.
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Shannon Denise Kasa from San Diego, CA, age ~63 Get Report