Manoj Bikumandla

8569700, Oct 29, 2013

Mar 6, 2012

13/413456

Manoj Bikumandla - San Jose CA, US

OmniVision Technologies, Inc. - Santa Clara CA

G01J 5/02

250349

An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

8642938, Feb 4, 2014

Jan 13, 2012

13/350609

Manoj Bikumandla - San Jose CA, US
Sasidhar Saladi - Santa Clara CA, US

OmniVision Technologies, Inc. - Santa Clara CA

H01L 27/00
G01C 3/00
G01C 3/08

2502081, 356 3, 356 304

A time of flight pixel includes a photodiode that accumulates charge in response to light incident upon the photodiode. A first transfer transistor is couple between the photodiode and a first charge storage device to selectively transfer charge to the first charge storage device from the photodiode. A second transfer transistor coupled between the photodiode and a second charge storage device to selectively transfer charge to the second charge storage device from the photodiode. An enable transistor is coupled between the first charge storage device and a readout node coupled to the second charge storage device to selectively couple the first charge storage device to the readout node. An amplifier transistor having a gate is also coupled to a readout node.

20120032235, Feb 9, 2012

Aug 9, 2010

12/853160

Manoj Bikumandla - San Jose CA, US

H01L 27/092

257253, 257E27062

A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

20130048831, Feb 28, 2013

Aug 30, 2011

13/221736

Manoj Bikumandla - San Jose CA, US

OMNIVISION TECHNOLOGIES, INC. - Santa Clara CA

H01L 27/146

2502081, 250214 P

A method of operating an image sensor includes adjusting a capacitance coupled to a circuit node within a pixel cell. The circuit node is coupled to selectively receive an image charge acquired by a photo-sensor of the pixel cell. A conversion gain is selected from multiple conversion gains for the pixel cell by adjusting the capacitance. A voltage level from multiple voltage levels is selected for use as a reset signal when the reset signal is asserted. The reset signal controls resetting of the circuit node during operation of the pixel cell. The voltage level is selected dependent upon which of the multiple conversion gains is selected by adjusting the capacitance. The reset signal is asserted to reset a voltage at the circuit node.

20130075607, Mar 28, 2013

Sep 22, 2011

13/241032

MANOJ BIKUMANDLA - San Jose CA, US
Dominic Massetti - San Jose CA, US

H01L 27/146
H01L 31/18

250332, 2502081, 438 65, 257E31127

An image sensor of an aspect includes a first photodetector array and a second photodetector array. The second photodetector array is coupled under the first photodetector array. Photodetectors of the second photodetector array are coupled under corresponding photodetectors of the first photodetector array. The image sensor includes a thickness of a photocarrier generation material optically coupled between the corresponding photodetectors of the first and second arrays. Other image sensors, methods of making the image sensors, methods of using the image sensors, and color filter patterns for such image sensors are also disclosed.

20130092982, Apr 18, 2013

Oct 13, 2011

13/273026

Gang Chen - San Jose CA, US
Hsin-Chih Tai - San Jose CA, US
Duli Mao - Sunnyvale CA, US
Manoj Bikumandla - San Jose CA, US
Wei Zheng - Los Gatos CA, US
Yin Qian - Milpitas CA, US
Zhibin Xiong - Santa Clara CA, US
Vincent Venezia - Los Gatos CA, US
Howard E. Rhodes - San Martin CA, US

OMNIVISION TECHNOLOGIES, INC. - Santa Clara CA

H01L 27/148
H01L 31/18
H01L 31/101

257223, 257222, 438 87, 257E31054, 257E27162

Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

20130140432, Jun 6, 2013

Dec 1, 2011

13/308961

Manoj Bikumandla - San Jose CA, US

OMNIVISION TECHNOLOGIES, INC. - Santa Clara CA

H01L 27/146
H01L 31/18
H01L 31/0224
H01L 31/0232

2502081, 257432, 438 69, 438 70, 257E31127, 257E31124, 257E31001

Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed.

20130307093, Nov 21, 2013

Jul 24, 2013

13/950116

Manoj Bikumandla - San Jose CA, US

OMNIVISION TECHNOLOGIES, INC - Santa Clara CA

H01L 27/00

257414

A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.