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Martin H Ettenberg

from Princeton, NJ
Age ~55
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Also known as:
Martin Living Trus Ettenberg, Martin Felecia Ettenberg, Marolyn R Ettenberg, Marti Ettenberg, Ettenberg Harris Martin, Tenberg T Martin, Martin G
Phone and address:
590 Lake Dr, Princeton, NJ 08540
(609) 921-2679
Related to:
Matthew J Mcginn, 67Martin Kumer, 51Anne Martin, 87Darlene Martin, 48Anne Mccorry, 80Ann P Martin, 53
Connected to:
Barry J Ettenger, 75Diana G Ettenson, 77Alice D Etter, 77Amanda L Etter, 43Billie C Etter, 95Brett Etter, 45Claire Etter, 32Edwin R Etter, 93Geoffrey A Etter, 37Janice L Etter, 82

Martin Ettenberg Phones & Addresses

  • 590 Lake Dr, Princeton Township, NJ 08540 (609) 921-2679
  • Princeton, NJ
  • New York, NY
  • Princeton Junction, NJ
  • New Brunswick, NJ
  • 1904 Jefferson Park Ave, Charlottesville, VA 22903 (434) 979-9098

Work

Company: Mheconsult Jan 2012 to Aug 2014 Position: Consultant

Education

School / High School: University of Virginia 1992 to 1997 Specialities: Materials Science

Skills

Semiconductors • Sensors • Product Development • Program Management • R&D • Product Management • New Business Development • Product Marketing • Manufacturing • Start Ups • Cross Functional Team Leadership • Engineering Management • Ir • Digital Imaging • Imaging • Technology Development • Product Lifecycle Management

Industries

Semiconductors

Resumes

Resumes

Martin Ettenberg Photo 1

Chief Executive Officer At Princeton Infrared Technologies, Inc

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Location:
Princeton, NJ
Industry:
Semiconductors
Work:
Mheconsult Jan 2012 - Aug 2014
Consultant
Princeton Infrared Technologies Jan 2012 - Aug 2014
Chief Executive Officer at Princeton Infrared Technologies, Inc
Princeton Power Systems Jan 2012 - Jul 2012
Consultant
Goodrich Aug 2004 - 2011
Director of Business Development
Sensors Unlimited Jan 2008 - Dec 2009
Director of Research and Development
Education:
University of Virginia 1992 - 1997
Cornell University 1988 - 1992
Bachelors, Bachelor of Science, Materials Science Freehold Township High School
Skills:
Semiconductors
Sensors
Product Development
Program Management
R&D
Product Management
New Business Development
Product Marketing
Manufacturing
Start Ups
Cross Functional Team Leadership
Engineering Management
Ir
Digital Imaging
Imaging
Technology Development
Product Lifecycle Management

Business Records

Name / Title
Company / Classification
Phones & Addresses
Martin Ettenberg
President
Shoptrax Inc
Mfg Semiconductors/Related Devices · Semiconductors and Related Devices, Nsk
590 Lk Dr, Princeton, NJ 08540
Martin Ettenberg
Principal
Mheconsult LLC
Nonclassifiable Establishments
590 Lk Dr, Princeton, NJ 08540

Publications

Us Patents

Multicolor Detectors And Applications Thereof

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US Patent:
8399820, Mar 19, 2013
Filed:
Jun 23, 2009
Appl. No.:
12/489871
Inventors:
John Trezza - Manalapan NJ, US
Martin Ettenberg - Princeton NJ, US
Assignee:
Sensors Unlimited, Inc. - Princeton NJ
International Classification:
H01L 31/00
H01L 27/00
H01L 29/66
H01J 40/14
H04N 9/04
US Classification:
2502141, 2502081, 250214 R, 257343, 257440
Abstract:
In one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention provide a first photosensitive element comprising at least one accessway extending through the element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a second photosensitive element.

Multicolor Detectors And Applications Thereof

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US Patent:
20130183788, Jul 18, 2013
Filed:
Mar 5, 2013
Appl. No.:
13/785808
Inventors:
Sensors Unlimited, Inc. - Princeton NJ, US
Martin Ettenberg - Princeton NJ, US
Assignee:
Sensors Unlimited, Inc. - Princeton NJ
International Classification:
H01L 31/02
US Classification:
438 66
Abstract:
In one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention provide a first photosensitive element comprising at least one accessway extending through the element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a second photosensitive element.

Reduced Dark Current Pin Photo Diodes Using Intentional Doping

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US Patent:
6573581, Jun 3, 2003
Filed:
Feb 7, 2001
Appl. No.:
09/762487
Inventors:
Allan Richard Sugg - Langhorne PA
Michael John Lange - Yardley PA
Martin Harris Ettenberg - Princeton NJ
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L 2978
US Classification:
257451, 257458
Abstract:
In a semiconductor p-i-n photodiode an undoped absorption region ( ) is epitaxially grown between two highly doped regions ( ). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap ( ) doping (nË2. 5-6Ã10 /cm ), and nominally undoped (not intentionally doped, nË1Ã10 -5Ã10 /cm ) InGaAs absorption regions ( ). The shunt resistances of p-i-n photodiodes according to the present invention with intentional doping between nË5Ã10 /cm and 1Ã10 /cm , in the InGaAs absorption region ( ) are significantly increased over that of a standard structure (non-intentionally doped).

Low Noise Ingaas Photodiode Array

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US Patent:
20180122851, May 3, 2018
Filed:
Dec 19, 2017
Appl. No.:
15/846556
Inventors:
- Monmouth Junction NJ, US
Martin H. Ettenberg - Princeton NJ, US
Assignee:
Princeton Infrared Technologies, Inc. - Monmouth Junction NJ
International Classification:
H01L 27/146
H01L 31/18
H01L 31/105
H01L 31/0304
H01L 29/808
H01L 29/66
Abstract:
A photodiode pixel structure for imaging short wave infrared (SWIR) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (ROIC), for example, a silicon complementary metal-oxide-semiconductor (CMOS) circuit. The photodiode in each pixel is buried under the surface and does not directly contact the ROIC amplification circuit. Disconnecting the photodiode from the ROIC amplification circuit enables low dark current as well as double correlated sampling in the pixel.

Low Noise Ingaas Photodiode Array

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US Patent:
20160218139, Jul 28, 2016
Filed:
Sep 25, 2014
Appl. No.:
15/025072
Inventors:
- Monmouth Junction NJ, US
Martin H. Ettenberg - Princeton NJ, US
International Classification:
H01L 27/146
H01L 29/808
H01L 31/0304
H01L 31/105
H01L 31/18
H01L 29/66
Abstract:
A photodiode pixel structure for imaging short wave infrared (SWIR) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (ROIC), for example, a silicon complementary metal-oxide-semiconductor (CMOS) circuit. The photodiode in each pixel is buried under the surface and does not directly contact the ROIC amplification circuit. Charge is transferred form the detector using a junction field effect transistor (JFET) in each pixel. Disconnecting the photodiode from the ROIC amplification circuit enables low dark current as well as double correlated sampling in the pixel.
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Martin H Ettenberg from Princeton, NJ, age ~55 Get Report