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Monti E Aklufi

from San Diego, CA
Age ~88
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Also known as:
Monti Traute Aklufi, Monit E Aklufi, Monte Aklufi, Monty Aklufi, Aklufi Monti, Monti I
Phone and address:
10258 Grayfox Dr, San Diego, CA 92131
(858) 578-4999
Related to:
Yunwei Cheng, 67Tom T E, 50Ming L Chiang, 60Luke Chiang, 85Chou Shihsun, 51
Connected to:
Jack A Akmakjian, 46Arif M Akmal, 40Ayesha Akmal, 49John Akmal, 69Kalan E Akmal, 46Omer F Akmal, 41Zohaib M Akmal, 36David A Akman, 41Laurel R Akman, 42Leyla Akman, 56

Monti Aklufi Phones & Addresses

  • 10258 Grayfox Dr, San Diego, CA 92131 (858) 578-4999 (858) 566-1364
  • Escanaba, MI
  • Palm Desert, CA
  • Riverside, CA
  • Brooklyn, NY
  • Stanford, CA
  • 10258 Grayfox Dr, San Diego, CA 92131 (858) 578-4999

Work

Position: Protective Service Occupations

Publications

Us Patents

Micro-Electro-Mechanical Systems Resonant Optical Gyroscope

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US Patent:
6546798, Apr 15, 2003
Filed:
Jun 26, 2001
Appl. No.:
09/892301
Inventors:
Richard L. Waters - San Diego CA
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01P 300
US Classification:
7350401, 356460
Abstract:
A gyroscope is based upon the integration of an optical resonant cavity and a photodiode to detect minute perturbations due to angular forces. A Fabry-Perot cavity is created from two parallel semitransparent mirrors used in conjunction with a monochromatic light source. One mirror is fixed while the other is allowed to rotate with respect to the first mirror. A resonant cavity is thereby formed on either side of the axis. The gap between the mirrors is set so that light transmission through the mirrors is optimized. Rotation of the mirror from this position causes the distance between the mirrors to be altered and the light transmission on either side of the rotational axis to be change. Photodiodes on these sides sense this change as a change in photo-generated current, enabling the amount of change in rotation to be calculated. The photo-currents can be differentially amplified for sensitivity.

Differential Amplification For Micro-Electro-Mechanical Ultra-Sensitive Accelerometer

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US Patent:
6550330, Apr 22, 2003
Filed:
Jun 21, 2001
Appl. No.:
09/886293
Inventors:
Richard L. Waters - San Diego CA
Chris Hutchens - Stillwater OK
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01P 1500
US Classification:
7351426, 356454
Abstract:
An improvement to an optical accelerometer based upon the monolithic integration of a Fabry-Perot interferometer and a p n silicon photosensor includes using one or more pairs of optical accelerometers wherein each pair provides for greater accelerometer sensitivity than a single independent accelerometer, and allows for a reduction in common mode noise due to amplitude and phase difference variations of the utilized light source as well as supply voltage. The differential approach of the invention provides for the biasing of the optical accelerometers such that their output signals are 180 degrees out of phase with each other.

Micro-Electro-Mechanical Systems Ultra-Sensitive Accelerometer

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US Patent:
6581465, Jun 24, 2003
Filed:
Mar 14, 2001
Appl. No.:
09/808570
Inventors:
Richard L. Waters - San Diego CA
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01P 1508
US Classification:
7351426, 356506
Abstract:
An accelerometer is based upon the monolithic integration of a Fabry-Perot interferometer and a p n silicon photosensor. Transmission of light through a Fabry-Perot etalon is exponentially sensitive to small displacements in a movable mirror due to an applied accelerating force. The photosensor converts this displacement into an electrical signal as well as provides for additional amplification. Because the interferometer and photosensor are monolithically integrated on a silicon substrate, the combination is compact and has minimal parasitic elements, thereby reducing the accelerometers noise level and increasing its signal-to-noise ratio (SNR). The accelerometers sensitivity can be user-controlled by any one or a combination of factors: providing an electrostatic potential across the mirrors of the Fabry-Perot etalon hence selecting a desired gap therebetween; adjusting the power of the light projected to the photosensor; and pulsing the light at a selected frequency to minimize 1/f inherent system noise in the response of the accelerometer.

Micro-Electro-Mechanical Systems Ultra-Sensitive Accelerometer With Independent Sensitivity Adjustment

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US Patent:
6763718, Jul 20, 2004
Filed:
Sep 17, 2002
Appl. No.:
10/245617
Inventors:
Richard L. Waters - San Diego CA
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01P 1508
US Classification:
7351426, 356506
Abstract:
An accelerometer is based upon the monolithic integration of a Fabry-Perot interferometer and a p n silicon photosensor. Transmission of light through a Fabry-Perot interferometer cavity is exponentially sensitive to small displacements in a movable mirror due to an applied accelerating force. The photosensor converts this displacement into an electrical signal as well as provides for additional amplification. Because the interferometer and photosensor are monolithically integrated on a silicon substrate, the combination is compact and has minimal parasitic elements, thereby reducing the accelerometers noise level and increasing its signal-to-noise ratio (SNR). The accelerometers sensitivity can be user-controlled by any one or a combination of factors: adjusting the length between the mirrors of the Fabry-Perot cavity; adjusting the power of the light projected to the photosensor; and pulsing the light at a selected frequency to minimize 1/f inherent system noise in the response of the accelerometer.

Method Of Forming Thin Films On Substrates At Low Temperatures

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US Patent:
53993888, Mar 21, 1995
Filed:
Feb 28, 1994
Appl. No.:
8/207312
Inventors:
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington
International Classification:
B05D 306
US Classification:
427575
Abstract:
A method is provided for forming thin films, such as high temperature superconductors, on a surface of a substrate using pulsed microwaves to control substrate temperature. The method includes vaporizing a liquid source to form a series of vapor pulses, irradiating the vapor pulses and a makeup gas with pulsed microwaves, and exposing the surface of the substrate to the irradiated mixture to form a thin film on the surface. The microwaves may be pulsed to coincide with the arrival of the vapor pulses at the substrate, thus reducing the amount of material consumed and the amount of waste. Further, the plasma may be closely confined to the substrate with a dielectric waveguide to reduce the power required for irradiating the mixture and to prevent the formation of stray deposits on surfaces enclosing the substrate.

Semiconductor-Semiconductor Compound Insulator-Insulator Structures

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US Patent:
H9482, Aug 6, 1991
Filed:
Aug 17, 1990
Appl. No.:
7/574570
Inventors:
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
C30B 2900
H01L 21265
US Classification:
156600
Abstract:
A process for the interdisposition of a semiconductor compound by high dose oxygen ion implantation after a high quality single crystal semiconductor film has been formed on an insulator substrate. Specifically, in one embodiment, after the formation of a single crystal silicon semiconductor film on an insulator substrate of either sapphire or spinel, oxygen ion implantation is formed to create a silicon dioxide layer at the interface between the silicon semiconductor film and the insulator substrate in order to reduce the interface states and form a diffusion barrier between the semiconductor material and the electrical insulator substrate.

Method For Improving Crystalline Thin Films With A Contoured Beam Pulsed Laser

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US Patent:
61769223, Jan 23, 2001
Filed:
Oct 6, 1999
Appl. No.:
9/413707
Inventors:
Monti E. Aklufi - San Diego CA
Stephen D. Russell - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
C30B 106
US Classification:
117 4
Abstract:
A method is presented for crystallizing a thin film on a substrate by generating a beam of pulsed optical energy, countouring the intensity profile of the beam, and illuminating the thin film with the beam to crystallize the thin film into a single crystal lattice structure.

Chemical Etching Of Transformed Structures

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US Patent:
44500416, May 22, 1984
Filed:
Jun 21, 1982
Appl. No.:
6/390458
Inventors:
Monti E. Aklufi - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
C23F 102
B44C 122
C03C 1500
H01L 21306
US Classification:
156628
Abstract:
A maskless technique is disclosed for shaping semiconductor materials by ming areas that are selectively etchable with respect to the rest of the structure. In one embodiment of this invention, a body of amorphous material is subjected to radiation by a focused energy beam so as to convert a predetermined region of the amorphous material into a region of crystalline material. The converted region etches at a slower rate than the non-converted amorphous material. In a second embodiment of the present invention, a method of selectively etching a metal is disclosed which includes the step of subjecting a predetermined region of the metal to be impinged upon by a shaped ion beam so as to ion implant the predetermined region. A chemical etch is applied to the metal and to the ion implanted region of the metal and the ion implanted region etches at a slower rate than the portion of the metal outside the ion implanted region. In another embodiment of the present invention, a method of selectively etching a dielectric is disclosed which includes the step of subjecting a predetermined region of the dielectric to be impinged upon by a shaped ion beam so as to ion implant the predetermined region.
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Monti E Aklufi from San Diego, CA, age ~88 Get Report