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Minxu Li

from Beaverton, OR
Age ~60
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Also known as:
Min Xu Li, Li K Minxu
Phone and address:
415 NW Kotrik Pl, Beaverton, OR 97006
Related to:
Jerry K Jalalon, 67Kyoko Ito, 60Amy Li, 30Yumi Li, 32
Connected to:
Ace Li, 63Agnes P Li, 62Ai C LiAiguo Li, 59Ang J Li, 57Anne M Li, 79Anran Li, 35Anya Li, 27Ao L Li, 40Baoguo Li, 67

Minxu Li Phones & Addresses

  • 415 NW Kotrik Pl, Beaverton, OR 97006
  • Hillsboro, OR
  • 5777 Tonopah Ct, Simi Valley, CA 93063
  • 2151 Spruce Dr, Hollister, CA 95023
  • San Jose, CA
  • Williamsburg, VA
  • Gaithersburg, MD
  • Ventura, CA

Work

Position: Sales Occupations

Education

Degree: Associate degree or higher

Resumes

Resumes

Minxu Li Photo 1

Director Of Engineering And Manufacturing At Innolight Technology

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Position:
Director of Engineering and Manufacturing at InnoLight Technology
Location:
China
Industry:
Electrical/Electronic Manufacturing
Work:
InnoLight Technology - Suzhou, Jiangsu, China since Sep 2011
Director of Engineering and Manufacturing
InnoLight Technology - Suzhou, Jiangsu, China Sep 2009 - Aug 2011
Director of QA
Opnext Jun 2007 - Aug 2009
NPI Engineer
Intel Corporation Dec 2005 - Sep 2006
Sr. Process Engineer
Source Photonics - Taiwan Mar 2003 - Nov 2005
Director of Transceiver Division Taiwan
Education:
College of William and Mary Sep 1989 - May 1994
Ph.D., Applied Physics Peking University Sep 1985 - Jun 1988
Master Degree Candidate, Physics Jilin University 1981 - 1985
Bachelor, Physics
Skills:
Six Sigma
Manufacturing
SPC
Lean Manufacturing
Semiconductors
Design of Experiments
Root Cause Analysis
Engineering
Process Improvement
Operations Management
Project Management
Product Engineering
Minxu Li Photo 2

Minxu Li

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Publications

Us Patents

Wafer Produced By Method Of Quality Control For Chemical Vapor Deposition

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US Patent:
20010000865, May 10, 2001
Filed:
Dec 7, 2000
Appl. No.:
09/732473
Inventors:
Kevin Gaughen - Los Gatos CA, US
Ching-Wei Chen - Sunnyvale CA, US
Minxu Li - Hollister CA, US
Assignee:
NATIONAL SEMICONDUCTOR CORPORATION
International Classification:
H01L021/31
C23C014/00
US Classification:
118/050100, 438/785000
Abstract:
A residual gas analyzer can be used as a deposition rate monitor. A deposition rate monitor is based on the detection of growth precursors and reaction byproducts of the thin film growth in deposition equipment such as chemical vapor deposition (CVD) systems. The growth precursors and byproducts are identified and quantified by using a residual gas analyzer (RGA). The ion current from gas species associated with the growth rate is then empirically correlated with the thickness of the film. The specific chemical species detected by the RGA is unique to the material that is deposited and to the technique in which the material is deposited.

Method Of Quality Control For Chemical Vapor Deposition

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US Patent:
62107453, Apr 3, 2001
Filed:
Jul 8, 1999
Appl. No.:
9/349556
Inventors:
Kevin Gaughan - Los Gatos CA
Ching-Wei Chen - Sunnyvale CA
Minxu Li - Hollister CA
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
C23C 1652
US Classification:
427 8
Abstract:
A residual gas analyzer can be used as a deposition rate monitor. A deposition rate monitor is based on the detection of growth precursors and reaction byproducts of the thin film growth in deposition equipment such as chemical vapor deposition (CVD) systems. The growth precursors and byproducts are identified and quantified by using a residual gas analyzer (RGA). The ion current from gas species associated with the growth rate is then empirically correlated with the thickness of the film. The specific chemical species detected by the RGA is unique to the material that is deposited and to the technique in which the material is deposited.
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Minxu Li from Beaverton, OR, age ~60 Get Report