Lonny L Berg

6392922, May 21, 2002

Aug 14, 2000

09/638419

Harry Liu - Plymouth MN
Lonny Berg - Elk River MN
William L. Larson - Eden Prairie MN
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Joel Drewes - Minnetonka MN

Micron Technology, Inc. - Boise ID

H01L 2982

365158, 257421, 365173

A passivated magneto-resistive bit structure is disclosed in which surfaces subject to oxidation or corrosion are protected. In one embodiment a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

6623987, Sep 23, 2003

Jan 24, 2002

10/057162

Harry Liu - Plymouth MN
Lonny Berg - Elk River MN
William L. Larson - Eden Prairie MN
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Joel Drewes - Minnetonka MN

Micron Technology, Inc. - Boise ID

G11C 1115

438 3, 365158

A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

6717194, Apr 6, 2004

Oct 30, 2001

09/999684

Harry Liu - Plymouth MN
William Larson - Eden Prairie MN
Lonny Berg - Elk River MN
Theodore Zhu - Maple Grove MN
Shaoping Li - Plymouth MN
Romney R. Katti - Maple Grove MN
Yong Lu - Plymouth MN
Anthony Arrott - Washington DC

Micron Technology, Inc. - Boise ID

H01L 31119

257295, 257421, 365173, 365158

A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

6806546, Oct 19, 2004

Feb 14, 2002

10/078234

Harry Liu - Plymouth MN
Lonny Berg - Elk River MN
William L Larson - Eden Prairie MN
Shaoping Li - Naperville IL
Theodore Zhu - Maple Grove MN
Joel Drewes - Minnetonka MN

Micron Technology, Inc. - Boise ID

H01L 4300

257421, 365158, 365173

A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

6850057, Feb 1, 2005

Jul 19, 2001

09/908834

William F. Witcraft - Minneapolis MN, US
Lonny Berg - Elk River MN, US
Mae W. Ng - Edina MN, US
Tom Yeh - Arden Hills MN, US

Honeywell International, Inc. - Morristown NJ

G01R 3302

324252, 428692, 428682

A method of making a magnetorestrictive sensor involves the deposition of a magnetorestrictive strip over a substrate, the deposition of an insulating layer over the magnetorestrictive strip, the etching of barber pole windows through the insulating layer, the deposition of a conductive material over the insulating layer and into the barber windows, and the etching away of the conductive material between the barber pole windows so as to form barber poles. In this manner, the formation of the barber poles is controlled by the windows formed in the insulating layer.

6872997, Mar 29, 2005

Jan 26, 2004

10/765546

Harry Liu - Plymouth MN, US
William Larson - Eden Praire MN, US
Lonny Berg - Elk River MN, US
Theodore Zhu - Maple Grove MN, US
Shaoping Li - Plymouth MN, US
Romney R. Katti - Maple Grove MN, US
Yong Lu - Plymouth MN, US
Anthony Arrott - Washington DC, US

Micron Technology, Inc. - Boise ID

H01L031/119
G11C011/15

257295, 257421, 365173, 365158

A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

6914805, Jul 5, 2005

Aug 21, 2002

10/226623

William F. Witcraft - Minneapolis MN, US
Lonny Berg - Elk River MN, US
Alan Hurst - Anoka MN, US
William Vavra - Maple Plain MN, US
Mark Jenson - Zimmerman MN, US

Micron Technology, Inc. - Boise ID

G11C011/00

365158, 365 55, 365 57, 365 63, 365171

An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.

7029923, Apr 18, 2006

Dec 11, 2003

10/734663

Harry Liu - Plymouth MN, US
William Larson - Eden Prairie MN, US
Lonny Berg - Elk River MN, US
Theodore Zhu - Maple Grove MN, US
Shaoping Li - Plymouth MN, US
Romney R. Katti - Maple Grove MN, US
Yong Lu - Plymouth MN, US
Anthony Arrott - Washington DC, US

Micron Technology, Inc. - Boise ID

H01L 21/00

438 3, 438 48, 257295, 257421, 365158, 365173

A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.