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Olivier N Pierron

from Atlanta, GA
Age ~47
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Connected to:
Martin S Pierron, 42Robert D Pierron, 96Shawn D Pierron, 55Hannah L Pierrottie, 39Jimmy Pierrot, 50Yolette Pierrot, 71Carol S Piers, 64George E Piers, 81Alicia N Piersall, 37Gianluca Piersanti, 52

Olivier Pierron Phones & Addresses

  • Atlanta, GA
  • 1166 Morse Ave, Sunnyvale, CA 94089
  • 600 College Ave, State College, PA 16801

Work

Company: Georgia institute of technology Apr 2013 Position: Associate professor

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Penn State University 2002 to 2005 Specialities: Engineering

Skills

Thin Films • Fracture • Materials Science • Mems • Nanotechnology • Characterization • Fatigue • Mechanical Testing • Failure Analysis • Higher Education • Mechanical Engineering • Silicon • Nanofabrication • Microfabrication • Experimentation • Nanomaterials • Engineering • Sensors • Finite Element Analysis

Industries

Research

Resumes

Resumes

Olivier Pierron Photo 1

Associate Professor

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Location:
Atlanta, GA
Industry:
Research
Work:
Georgia Institute of Technology
Associate Professor
Georgia Institute of Technology May 2007 - Mar 2013
Assistant Professor
Qualcomm Aug 2005 - May 2007
Senior Engineer
Education:
Penn State University 2002 - 2005
Doctorates, Doctor of Philosophy, Engineering Penn State University 2000 - 2002
Master of Science, Masters, Engineering
Skills:
Thin Films
Fracture
Materials Science
Mems
Nanotechnology
Characterization
Fatigue
Mechanical Testing
Failure Analysis
Higher Education
Mechanical Engineering
Silicon
Nanofabrication
Microfabrication
Experimentation
Nanomaterials
Engineering
Sensors
Finite Element Analysis

Publications

Us Patents

System And Method For Measuring Residual Stress

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US Patent:
7423287, Sep 9, 2008
Filed:
Mar 23, 2007
Appl. No.:
11/690708
Inventors:
Gregory U'Ren - Berkeley CA, US
Olivier Pierron - Sunnyvale CA, US
Assignee:
Qualcomm Mems Technologies, Inc. - San Diego CA
International Classification:
H01L 23/58
H01L 21/66
G01R 31/28
US Classification:
257 48, 438 18, 29593
Abstract:
The invention comprises devices and methods for determining residual stress in MEMS devices such as interferometric modulators. In one example, a device measuring residual stress of a deposited conduct material includes a material used to form a MEMS device, and a plurality of disconnectable electrical paths, wherein said plurality of paths are configured to disconnect as a function of residual stress of the material. In another example, a method of measuring residual stress of a conductive deposited material includes monitoring a plurality of signals, each of said plurality of signals being associated with one of a plurality of test structures, said plurality of test structures each being configured to change the associated signal upon being subject to a predetermined amount of residual stress, sensing a change in said plurality of signals, and determining a residual stress level in said material based on the sensed change in the plurality of signals.
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Olivier N Pierron from Atlanta, GA, age ~47 Get Report