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Reza M Golzarian

from Washougal, WA
Age ~63
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Also known as:
Tanesia Golzarian, Reza N
Related to:
Gabriella R Golzarian, 33David L Aldridge, 65Robert T Craig, 63Joseph AldridgeDavid S Golzarian, 29Megan L Aldridge, 33Joseph Aldridge, 30Anna E Braithwaite, 59Julie L Aldridge, 59Karen M Rice, 68
Connected to:
John C Golzari, 56Michael D Golzmane, 47Julia Goma, 39Adam H Gomaa, 33Ahmed Gomaa, 38Nefertiti G Gomaa, 48Taher A Gomaa, 49Gloria H Gomah, 70Dmitriy Goman, 37Doris A Goman, 82

Reza Golzarian Phones & Addresses

  • Washougal, WA
  • Sunnyvale, CA
  • Nordland, WA
  • 14220 SW Teal Blvd, Beaverton, OR 97008 (503) 521-9662
  • 12356 Meader Way, Beaverton, OR 97008 (503) 643-7551
  • 4201 179Th Ave, Portland, OR 97229 (503) 439-1099
  • Newark, DE
  • Honolulu, HI

Resumes

Resumes

Reza Golzarian Photo 1

Staff Materials Technologist At Intel Corp

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Position:
Staff Materials Development and Integration Technologist at Intel Corp
Location:
Portland, Oregon Area
Industry:
Computer Hardware
Work:
Intel Corp since Oct 2000
Staff Materials Development and Integration Technologist
Rodel/Rohm and Haas Electronic Materials 1997 - 2000
Advanced Materials Development Group Leader
Luxtron Corporation Jan 1995 - Jun 1997
Product & Applications Development Manager
Education:
San Francisco State University 1985 - 1995
BS & MS, Experimental Physics SFSU
BS & MS, Experimental Physics
Reza Golzarian Photo 2

Reza Golzarian

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Publications

Us Patents

Surface Planarization

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US Patent:
6875086, Apr 5, 2005
Filed:
Jan 10, 2003
Appl. No.:
10/340876
Inventors:
Reza M. Golzarian - Beaverton OR, US
Mansour Moinpour - San Jose CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B24B001/00
US Classification:
451 41, 451104, 451291, 451162, 451290, 451 63
Abstract:
Embodiments of methods and apparatus in accordance with the present invention provide a chemical mechanical planarization (CMP) process that provides single or multiple polishing pads to have a different rotational velocity, applied pressure and oscillation frequency on the surface of the substrate to address and compensate for the WIW (with-in-substrate) and WID (with-in-die) non-uniformities in planarization ability. The velocity of each polishing pad is adjustable providing a closer match to the substrate surface velocity over a particular zone to yield a linear velocity on the surface of the substrate.

Polishing Pad Conditioning

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US Patent:
6976907, Dec 20, 2005
Filed:
Dec 17, 2003
Appl. No.:
10/738549
Inventors:
Reza M. Golzarian - Beaverton OR, US
Mansour Moinpour - San Jose CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B24B001/00
US Classification:
451 56, 451443, 451444, 451 70, 451 72
Abstract:
An apparatus for conditioning a polishing pad of a CMP apparatus for making semiconductor wafers is provided which includes a control arm configured to extend at least partially over a polishing pad. The apparatus also includes at least one cylindrical conditioning piece coupled to the control arm where the control arm is configured to apply the at least one cylindrical conditioning piece to the polishing pad.

Unidirectionally Conductive Materials For Interconnection

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US Patent:
7084053, Aug 1, 2006
Filed:
Sep 30, 2003
Appl. No.:
10/676294
Inventors:
Reza M. Golzarian - Beaverton OR, US
Robert P. Meagley - Hillsboro OR, US
Seiichi Morimoto - Beaverton OR, US
Mansour Moinpour - San Jose CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 21/44
US Classification:
438610, 438597, 438598, 438615, 438643, 438645, 438652, 438653, 438659, 438678, 438679, 438680, 438626, 438627, 438629
Abstract:
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.

Electrically Enhanced Surface Planarization

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US Patent:
7097536, Aug 29, 2006
Filed:
Jun 30, 2004
Appl. No.:
10/883499
Inventors:
Reza M. Golzarian - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B24B 51/00
US Classification:
451 5, 451 36, 451 54, 451287
Abstract:
A substrate processing apparatus equipped to employ electrical potential to assist in planarization and/or conditioning is provided.

Using Acoustic Energy Including Two Lasers To Activate Implanted Species

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US Patent:
7153760, Dec 26, 2006
Filed:
Nov 24, 2003
Appl. No.:
10/720934
Inventors:
Reza M. Golzarian - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 21/322
H01L 21/425
H01L 21/44
US Classification:
438472, 438514, 438530, 438675
Abstract:
Acoustic energy may be utilized to generate phonons for activating implanted species. As a result, greater activation may be achieved with lower thermal budgets. Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In some embodiments, the acoustic energy may be coupled with rapid thermal annealing, laser annealing, or other annealing processes. The acoustic energy may be developed by vibrational sources, laser energy, or other sources.

Energy Enhanced Surface Planarization

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US Patent:
7156947, Jan 2, 2007
Filed:
Jun 30, 2004
Appl. No.:
10/883396
Inventors:
Reza M. Golzarian - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
C23F 1/00
B44C 1/22
US Classification:
15634512, 15634513
Abstract:
A substrate processing apparatus equipped to employ an energy directed at a process side of a substrate to enhance and control material removal is provided.

Pre-Coated Particles For Chemical Mechanical Polishing

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US Patent:
7229484, Jun 12, 2007
Filed:
Nov 27, 2002
Appl. No.:
10/307274
Inventors:
Reza M. Golzarian - Beaverton OR, US
Mansour Moinpour - San Jose CA, US
Andrea C. Oehler - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
C09K 3/14
B05D 3/00
B05D 5/00
B05D 1/00
B24B 37/04
US Classification:
51307, 51308, 51309, 427212, 427215, 427220, 427221, 4272481, 42725521, 4272556, 427427, 106 3
Abstract:
The present invention relates to the manufacture and use of novel pre-coated abrasive particles and particle slurries for the chemical mechanical polishing (CMP) of semiconductor wafers, thin films, inter-layer dielectric, metals, and other components during integrated circuit, flat panel display, or MEMS manufacturing. For example, polishing slurry abrasive particles can be pre-coated with additives, such as, inhibitors and/or surfactants during manufacture of the abrasive particles or slurry. The additive's opportunity to react directly with the abrasive particles early in the particle manufacturing process provides a slurry having a more stable, selectable, and predictable ratio of abrasive particles pre-coated with a more stable, selectable, and predictable amount and type of additives.

Unidirectionally Conductive Materials For Interconnection

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US Patent:
7405419, Jul 29, 2008
Filed:
Dec 28, 2005
Appl. No.:
11/321127
Inventors:
Reza M. Golzarian - Beaverton OR, US
Robert P. Meagley - Hillsboro OR, US
Seiichi Morimoto - Beaverton OR, US
Mansour Moinpour - San Jose CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 47/00
H01L 23/52
US Classification:
257 4, 257 41, 257 44, 257132, 257503, 257734, 257735, 257736, 257746, 257750, 257758, 257773, 257774, 257776, 257785
Abstract:
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.
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Reza M Golzarian from Washougal, WA, age ~63 Get Report