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Robert Frenette Phones & Addresses

  • Essex Junction, VT
  • 258 Crescent Rd, Burl, VT 05401 (802) 864-1689
  • Burlington, VT
  • Bristol, CT
  • Saint Albans Bay, VT
  • New Britain, CT
  • Williston, VT
  • Colchester, VT

Work

Company: Automated building systems - Glastonbury, CT 2011 Position: Electrician and control technician

Education

School / High School: E.C. Goodwin Technical High School- New Britain, CT 1999

Resumes

Resumes

Robert Frenette Photo 1

Robert Frenette

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Skills:
Home Depot
Robert Frenette Photo 2

Robert Frenette

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Robert Frenette Photo 3

Robert Frenette Bristol, CT

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Work:
Automated Building Systems
Glastonbury, CT
2011 to 2012
Electrician and control Technician

Connecticut Temperature Controls
Newington, CT
2009 to 2010
Electrical Control Technician

Synergy Electrical Systems
Plainville, CT
2006 to 2009
Electrician and Control Technician

Grove Systems Inc
Killingworth, CT
2001 to 2006
Apprentice Electrician

Masotti Electric
Southington, CT
2000 to 2001
Apprentice Electrician

Harte Electric
South Windsor, CT
1999 to 2000
Apprentice Technician

Robert Frenette Photo 4

Robert Frenette

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Robert Frenette
Principal
Robert W Frenette
Business Services at Non-Commercial Site
21 Cedar Ln, Waterbury, CT 06716

Publications

Us Patents

Dual Work Function Cmos Device

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US Patent:
60283394, Feb 22, 2000
Filed:
Dec 14, 1998
Appl. No.:
9/211565
Inventors:
Robert O. Frenette - Burlington VT
Dale P. Hallock - Bristol VT
Stephen A. Mongeon - Essex Junction VT
Anthony C. Speranza - Essex Junction VT
William R. P. Tonti - Essex Junction VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2976
H01L 2994
H01L 31062
H01L 31113
H01L 31119
US Classification:
257364
Abstract:
A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.

Method For Producing Dual Work Function Cmos Device

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US Patent:
57704902, Jun 23, 1998
Filed:
Aug 29, 1996
Appl. No.:
8/705579
Inventors:
Robert O. Frenette - Burlington VT
Dale P. Hallock - Bristol VT
Stephen A. Mongeon - Essex Junction VT
Anthony C. Speranza - Austin TX
William R. P. Tonti - Essex Junction VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 218238
US Classification:
438199
Abstract:
A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.
Robert W Frenette from Essex Junction, VTDeceased Get Report