Rikhit F Arora

20080166596, Jul 10, 2008

Oct 23, 2007

11/877587

Anirban DAS - Chandler AZ, US
Michael Gene Racine - Phoenix AZ, US
Makoto Imakawa - Phoenix AZ, US
Steven Roger Kennedy - Chandler AZ, US
Rikhit Arora - Chandler AZ, US

HERAEUS INC. - Chandler AZ

G11B 5/66
B05D 5/00
C22C 28/00
C23C 14/34

428800, 2041921, 20429813, 420433, 427131

A Re-based alloy material comprises >50 at. % Re and at least one alloying material selected from grain size refinement elements X which have an atomic radius larger or smaller than that of Re and a solid solubility

53707397, Dec 6, 1994

Jun 15, 1992

7/899826

Robert F. Foster - Weston MA
Helen E. Rebenne - Fair Lawn NJ
Rene E. LeBlanc - Branford CT
Carl L. White - Gilbert AZ
Rikhit Arora - Mesa AZ

Materials Research Corporation - Orangeburg NY

C23C 1600

118725

A semiconductor wafer processing apparatus or module for a cluster tool is provided with a single wafer rotating susceptor that thins the gas boundary layer to facilitate the transfer of material to or from the wafer, in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto a rapidly rotating wafer, for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point at the wafer center. Smoothly shaped interior reactor surfaces include baffles and plasma cleaning electrodes to minimize turbulence. Inert gases from within the rotating susceptor minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD.

56101066, Mar 11, 1997

Mar 10, 1995

8/401859

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rikhit Arora - Mesa AZ

Sony Corporation - Tokyo
Materials Research Corporation - Park Ridge NJ

H01L 21465
H01L 21441

437245

A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400. degree. C. to about 500. degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.

56288298, May 13, 1997

Jun 3, 1994

8/253714

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rikhit Arora - Mesa AZ

Materials Research Corporation - Gilbert AZ

C23C 1600

118723E

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of zquartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder.

55674836, Oct 22, 1996

Jun 5, 1995

8/461665

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rikhit Arora - Mesa AZ

Sony Corporation - Tokyo
Materials Research Corporation - Park Ridge NJ

H05H 100

427535

A titanium nitride film is annealed at a temperature less than 500. degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

53564766, Oct 18, 1994

Jun 15, 1992

7/898800

Robert F. Foster - Weston MA
Helen E. Rebenne - Fair Lawn NJ
Rene E. LeBlanc - Branford CT
Carl L. White - Gilbert AZ
Rikhit Arora - Mesa AZ

Materials Research Corporation - Orangeburg NY

C23C 1600

118725

A semiconductor wafer processing apparatus is provided with a susceptor for supporting a wafer for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto an upwardly facing wafer on the susceptor. Smooth interior reactor surfaces include baffles and a susceptor lip and wall shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.

6140215, Oct 31, 2000

Mar 14, 1996

8/615453

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rikhit Arora - Mesa AZ

Tokyo Electron Limited - Tokyo

H01L 2120

438580

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder.

52735885, Dec 28, 1993

Jun 15, 1992

7/898560

Robert F. Foster - Weston MA
Helen E. Rebenne - Fair Lawn NJ
Rene E. LeBlanc - Branford CT
Carl L. White - Gilbert AZ
Rikhit Arora - Mesa AZ

Materials Research Corporation - Orangeburg NY

C23C 1650

118723E

A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.