US Patent:
20160181367, Jun 23, 2016
Inventors:
- Armonk NY, US
Murshed M. Chowdhury - Fremont CA, US
Aritra Dasgupta - Wappingers Falls NY, US
Mohammad Hasanuzzaman - Beacon NY, US
Shahrukh Akbar Khan - Danbury CT, US
Joyeeta Nag - Wappingers Falls NY, US
International Classification:
H01L 29/10
H01L 21/265
H01L 29/78
H01L 29/66
Abstract:
A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.
