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Maxime Darnon

from White Plains, NY
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Connected to:
Andrea D Daro, 71Lorraine Daro, 63Bernadette S Daroca, 60Charles P Daroca, 65Heidi S Daroca, 45Matthew C Daroca, 34Debora Darocha, 46Elizabeth M Darocha, 56Karen A Darocha, 53Abigail C Daroci, 40

Maxime Darnon Phones & Addresses

  • White Plains, NY

Publications

Us Patents

Method For Air Gap Interconnect Integration Using Photo-Patternable Low K Material

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US Patent:
8241992, Aug 14, 2012
Filed:
May 10, 2010
Appl. No.:
12/776885
Inventors:
Lawrence A. Clevenger - Lagrangeville NY, US
Maxime Darnon - White Plains NY, US
Qinghuang Lin - Yorktown Heights NY, US
Anthony D. Lisi - Poughkeepsie NY, US
Satyanarayana V. Nitta - Poughquag NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/76
H01L 21/4763
H01L 21/44
US Classification:
438421, 438411, 438422, 438618, 438619, 438636, 438638, 438669, 438670, 438671, 438672, 438673, 438674, 438675
Abstract:
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

Interconnect Structure Fabricated Without Dry Plasma Etch Processing

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US Patent:
8298937, Oct 30, 2012
Filed:
Jun 12, 2009
Appl. No.:
12/483588
Inventors:
Maxime Darnon - Yorktown Heights NY, US
Jeffrey P. Gambino - Essex Junction VT, US
Elbert E. Huang - Yorktown Heights NY, US
Qinghuang Lin - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/44
US Classification:
438652, 257E21584
Abstract:
An interconnect structure within a microelectronic structure and a method for fabricating the interconnect structure within the microelectronic structure use a developable bottom anti-reflective coating layer and at least one imageable inter-level dielectric layer located thereupon over a substrate that includes a base dielectric layer and a first conductor layer located and formed embedded within the base dielectric layer. Incident to use of the developable bottom anti-reflective coating layer and the at least one imageable inter-level dielectric layer, an aperture, such as but not limited to a dual damascene aperture, may be formed through the at least one imageable inter-level dielectric layer and the developable anti-reflective coating layer to expose a capping layer located and formed upon the first conductor layer, absent use of a dry plasma etch method when forming the interconnect structure within the microelectronic structure.

Selective Etch Back Process For Carbon Nanotubes Intergration

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US Patent:
8449781, May 28, 2013
Filed:
Jun 22, 2010
Appl. No.:
12/820870
Inventors:
Maxime Darnon - Yorktown Heights NY, US
Gerald W. Gibson - Yorktown Heights NY, US
Pratik P. Joshi - Yorktown Heights NY, US
Ryan M. Martin - Yorktown Heights NY, US
Ying Zhang - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 37/00
C03C 25/68
US Classification:
216 7, 216 56
Abstract:
The present disclosure relates to a method for selectively etching-back a polymer matrix to expose tips of carbon nanotubes comprising:.

Method Of Patterning Photosensitive Material On A Substrate Containing A Latent Acid Generator

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US Patent:
8475667, Jul 2, 2013
Filed:
Jun 22, 2010
Appl. No.:
12/820904
Inventors:
Maxime Darnon - Yorktown Heights NY, US
Pratik P. Joshi - Yorktown Heights NY, US
Qinghuang Lin - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01B 13/00
US Classification:
216 13, 216 81
Abstract:
The present disclosure relates to a method of patterning a photosensitive material on a polymeric fill matrix comprising at least one latent photoacid generator; and a structure prepared according to said method. The method comprises:.

Air Gap-Containing Interconnect Structure Having Photo-Patternable Low K Material

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US Patent:
8629561, Jan 14, 2014
Filed:
Jul 3, 2012
Appl. No.:
13/540931
Inventors:
Lawrence A. Clevenger - Lagrangeville NY, US
Maxime Darnon - White Plains NY, US
Qinghuang Lin - Yorktown Heights NY, US
Anthony D. Lisi - Poughkeepsie NY, US
Satyanarayana V. Nitta - Poughquag NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/48
H01L 23/52
H01L 29/40
H01L 21/70
US Classification:
257758, 257522, 257741, 257750, 257751, 257757, 257760, 257770, 257E23142, 257E23145, 257E21573, 257E21581
Abstract:
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

Method For Reversing Tone Of Patterns On Integrated Circuit And Patterning Sub-Lithography Trenches

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US Patent:
20110020753, Jan 27, 2011
Filed:
Jul 27, 2009
Appl. No.:
12/510001
Inventors:
Lawrence A. Clevenger - Armonk NY, US
Maxime Darnon - Armonk NY, US
Anthony D. Lisi - Armonk NY, US
Satya V. Nitta - Armonk NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G03F 7/20
US Classification:
430313
Abstract:
A method for reversing the tone of a lithographic image on a substrate comprises depositing a modifiable material on a substrate; applying a photolithographic material on the modifiable material: defining a removable patterned area in the photolithopgraphic material by photolithograpic means; removing the patterned area to produce an exposed region in the modifiable material that substantially conforms to the patterned area; producing a reacted modifiable material by increasing the etch resistance of the modifable material substantially throughout the exposed region so that the etch resistance of the exposed region comprises a region that substantially conforms to the exposed region; and removing the photoresist and the modifiable material to leave the reacted modifiable material and substrate.

Photovoltaic Module With A Controllable Infrared Protection Layer

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US Patent:
20110100420, May 5, 2011
Filed:
Sep 21, 2010
Appl. No.:
12/887156
Inventors:
Lawrence A. Clevenger - Hopewell Junction NY, US
Timothy J. Dalton - Yorktown Heights NY, US
Maxime Darnon - White Plains NY, US
Rainer Krause - Mainz, DE
Gerd Pfeiffer - Hopewell Junction NY, US
Kevin Prettyman - Hopewell Junction NY, US
Carl J. Radens - Hopewell Junction NY, US
Brian C. Sapp - Hopewell Junction NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 31/052
US Classification:
136246
Abstract:
An apparatus, system, and method are disclosed for a photovoltaic module, the photovoltaic module comprising a plurality of photovoltaic cells, a controllable infrared protection layer, and a protection switching means. The controllable infrared protection layer is for reducing the infrared radiation absorbed by the photovoltaic module, where the controllable infrared protection layer has a first state and a second state. When the infrared protection layer is in the first state the transmission of infrared radiation to the photovoltaic cells is higher than when the infrared protection layer is in the second state. The protection switching means is for switching the controllable infrared protection layer between the first state and the second state.

Structures And Methods For Air Gap Integration

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US Patent:
20110260326, Oct 27, 2011
Filed:
Apr 27, 2010
Appl. No.:
12/768267
Inventors:
Lawrence A. Clevenger - Lagrangeville NY, US
Maxime Darnon - White Plains NY, US
Qinghuang Lin - Yorktown Heights NY, US
Anthony D. Lisi - Poughkeepsie NY, US
Satyanarayana V. Nitta - Poughquag NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/48
H01L 21/768
US Classification:
257770, 257741, 257774, 438703, 257E23011, 257E21581
Abstract:
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps of different depths are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.
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Maxime Darnon from White Plains, NY Get Report