Robert J Champetier

7080940, Jul 25, 2006

May 5, 2004

10/839876

John P. Gotthold - Sunnyvale CA, US
Terry M. Stapleton - San Jose CA, US
Robert Champetier - Depoe Bay OR, US
Hung Dang - San Jose CA, US

Luxtron Corporation - Santa Clara CA

G01J 5/08
G01J 5/28
G01K 1/14
G01K 11/20
F21V 8/00
G02B 6/00

374161, 374 131, 374208, 374121, 385 12, 385147, 2504581, 2504591, 250 234, 2505781

A temperature sensor that has a thermally conducting contact with a surface that emits electromagnetic radiation in proportion to the temperature of the contact is disclosed. The sensor has a resilient member attached to the contact and configured to extend the contact toward the object to be measured. A first light waveguide is attached to the contact and is configured to transmit the electromagnetic radiation from the contact. The sensor has a guide with a bore formed therein that the first waveguide is insertable into. When the contact is moved, the first waveguide moves within the bore. A second waveguide is attached to the guide such that a variable gap is formed between the ends of the first waveguide and the second waveguide. Electromagnetic energy from the first waveguide traverses the gap and can be transmitted by the second waveguide. The guide allows the first waveguide to move with the contact in order to ensure that the contact is fully engaged with the surface of the object.

7374335, May 20, 2008

Feb 24, 2006

11/361543

John P. Gotthold - Sunnyvale CA, US
Terry M. Stapleton - San Jose CA, US
Robert Champetier - Depoe Bay OR, US
Hung Dang - San Jose CA, US

Luxtron Corporation - Santa Clara CA

G01K 11/12
G01K 11/20
G01K 11/32
G01J 5/08

374161, 374141, 374131

A luminescent temperature sensor comprising (i) an object having a recess, (ii) a layer of luminescent material disposed in the recess, wherein the luminescent material emits electromagnetic radiation having a detectable optical characteristic that is functionally dependent on the temperature of the object, and (iii) a light waveguide in optical communication with the layer of luminescent material, is provided. A test device for measuring a temperature in a processing step comprising (i) an object having a surface and having a recess in the surface of the object, (ii) a layer of luminescent material disposed in the recess, wherein the luminescent material emits electromagnetic radiation having a detectable optical characteristic that is functionally dependent on the temperature of the object in response to a source of excitation radiation, and (iii) an optical window that seals said layer of luminescent material in the recess in the surface of the object, is provided.

20070076780, Apr 5, 2007

Sep 30, 2005

11/241579

Robert Champetier - Depoe Bay OR, US

G01J 5/00
G01K 11/00

374121000, 374141000, 374161000

A system for measuring the true temperature of a substrate in a deposition system is disclosed. The temperature measurement system has at least one opening formed within a showerhead or manifold placed above a substrate of the deposition system. The temperature measurement system includes an optical pyrometer and reflectometer external to the coating chamber that looks through a window or windows and through the at least one opening in the showerhead to sense the substrate being coated. Depending on the particular chamber and showerhead configuration, the system either makes a passive emissivity correction or has an integral reflectometer for an active emissivity correction. Optical features confer an insensitivity to small motions of the showerhead in large coaters where optical alignment is not assured due to thermal and mechanical influences.

20080225926, Sep 18, 2008

May 9, 2008

12/118629

John P. Gotthold - Sunnyvale CA, US
Terry M. Stapleton - San Jose CA, US
Robert Champetier - Depoe Bay OR, US
Hung Dang - San Jose CA, US

G01J 5/00

374131

A vacuum processing chamber for measuring the temperature of a surface of an object comprising a cap is provided. The cap has a non-deformable end wall of thermally conducting material and a side wall connected thereto. An outside surface of the end wall is shaped to conform to a shape of the object surface to be measured. A surface on an inside of the end wall of the cap emits electromagnetic radiation having a detectable optical characteristic that is proportional to the temperature of the cap end wall. The vacuum processing chamber further comprises a light wave guide having one end held within the cap a distance from the radiation emitting element and in optical communication therewith.

58747117, Feb 23, 1999

Apr 17, 1997

8/843925

Robert J. Champetier - Scotts Valley CA
Avner Man - Carmiel, IL
Arnon Gat - Palo Alto CA
Ram Z. Fabian - Haifa, IL

AG Associates - San Jose CA

H05B 102

219497

The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. Through this method, the emissivity of the wafer has only a minor influence on the calculated temperature.

59601582, Sep 28, 1999

Jul 11, 1997

8/893699

Arnon Gat - Palo Alto CA
Robert J. Champetier - Scotts Valley CA
Ram Z. Fabian - Haifa, IL

AG Associates - San Jose CA

G01J 506
F27B 514
F27B 518

392416

The present invention is directed to an apparatus and process for filtering light in a thermal processing chamber. In particular, the apparatus of the present invention includes a first spectral filter spaced apart from a second spectral filter. The first spectral filter is spaced apart from the second spectral filter so as to define a cooling fluid channel therebetween through which a cooling fluid can be circulated. In order to prevent thermal radiation being emitted by the light source from interfering with the operation of a radiation sensing device contained in the chamber, the first spectral filter absorbs most of the thermal radiation being emitted by the light source at the operating wavelength of the radiation sensing device. The second spectral filter, on the other hand, is substantially transparent to thermal radiation at the operating wavelength of the radiation sensing device. If desired, various reflective coatings made from dielectric materials can also be applied to selected surfaces of the spectral filters to further prevent unwanted thermal radiation from being detected by the radiation sensing device and for preventing the spectral filters from increasing in temperature during operation of the chamber.

60272449, Feb 22, 2000

Jul 24, 1997

8/899865

Robert J. Champetier - Scotts Valley CA
David Egozi - Kiriat Tivon, IL

Steag RTP Systems, Inc. - San Jose CA

G01J 508
G01N 2500
H05B 102
A21B 200

374130

The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

59971754, Dec 7, 1999

Jul 22, 1999

9/359219

Robert J. Champetier - Scotts Valley CA
David Egozi - Kiriat Tivon, IL

Steag RTP Systems, Inc. - San Jose CA

G01J 500
H05B 102
A21B 200
G21K 106

374126

The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.