Inventors:
- Carlsbad CA, US
Peter DeDobbelaere - San Diego CA, US
Kosei Yokoyama - San Diego CA, US
Sherif Abdalla - Carlsbad CA, US
Steffen Gloeckner - San Diego CA, US
John Guckenberger - San Diego CA, US
Thierry Pinguet - Arlington WA, US
Gianlorenzo Masini - Carlsbad CA, US
Daniel Kucharski - Carlsbad CA, US
International Classification:
H04B 10/2575
H01L 27/12
H04B 10/40
H01L 21/84
Abstract:
Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses. The devices may be fabricated on semiconductor-on-insulator (SOI) wafers utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.