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Raphael A Soetan

from Queen Creek, AZ
Age ~61
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Also known as:
Raphael R Soetan, Ralph A Soetan, Jacqueline Soetan, Oetam S Raphael, Raphael N
Related to:
Courtney DoddNaiya A Soetan, 32Jacqueline L Soetan, 59Jacqueline SoetanNiyi A Soetan, 29
Connected to:
Willy Soetandyo, 48Edward Soetanto, 46Jessica Soetanto, 33Reginald A Soetanto, 69Jill M Soete, 51Michael L Soete, 60John R Soethe, 64Matt L Soethout, 38Michael T Soethout, 56Veronika E Soetjipto, 43

Raphael Soetan Phones & Addresses

  • Queen Creek, AZ
  • Phoenix, AZ
  • 1255 Chicago St, Chandler, AZ 85224 (480) 699-0106
  • Hillsboro, OR
  • Baton Rouge, LA
  • Gilbert, AZ
  • 1255 E Chicago Cir, Chandler, AZ 85225 (480) 703-1602

Work

Position: Professional/Technical

Education

Degree: High school graduate or higher

Resumes

Resumes

Raphael Soetan Photo 1

Raphael Soetan

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Location:
Phoenix, AZ
Industry:
Semiconductors
Skills:
Hardware Architecture
Asic
Soc
Low Power Design
Embedded Systems
Physical Design
Engineering
Simulations
Failure Analysis
Semiconductors
Electronics
Mixed Signal
Verilog
Functional Verification
Circuit Design
Vlsi
Program Management
Rtl Design
Systems Engineering
Analog
Static Timing Analysis
Debugging
Ic
Processors
Power Management
Eda
Systemverilog
Product Engineering
Tcl
Fpga
Testing
Cross Functional Team Leadership
Dft
Perl
Timing Closure
Logic Design
System Architecture
Computer Architecture
Arm
Engineering Management
Troubleshooting
Cmos
Digital Signal Processors
Embedded Software
Fmea
Microprocessors
Semiconductor Industry
Intel
Raphael Soetan Photo 2

Engineering Manager At Marvell Semiconductor

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Position:
Engineering Manager at Marvell Semiconductor
Location:
Phoenix, Arizona Area
Industry:
Electrical/Electronic Manufacturing
Work:
Marvell Semiconductor
Engineering Manager
Intel Corporation 1990 - 2006
Enginerring Manager

Publications

Us Patents

Tap Connections For Circuits With Leakage Suppression Capability

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US Patent:
6388315, May 14, 2002
Filed:
Aug 29, 2001
Appl. No.:
09/941829
Inventors:
Lawrence T. Clark - Phoenix AZ
Vikas R. Amrelia - Gilbert AZ
Raphael A. Soetan - Chandler AZ
Eric J. Hoffman - Chandler AZ
Tuan X. Do - Chandler AZ
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2352
US Classification:
257691, 257356, 257357
Abstract:
An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.

Tap Connections For Circuits With Leakage Suppression Capability

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US Patent:
RE42776, Oct 4, 2011
Filed:
May 23, 2007
Appl. No.:
11/802556
Inventors:
Lawrence T. Clark - Phoenix AZ, US
Vikas R. Amrelia - Gilbert AZ, US
Raphael A. Soetan - Chandler AZ, US
Eric J. Hoffman - Chandler AZ, US
Tuan X. Do - Chandler AZ, US
Assignee:
Marvell International Ltd. - Hamilton
International Classification:
H01L 23/52
US Classification:
257691, 257204, 257206, 257207, 257208, 257369, 257371, 257E2163, 257E27107, 257E27108, 257E27067, 257355, 257356, 257357, 257358, 257360, 257363, 257291, 257338
Abstract:
An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.

Tap Connections For Circuits With Leakage Suppression Capability

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US Patent:
RE43326, Apr 24, 2012
Filed:
May 24, 2007
Appl. No.:
11/802763
Inventors:
Lawrence T. Clark - Phoenix AZ, US
Vikas R. Amrelia - Gilbert AZ, US
Raphael A. Soetan - Chandler AZ, US
Eric J. Hoffman - Chandler AZ, US
Tuan X. Do - Chandler AZ, US
Assignee:
Marvell International Ltd. - Hamilton
International Classification:
H01L 21/20
US Classification:
438395, 438393, 438394, 361637, 361638, 361639, 307 58, 307147, 307148
Abstract:
An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.

Tap Connections For Circuits With Leakage Suppression Capability

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US Patent:
20020026261, Feb 28, 2002
Filed:
Aug 29, 2001
Appl. No.:
09/941489
Inventors:
Lawrence Clark - Phoenix AZ, US
Vikas Amrelia - Gilbert AZ, US
Raphael Soetan - Chandler AZ, US
Eric Hoffman - Chandler AZ, US
Tuan Do - Chandler AZ, US
International Classification:
G06F019/00
US Classification:
700/121000
Abstract:
An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.

Tap Connections For Circuits With Leakage Suppression Capability

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US Patent:
6368933, Apr 9, 2002
Filed:
Dec 15, 1999
Appl. No.:
09/464023
Inventors:
Lawrence T. Clark - Phoenix AZ
Vikas R. Amrelia - Gilbert AZ
Raphael A. Soetan - Chandler AZ
Eric J. Hoffman - Chandler AZ
Tuan X. Do - Chandler AZ
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2120
US Classification:
438395, 438393, 438394, 361637, 361638, 361639, 307 58, 307147, 307148
Abstract:
An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.
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Raphael A Soetan from Queen Creek, AZ, age ~61 Get Report