Search

Pavan Reddy Aella

from Eagle, ID
Age ~45
Get Report
Also known as:
Pavan R Aella, Pavan K Aella, Pavan Kummar Aella, Pavanreddy Reddy Aella, Pavanreddy K Aella, Pavan Reddy A, Kumar Pavan Reddy, Kumar Reddy, Kumar Redoy
Phone and address:
1353 N Luge Ave, Pearl, ID 83616
Related to:
Anna U Jurek, 45
Connected to:
Tracey L Aella, 57John P Aellen, 96Melissa M Aello, 62Victor M Aello, 69Alysa S Aelvoet, 38Lauren Aelvoet, 42Quentin Aelvoet, 47Loretta T Aemisegger, 81Richard P Aemisegger, 50Danni L Aemmer, 46

Pavan Aella Phones & Addresses

  • 1353 N Luge Ave, Eagle, ID 83616
  • Mountain Home, ID
  • 5952 S Olmstead Ave, Boise, ID 83709
  • Tempe, AZ
  • Donnelly, ID
  • Springfield, MO
  • 1130 E Orange St, Tempe, AZ 85281

Work

Company: Micron technology Position: Engineer

Education

School / High School: Arizona State University 2002 to 2007

Industries

Semiconductors

Resumes

Resumes

Pavan Aella Photo 1

Engineer At Micron Technology

View page
Position:
engineer at Micron Technology
Location:
Boise, Idaho Area
Industry:
Semiconductors
Work:
Micron Technology
engineer
Education:
Arizona State University 2002 - 2007

Publications

Us Patents

Methods Of Forming Charge Storage Structures Including Etching Diffused Regions To Form Recesses

View page
US Patent:
20130040429, Feb 14, 2013
Filed:
Aug 8, 2011
Appl. No.:
13/205316
Inventors:
Alex Schrinsky - Boise ID, US
Anish Khandekar - Boise ID, US
Pavan Aella - Boise ID, US
Niraj B. Rana - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/336
H01L 21/306
US Classification:
438268, 438705, 257E21219, 257E2141
Abstract:
Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.

Methods Of Forming Charge Storage Structures Including Etching Diffused Regions To Form Recesses

View page
US Patent:
20140349454, Nov 27, 2014
Filed:
Aug 11, 2014
Appl. No.:
14/456337
Inventors:
- Boise ID, US
Anish Khandekar - Boise ID, US
Pavan Aella - Boise ID, US
Niraj B. Rana - Boise ID, US
International Classification:
H01L 27/115
US Classification:
438268
Abstract:
Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
Control profile
Pavan Reddy Aella from Eagle, ID, age ~45 Get Report