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Rajeewa R Arya

from Beaverton, OR
Age ~72
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Also known as:
Rajeewa Uma Arya, Arya R Rashmikant, Rajat Arya, Rejeena Arya, Arya Rajeewa, Susan Antognozzi
Phone and address:
15570 Snowy Owl Ln, Beaverton, OR 97007
(503) 524-7692
Related to:
Neeru Arya
Connected to:
Abdu I Arya, 32Abhishek Arya, 39Anish K Arya, 45Anshul Arya, 40Arief Arya, 54Banwari L Arya, 84Deepali Arya, 55Dharmendra V Arya, 88Dina Arya, 63Himani Arya, 49

Rajeewa Arya Phones & Addresses

  • 15570 Snowy Owl Ln, Beaverton, OR 97007 (503) 524-7692 (757) 253-0772
  • 3271 Deerfield Ct, Williamsburg, VA 23185 (757) 253-0772
  • 3217 Deerfield Ct, Williamsburg, VA 23185
  • 3821 E Steeplechase Way, Williamsburg, VA 23188 (757) 253-0772
  • 724 Locust St, Lower Gwynedd, PA 19002 (215) 646-2034
  • Ambler, PA
  • 1745 Fairway Dr, Jamison, PA 18929 (215) 343-4073
  • Fremont, CA
  • Pawtucket, RI
  • Doylestown, PA
  • Eagleville, PA

Resumes

Resumes

Rajeewa Arya Photo 1

Founder And Principal

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Location:
Portland, OR
Industry:
Wireless
Work:
Arya International
Founder and Principal
Moser Baer India Ltd Nov 2008 - Dec 2011
Chief Executive Officer
Moser Baer India Ltd Sep 2007 - Oct 2008
Senior Vice President and Chief Technology Officer
Optisolar Technologies Jul 2006 - Aug 2007
Vice President Process and Chief Technology Officer
Oregon Institute of Technology 2004 - 2006
Director, Oregon Renewable Energy Center
Education:
Brown University 1979 - 1983
Doctorates, Doctor of Philosophy, Philosophy Indian Institute of Technology, Kanpur 1977 - 1979
Jadavpur University 1975 - 1977
Master of Science, Masters, Physics Indian Institute of Technology, Kanpur
Masters, Master of Technology
Skills:
Solar Pv
Learning Center
Team Building
Cleantech
Transferring
Consulting
Synergies
Market
Pools
Solar Energy
Cds
Vendors
Cost
Articulate
Copper
Netherlands
Finance
Substrates
Structure
Thin Films
Return on Investment
Serving
Driving
Machinery
Construction
Semiconductor Industry
Co Authored
Temporary Placement
Program Evaluation
Cross Functional Team Leadership
Facilitation
Design of Experiments
Highly Qualified
Product Management
Solar Power
Ascent
Tqm
Renewable Energy
Film
Process Technology
Management
Revenue
Design
Si
Simulations
Science
Spc
Funding
Patents
Hydroelectric
Technical Team
Engaging
Materials Science
Silicon
Mw
Nanotechnology
Hiring
Norway
Ic
Coordinated
Project Management Tools
Optics
Physics
Publications
Source
Operational Strategies
Engineering Management
Product Diversification
Human Resources
Pennsylvania
Collaborative
Execution
Business Meetings
Plant Operations
Guidance
Record of Success
System
Business Services
Owl
Atlanta
Engagements
Engineering
Strategy
New Process
Solution Implementation
Industry Research
Strategies
Product Innovation
Operations Management
Pv
Corporations
Testing
Piloting
Denver
Cobol
Offshore
Training
Probability
Glass
Conferences
Subject Matter Expert
Business Management
Supply
Ieee
Project Management
Product Development
American
Research
Transitioning
Results Driven
Process Engineering
Investigation
Wafer
Chicago
R&D
Advanced Materials
Process Simulation
Promoting
Technical Papers
Producing
Laboratory
Photovoltaics
R
Trusted Advisor
Cut
Power
Segments
Safeguarding
Sige
Perspective
Power Generation
C
Instrumental
Coordination
Related Matters
Scratch
New Delhi
Configurations
Virginia
Accountability
Applications
Arm
Global Business Development
Thompson
Debate
Universities
Business Development
Sensors
Negotiation
Business Alignment
Energy
Scientific
Cost Savings
Characterization
Operations
Stage
Weight
Energy Conservation
Electricians
Marketing
Colorado
Solid State Physics
Inverters
Social Influence
Indian
Technical Support
Technology Consulting
Failure Analysis
Waterfalls
Project
Contractual Agreements
House
Intellectual Property
Corporate Development
Re Engineering
Statewide
Paper
Presentations
Pricing
Project Management Training
Encompassing
Responsibility
Montreal
Usa
Packaging
Energy Systems
Fortune
Six Sigma
Solar Cells
Distribution
International
Roadmap
Technology Management
Renewal
Germany
Efficient
Educational Programs
Hev
Production Process
Start Ups
Commissioning
Government
Electronics
Powerview
Process Improvement
Forefront
Materials
Image Capture
Product Lifecycle Management
Throughput
Strengthening
India
Proposal Writing
Manufacturing
Interviews
China
Mitsubishi
Budgets
Business Strategy
Plate
Semiconductors
Staff Development
Scientists
Meetings
Icp
Alternative Energy
Metrology
Directing
Farms
Recruiting
North American
Commercialization
Automation
Prototype
Languages:
English
Hindi
Rajeewa Arya Photo 2

Rajeewa Arya

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Rajeewa Arya
Principal
Oregon Renewable Energy Center
School/Educational Services
7726 SE Harmony Rd, Portland, OR 97222
Rajeewa Arya
Principal
Clackamas Community College
Junior College · Colleges, Universities, and Professional Schools · Colleges & Universities · Junior Colleges · Junior Colleges & Technical In
19600 Molalla Ave, Redland, OR 97045
(503) 657-6958, (503) 594-6000, (503) 655-5153, (503) 657-6958
Rajeewa Arya
Director Oregon Renewable Energy Center
Oregon Advanced Technology Consortium
Junior College
29353 SW Town Ctr Loop E, Charbonneau, OR 97070
(503) 657-6958, (503) 655-8925

Publications

Us Patents

Monolithic Multi-Junction Solar Cells With Amorphous Silicon And Cis And Their Alloys

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US Patent:
6368892, Apr 9, 2002
Filed:
Jun 29, 2000
Appl. No.:
09/606298
Inventors:
Rajeewa R. Arya - Jamison PA
Assignee:
BP Corporation North America Inc. - Chicago IL
International Classification:
H01L 2120
US Classification:
438 96, 438 86
Abstract:
Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline n-duped amorphous silicon. Cadmium sulfide can be deposited on the CIS or CIGS polycrystalline semiconductor by solution growth, sputtering or evaporation. A transparent conductive oxide can be deposited on the cadmium sulfide by low pressure chemical vapor deposition. The microcrystalline n-doped amorphous silicon and the amorphous silicon semiconductor can be deposited by enhanced plasma chemical vapor deposition. The amorphous silicon can comprise: hydrogenated amorphous silicon, hydrogenated amorphous silicon carbon, or hydrogenated amorphous silicon germanium. Triple junction solar cells can be produced with an amorphous silicon front cell, an amorphous silicon germanium middle cell, and a CIS or CIGS polycrystalline back cell, on a substrate.

Front Transparent Conductor Assembly For Thin-Film Photovoltaic Cells And Method

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US Patent:
8026438, Sep 27, 2011
Filed:
Nov 29, 2007
Appl. No.:
11/947373
Inventors:
Marvin S. Keshner - Sonora CA, US
Paul McClelland - Monmouth OR, US
Rajeewa Arya - Beaverton OR, US
Gautam Ganguly - Cupertino CA, US
Assignee:
NovaSolar Holdings Limited - Tortola
International Classification:
H01L 31/0216
US Classification:
136256
Abstract:
A front transparent conductor assembly and, in one embodiment, a photovoltaic cell, includes at least three transparent conductor layers. In one embodiment, first and second transparent conductors comprised of SnO2 are positioned above and below a third transparent conductor comprised of ZnO2. In one embodiment, the second transparent conductor layer is significantly thicker than either the first or third transparent conductor layers. In one embodiment of a photovoltaic cell incorporating such an assembly, a sealing layer of SiO2 is interposed between a superstrate and the first transparent conductor. In another embodiment, first and second intermediate layers of ZnSnO3 are incorporated into the assembly, with the first intermediate layer interposed between the first and second transparent conductors and with the second intermediate layer interposed between the second and third transparent conductors.

Amorphous Silicon Photovoltaic Cells Having Improved Light Trapping And Electricity-Generating Method

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US Patent:
20080264483, Oct 30, 2008
Filed:
Oct 19, 2007
Appl. No.:
11/875367
Inventors:
Marvin S. Keshner - Sonora CA, US
Paul McClelland - Monmouth OR, US
Rajeewa R. Arya - Beaverton OR, US
International Classification:
H01L 31/04
US Classification:
136256, 136252
Abstract:
An amorphous silicon photovoltaic cell exhibiting improved light trapping, and a method for generating electricity from sunlight therewith. The cell comprises a plurality of layers, including a transparent superstrate; a specular, first transparent conductor positioned below the transparent superstrate; at least one p-i-n structure having an active layer positioned below the first transparent conductor; a second transparent conductor positioned below the p-i-n structure; and a layer of transparent material positioned below the second transparent conductor. The layer of transparent material may be textured amorphous silicon having a relatively high dielectric constant. The cell may further include a back coating positioned below the layer of transparent material, and a back reflector positioned below the back coating layer.

Conformal Protective Coating For Solar Panel

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US Patent:
20090139567, Jun 4, 2009
Filed:
Nov 29, 2007
Appl. No.:
11/947543
Inventors:
Philip Chihchau Liu - Fremont CA, US
Marvin S. Keshner - Sonora CA, US
Paul McClelland - Monmouth OR, US
Donald Winston Rice - San Jose CA, US
Rajeewa Arya - Beaverton OR, US
International Classification:
H01L 31/0216
B05D 5/12
US Classification:
136256, 427 74
Abstract:
A multilayer conformal coating is optimized in both composition and geometry to protect the back and sides of a transparent-fronted thin-film solar photovoltaic panel or similar device from various damage mechanisms associated with long-term outdoor exposure without an additional backcap or edge frame. A “barrier stack” or “barrier layer” of inorganic moisture-barrier and chemical-barrier layers is applied to the back of the photovoltaic functional film stack, extending into a bare-substrate border zone around the functional stack edges. The barrier stack shields the functional stack from moisture and chemical invasion, and the coated border zone effectively seals the vulnerable edges of the functional stack. An “envelope stack” or “envelope layer” of thicker polymer films is applied over the mechanically delicate inorganic barrier stack and around the solar photovoltaic panel edges. The envelope stack electrically insulates the solar photovoltaic panel and substantially protects the panel back and sides from mechanical shock, stress, and abrasion, thermal stress, fire, weathering, and UV-exposure degradation.

Enhancement Of Short-Circuit Current By Use Of Wide Bandgap N-Layers In P-I-N Amorphous Silicon Photovoltaic Cells

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US Patent:
50551418, Oct 8, 1991
Filed:
Jan 19, 1990
Appl. No.:
7/467367
Inventors:
Rajeewa R. Arya - Jamison PA
Anthony W. Catalano - Rushland PA
Assignee:
Solarex Corporation - Rockville MD
International Classification:
H01L 31075
H01L 3118
US Classification:
136258
Abstract:
A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure which includes first, second, and third n-layers successively formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.

Multijunction Photovoltaic Device And Fabrication Method

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US Patent:
52465063, Sep 21, 1993
Filed:
Jul 16, 1991
Appl. No.:
7/730177
Inventors:
Rajeewa R. Arya - Jamison PA
Anthony W. Catalano - Furlong PA
Assignee:
Solarex Corporation - Rockville MD
International Classification:
H01L 31075
H01L 3118
US Classification:
136249
Abstract:
A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Method Of Removing Electrical Shorts And Shunts From A Thin-Film Semiconductor Device

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US Patent:
47494549, Jun 7, 1988
Filed:
Nov 17, 1986
Appl. No.:
6/931072
Inventors:
Rajeewa R. Arya - Doylestown PA
Robert S. Oswald - Newtown PA
Assignee:
Solarex Corporation - Rockville MD
International Classification:
C25F 312
US Classification:
2041293
Abstract:
A method of removing electrical shorts and shunts from a thin-film semiconductor device having pairs of electrodes with exposed contact surfaces wherein each pair of electrodes is separated by a semiconductor film. The disclosed method comprises the steps of coating the exposed contact surfaces with an ionic solution and successively applying a reverse-bias voltage between the exposed contact surfaces of each pair of electrodes. The ionic solution has an etching rate that increases with increased temperature so that the leakage current flowing through shorts and shunts located between each respective pair of electrodes in response to the reverse-bias voltage will create a local temperature increase at the shorts and shunts and selectively etch or oxidize the shorts and shunts, rendering them substantially nonconductive. The exposed contact surfaces can be coated using a sponge applicator or spray apparatus. The preferred ionic solution comprises an acid mixture diluted to one part in at least five parts water.

Superlattice Doped Layers For Amorphous Silicon Photovoltaic Cells

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US Patent:
47189479, Jan 12, 1988
Filed:
Apr 17, 1986
Appl. No.:
6/853032
Inventors:
Rajeewa R. Arya - Doylestown PA
Assignee:
Solarex Corporation - Rockville MD
International Classification:
H01L 3106
US Classification:
136258
Abstract:
Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.
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Rajeewa R Arya from Beaverton, OR, age ~72 Get Report