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Mikhail W Belousov

from Boca Raton, FL
Age ~79

Mikhail Belousov Phones & Addresses

  • 1010 Marble Way, Boca Raton, FL 33432 (561) 419-8460
  • 16 Gulick Ln, Plainsboro, NJ 08536 (609) 799-4790 (609) 799-3260
  • 1107 Hunters Glen Dr, Plainsboro, NJ 08536 (609) 799-3260
  • 16 Gulick Ln, Plainsboro, NJ 08536 (609) 713-7771

Work

Position: Financial Professional

Education

Degree: Graduate or professional degree

Emails

Resumes

Resumes

Mikhail Belousov Photo 1

Senior Staff Scientist

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Location:
1010 Marble Way, Boca Raton, FL 33432
Industry:
Semiconductors
Work:
Veeco Instruments
Senior Staff Scientist
Skills:
Engineering Management
Design of Experiments
Failure Analysis
Nanotechnology
Optics
Characterization
Mikhail Belousov Photo 2

It Consulting

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Location:
Boca Raton, FL
Work:

It Consulting
Education:
Tomsk State University 2000 - 2005
Masters

Publications

Us Patents

Calibration Wafer And Method Of Calibrating In Situ Temperatures

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US Patent:
7452125, Nov 18, 2008
Filed:
Aug 21, 2007
Appl. No.:
11/894453
Inventors:
Boris Volf - Hightstown NJ, US
Mikhail Belousov - Plainsboro NJ, US
Alexander I. Gurary - Bridgewater NJ, US
Assignee:
Veeco Instruments Inc. - Woodbury NY
International Classification:
G01K 15/00
G01J 3/00
US Classification:
374 1, 374121
Abstract:
A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.

Method And Apparatus For Measuring The Curvature Of Reflective Surfaces

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US Patent:
7570368, Aug 4, 2009
Filed:
May 12, 2005
Appl. No.:
11/127834
Inventors:
Mikhail Belousov - Plainsboro NJ, US
Boris Volf - Hightstown NJ, US
Assignee:
Veeco Instruments Inc. - Plainview NY
International Classification:
G01B 11/24
US Classification:
356601
Abstract:
A method for monitoring the curvature of a surface of a body such as a semiconductor wafer () includes directing a beam of light along an impingement axis () onto the surface so that a beam of light () is reflected from the surface at a point of impingement. The position of the reflected beam () is detected in two dimensions (x,y). The body () is moved relative to the impingement axis () in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.

Apparatus And Method For Batch Non-Contact Material Characterization

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US Patent:
8022372, Sep 20, 2011
Filed:
Feb 12, 2009
Appl. No.:
12/370044
Inventors:
Dong Seung Lee - Bridgewater NJ, US
Mikhail Belousov - Plainsboro NJ, US
Eric A. Armour - Pennington NJ, US
William E. Quinn - Whitehouse Station NJ, US
Assignee:
Veeco Instruments Inc. - Plainview NY
International Classification:
G01N 21/64
US Classification:
2504581, 2504591, 438 7, 438 16
Abstract:
An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.

Apparatus And Method For Batch Non-Contact Material Characterization

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US Patent:
8198605, Jun 12, 2012
Filed:
Aug 12, 2011
Appl. No.:
13/208891
Inventors:
Dong Seung Lee - Bridgewater NJ, US
Mikhail Belousov - Plainsboro NJ, US
Eric A. Armour - Pennington NJ, US
William E. Quinn - Whitehouse Station NJ, US
Assignee:
Veeco Instruments Inc. - Plainview NY
International Classification:
G01N 21/64
US Classification:
2504581, 2504591, 438 7, 438 16
Abstract:
An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.

Chemical Vapor Deposition Flow Inlet Elements And Methods

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US Patent:
8303713, Nov 6, 2012
Filed:
Dec 4, 2009
Appl. No.:
12/631079
Inventors:
Mikhail Belousov - Plainsboro NJ, US
Bojan Mitrovic - Somerset NJ, US
Keng Moy - Basking Ridge NJ, US
Assignee:
Veeco Instruments Inc. - Plainview NY
International Classification:
C23C 16/00
C23C 16/455
H01L 21/306
US Classification:
118715, 15634533, 15634534
Abstract:
A flow inlet element () for a chemical vapor deposition reactor () is formed from a plurality of elongated tubular elements () extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier () rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane () extending through the axis.

Apparatus And Method For Batch Non-Contact Material Characterization

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US Patent:
8441653, May 14, 2013
Filed:
Jun 13, 2012
Appl. No.:
13/495160
Inventors:
Dong Seung Lee - Bridgewater NJ, US
Mikhail Belousov - Plainsboro NJ, US
Eric A. Armour - Pennington NJ, US
William E. Quinn - Whitehouse Station NJ, US
Assignee:
Veeco Instruments Inc. - Plainview NY
International Classification:
G01B 11/24
US Classification:
356614, 356400, 2504581, 2504591, 118686, 414730
Abstract:
An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.

Chemical Vapor Deposition Flow Inlet Elements And Methods

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US Patent:
8636847, Jan 28, 2014
Filed:
Sep 7, 2012
Appl. No.:
13/606130
Inventors:
Mikhail Belousov - Plainsboro NJ, US
Bojan Mitrovic - Somerset NJ, US
Keng Moy - Basking Ridge NJ, US
Assignee:
Veeco Instruments Inc. - Plainview NY
International Classification:
C23C 16/00
C23C 16/455
US Classification:
118715, 15634533, 15634534, 239589
Abstract:
A flow inlet element () for a chemical vapor deposition reactor () is formed from a plurality of elongated tubular elements () extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier () rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane () extending through the axis.

Calibration Wafer And Method Of Calibrating In Situ Temperatures

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US Patent:
20060171442, Aug 3, 2006
Filed:
Jan 31, 2005
Appl. No.:
11/046741
Inventors:
Boris Volf - Plainsboro NJ, US
Mikhail Belousov - Plainsboro NJ, US
Alexander Gurary - Bridgewater NJ, US
Assignee:
Veeco Instruments Inc. - Woodbury NY
International Classification:
G01K 13/00
G01K 15/00
G01K 1/08
US Classification:
374001000, 374141000
Abstract:
A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
Mikhail W Belousov from Boca Raton, FL, age ~79 Get Report