Omar U Need

40113515, Mar 8, 1977

Jan 29, 1975

5/545063

Edward Gipstein - Saratoga CA
Wayne M. Moreau - Wappingers Falls NY
Omar U. Need - San Jose CA

International Business Machines Corporation - Armonk NY

B05D 306
G03C 500

427 43

A positive resist image is produced by exposure of a layer of non-crosslinked polymeric material to high energy radiation in a predetermined pattern, the polymeric material containing alkyl methacrylate units and polymerized units of certain other ethylenically unsaturated monomers, followed by removal of the electron degraded material from the exposed areas.

39859150, Oct 12, 1976

Dec 20, 1974

5/534542

Edward Gipstein - Saratoga CA
Wayne M. Moreau - Wappingers Falls NY
Omar U. Need - San Jose CA

International Business Machines Corporation - Armonk NY

B05D 306

427 43

Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10. 5 to 12% nitrogen.

54225710, Jun 6, 1995

Feb 8, 1993

8/014981

Bruce A. Gurney - Santa Clara CA
David E. Heim - Redwood City CA
Haralambos Lefakis - San Jose CA
Omar U. Need - San Jose CA
Virgil S. Speriosu - San Jose CA
Dennis R. Wilhoit - Morgan Hill CA

International Business Machines Corporation - Armonk NY

G01R 3302
H01L 4308

324252

A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with one of the ferromagnetic layers, referred to as a filter layers to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.

39610993, Jun 1, 1976

Sep 26, 1974

5/509593

Edward Gipstein - Saratoga CA
Wayne M. Moreau - Wappingers Falls NY
Omar U. Need - San Jose CA

International Business Machines Corporation - Armonk NY

B05D 306

427 43

Electron beam positive resists which are sensitive to electron beam radiation and simultaneously thermally stable are prepared using polycarbonates.

54083770, Apr 18, 1995

Oct 15, 1993

8/138170

Bruce A. Gurney - Santa Clara CA
Haralambos Lefakis - San Jose CA
Omar U. Need - San Jose CA
Stuart S. P. Parkin - San Jose CA
Virgil S. Speriosu - San Jose CA
Dennis R. Wilhoit - Morgan Hill CA

International Business Machines Corporation - Armonk NY

G11B 5127
G11B 533

360113

A magnetic recording data storage system of high recording density is made possible by an improved magnetoresistive sensor. The sensor has a ferromagnetic sensing layer that is a laminated layer of two ferromagnetic films antiferromagnetically coupled to one another and separated by an antiferromagnetically coupling film. By appropriate selection of the thickness of the nonmagnetic antiferromagnetically coupling film, the ferromagnetic films become antiferromagnetically coupled and their magnetizations rotate as a single rigid unit in the presence of the external magnetic field to be sensed. The ferromagnetic sensing layer can be used in conventional magnetoresistive sensors of the anisotropic magnetoresistive (AMR) type and in spin valve magnetoresistive (SVMR) sensors. In the spin valve sensor, the laminated ferromagnetic sensing layer serves as the free layer and is preferably formed of two films of nickel-iron (Ni-Fe) separated by a ruthenium (Ru) antiferromagnetically coupling film. Because the two ferromagnetic films have their moments aligned antiparallel, then, assuming the two films are made of the same material, by selecting the two films to have different thicknesses the effective free layer thickness can be reduced without significantly reducing the magnetoresistance.