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Minhua Li

from Sandy, UT
Age ~67
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Also known as:
Min Huali
Phone and address:
9625 S Glass Slipper Rd, Sandy, UT 84092
Related to:
Wei Zou, 63Rocio A Mendoza, 35Yingru Li, 48Yanhong LiJing Li, 65Li Changzheng
Connected to:
Ace Li, 63Agnes P Li, 62Ai C LiAiguo Li, 59Ang J Li, 57Anne M Li, 79Anran Li, 35Anya Li, 27Ao L Li, 40Baoguo Li, 67

Minhua Li Phones & Addresses

  • 9625 S Glass Slipper Rd, Sandy, UT 84092
  • Salt Lake City, UT
  • 9828 Dolomite Ln, Sandy, UT 84094

Publications

Us Patents

Selective Flotation Of Phosphate Minerals With Hydroxamate Collectors

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US Patent:
6341697, Jan 29, 2002
Filed:
Oct 30, 2000
Appl. No.:
09/699967
Inventors:
Jan D. Miller - Salt Lake City UT
Xuming Wang - Salt Lake City UT
Minhua Li - Salt Lake City UT
Assignee:
University of Utah Research Foundation - Salt Lake City UT
International Classification:
B03D 101
US Classification:
209166, 252 61
Abstract:
A method is disclosed for separating phosphate minerals from a mineral mixture, particularly from high-dolomite containing phosphate ores. The method involves conditioning the mineral mixture by contacting in an aqueous in environment with a collector in an amount sufficient for promoting flotation of phosphate minerals. The collector is a hydroxamate compound of the formula; wherein R is generally hydrophobic and chosen such that the collector has solubility or dispersion properties it can be distributed in the mineral mixture, typically an alkyl, aryl, or alkylaryl group having 6 to 18 carbon atoms. M is a cation, typically hydrogen, an alkali metal or an alkaline earth metal. Preferably, the collector also comprises an alcohol of the formula, wherein Râ is generally hydrophobic and chosen such that the collector has solubility or dispersion properties so that it can be distributed in the mineral mixture, typically an alkyl, aryl, or alkylaryl group having 6 to 18 carbon atoms.

Purification Of Trona Ores By Conditioning With An Oil-In-Water Emulsion

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US Patent:
7517509, Apr 14, 2009
Filed:
Mar 30, 2005
Appl. No.:
11/094326
Inventors:
J. D. Miller - Salt Lake City UT, US
Xuming Wang - Salt Lake City UT, US
Minhua Li - Salt Lake City UT, US
Assignee:
University of Utah Research Foundation - Salt Lake City UT
International Classification:
C01D 11/00
US Classification:
4232062, 23302 T
Abstract:
The present invention is a trona concentrate and a process for floating gangue material from trona ore that comprises forming an emulsion, conditioning the trona ore at a high solids content in a saturated trona suspension, and then floating and removing the gangue material. The process for separating trona from gangue materials in trona ore can include emulsifying an oil in an aqueous solution to form an oil-in-water emulsion. A saturated trona suspension having a high solids content can also be formed having trona of a desired particle size. The undissolved trona in the saturated suspension can be conditioned by mixing the saturated suspension and the oil-in-water emulsion to form a conditioning solid suspension of trona and gangue material. A gas can be injected through the conditioning solid suspension to float the gangue material. Thus, the floated gangue material can be readily separated from the trona to form a purified trona concentrate without requirements of additional heat or other expensive processing steps.

Method For Bonding A Semiconductor Substrate To A Metal Substrate

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US Patent:
7635635, Dec 22, 2009
Filed:
Apr 6, 2006
Appl. No.:
11/400731
Inventors:
Hamza Yilmaz - Saratoga CA, US
Qi Wang - Sandy UT, US
Minhua Li - Sandy UT, US
Chung-Lin Wu - San Jose CA, US
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 21/46
US Classification:
438455, 438406, 438464, 257E21088, 257E2151
Abstract:
A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.

Semiconductor Structures Formed On Substrates And Methods Of Manufacturing The Same

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US Patent:
7635637, Dec 22, 2009
Filed:
Jul 25, 2005
Appl. No.:
11/189163
Inventors:
Qi Wang - West Jordan UT, US
Minhua Li - Sandy UT, US
Jeffrey H. Rice - South Jordan UT, US
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 21/30
H01L 21/46
US Classification:
438458, 438517, 257E21568
Abstract:
Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer.

Semiconductor Die Packages Using Thin Dies And Metal Substrates

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US Patent:
7768075, Aug 3, 2010
Filed:
Apr 6, 2006
Appl. No.:
11/400729
Inventors:
Hamza Yilmaz - Saratoga CA, US
Steven Sapp - Felton CA, US
Qi Wang - Sandy UT, US
Minhua Li - Sandy UT, US
James J. Murphy - South Jordan UT, US
John Robert Diroll - Sandy UT, US
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 27/088
US Classification:
257401, 257329, 257335, 257341, 257691, 257723, 257738, 257772, 257E27014, 257E27057, 257E29027
Abstract:
A semiconductor die package is disclosed. The semiconductor die package comprises a metal substrate, and a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture. The metal substrate is attached to the second surface. A plurality of conductive structures is on the semiconductor die, and includes at least one conductive structure disposed in the at least one aperture. Other conductive structures may be disposed on the first surface of the semiconductor die.

Method And Structure For Dividing A Substrate Into Individual Devices

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US Patent:
7951688, May 31, 2011
Filed:
Jul 17, 2008
Appl. No.:
12/174863
Inventors:
Minhua Li - Sandy UT, US
Qi Wang - Sandy UT, US
Gordon Sim - Sandy UT, US
Matthew Reynolds - Sandy UT, US
Suku Kim - South Jordan UT, US
James J. Murphy - South Jordan UT, US
Hamza Yilmaz - Saratoga CA, US
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 21/30
H01L 21/46
US Classification:
438458, 438110, 438118, 438459, 438462, 438464, 257E21214, 257E21237, 257E21599
Abstract:
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

Structure And Method For Forming Hybrid Substrate

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US Patent:
8039401, Oct 18, 2011
Filed:
Dec 10, 2008
Appl. No.:
12/332326
Inventors:
Qi Wang - Sandy UT, US
Joelle Sharp - Herriman UT, US
Minhua Li - Sandy UT, US
Hui Chen - South Jordan UT, US
Assignee:
Fairchild Semiconductor Corporation - So. Portland ME
International Classification:
H01L 21/30
H01L 21/46
H01L 21/20
H01L 21/36
H01L 21/311
US Classification:
438700, 438694, 438455, 438478, 257E21088, 257E21567, 257E21214, 257E21599
Abstract:
A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.

Semiconductor Device With (110)-Oriented Silicon

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US Patent:
8101500, Jan 24, 2012
Filed:
Jul 16, 2008
Appl. No.:
12/174030
Inventors:
Qi Wang - Sandy UT, US
Minhua Li - Sandy UT, US
Yuri Sokolov - Sandy UT, US
Assignee:
Fairchild Semiconductor Corporation - So. Portland ME
International Classification:
H01L 21/30
US Classification:
438458, 438212, 438455, 438517
Abstract:
A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.
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Minhua Li from Sandy, UT, age ~67 Get Report