David B. Kerwin - Colorado Springs CO, US Rockford Curby - Sunnyvale CA, US
Assignee:
Aeroflex Colorado Springs Inc. - Colorado Springs CO
International Classification:
G01T 1/24
US Classification:
25037011
Abstract:
A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.
Low Electrical And Thermal Impedance Semiconductor Component And Method Of Manufacture
Karl H. Tiefert - Los Altos Hills CA Rockford C. Curby - Santa Clara CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
B01J 1700
US Classification:
29583
Abstract:
A semiconductor component and a method for manufacturing the semiconductor component with low electrical and thermal impedances is provided. The semiconductor component includes a thin semiconductor device with a plurality of layers of various conductivity types forming the active regions and semiconductor/metallic transition layers. The low electrical impedance of the component is achieved by the use of the thin semiconductor device, while the low thermal impedance is provided by a thick pedestal metalization on the semiconductor device. The method for manufacturing such a device includes the fabrication of at least one semiconductor device on one surface of a semiconductor substrate. The second surface of the semiconductor substrate is selectively etched by a controlled process to form a cavity of limited lateral extent adjacent to each of the semiconductor devices on the one surface. The surfaces of the device and the second surface of the substrate are selectively metalized such that the second surface metalization fills each of the cavities.
- Lowell MA, US Rockford C. Curby - Sunnyvale CA, US
International Classification:
H03K 17/04 H03K 17/74 H03K 17/082
Abstract:
An apparatus includes a first circuit and a second circuit. The first circuit may be configured to inject charge into an I-region of a PIN diode in response to a first state of a control signal. The second circuit may be configured to remove charge from the I-region of the PIN diode in response to a second state of the control signal. A radio frequency switching time of the apparatus is generally about two orders of magnitude lower than a carrier lifetime of the PIN diode.
- Lowell MA, US Rockford C. Curby - Sunnyvale CA, US
International Classification:
H03K 17/04
Abstract:
An apparatus includes a first circuit and a second circuit. The first circuit may be configured to inject charge into an I-region of a PIN diode in response to a first state of a control signal. The second circuit may be configured to remove charge from the I-region of the PIN diode in response to a second state of the control signal. A radio frequency switching time of the apparatus is generally about two orders of magnitude lower than a carrier lifetime of the PIN diode.