US Patent:
20110073257, Mar 31, 2011
Inventors:
Rajinder Dhindsa - San Jose CA, US
Sathyanarayanan Mani - Fremont CA, US
Gautam Bhattacharyya - Fremont CA, US
International Classification:
C23F 1/08
Abstract:
An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.