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Lixin Wu

from Richardson, TX
Age ~58
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Also known as:
Xin Wu Li
Related to:
Christine J Wu, 36Eng Rd Lim, 60Hui C LiWan T Li, 40Dong Li, 38Shan Lin, 32Lin Xu, 56Ying Wu, 54
Connected to:
Ada M Wu, 61Alain W Wu, 56Angelina R Wu, 54Anshih Wu, 36Apple Y Wu, 59Artie K Wu, 71Beilei Wu, 42Caifen Wu, 56Carl G Wu, 44Carol S Wu, 97

Lixin Wu Phones & Addresses

  • Richardson, TX
  • Greenville, TX
  • Carrollton, TX
  • Justin, TX
  • Katy, TX
  • Commerce, TX
  • Mc Kinney, TX
  • Huffman, TX
  • Keller, TX
  • Crossroads, TX
  • Plano, TX
  • Hunt, TX

Resumes

Resumes

Lixin Wu Photo 1

Professor At Fjirsm, Chinese Academy Of Sciences

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Position:
Professor at FJIRSM, Chinese Academy of Sciences
Location:
Fuzhou, Fujian, China
Industry:
Research
Work:
FJIRSM, Chinese Academy of Sciences since Apr 2011
Professor
Education:
Beijing University of Chemical Technology
Lixin Wu Photo 2

Lixin Wu

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Lixin Wu Photo 3

Lixin Wu

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Lixin Wu
Officer, Director
OLISY LIMITED LIABILITY COMPANY
Fire/Casualty Insurance Carrier
PO Box 837202, Richardson, TX 75083
8309 Salado Spg Dr, Plano, TX 75025
Lixin Wu
Principal
Olisy Limited Liability Co
Fire/Casualty Insurance Carrier
PO Box 837202, Richardson, TX 75083

Publications

Us Patents

Method Of Forming Barrier Films For Copper Metallization Over Low Dielectric Constant Insulators In An Integrated Circuit

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US Patent:
6667231, Dec 23, 2003
Filed:
Jul 12, 2002
Appl. No.:
10/195006
Inventors:
Lixin Wu - Plano TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 214763
US Classification:
438628, 438622, 438677, 438679
Abstract:
An integrated circuit structure and method of making the same is disclosed, in which the adhesion of copper conductors ( ) to a low-dielectric constant insulating layer ( ) is improved. During the fabrication of the structure, exposed surfaces of the low-k insulating layers ( ), including the surfaces of these layers within contact, via, or trench openings, are exposed to nitrogen gas, preferably in a sputtering chamber. An optional plasma treatment of the insulating layers ( ) in the presence of nitrogen gas may also be performed. As a result, the surface portions of the insulating layers ( ) is made to be nitrogen-rich. A liner layer ( ) is then formed by reactive sputtering of tantalum nitride over the nitrogen-rich surfaces of the insulating layers ( ), followed by the sputtering of tantalum. Copper electrodes ( ) are then deposited into the openings in the corresponding insulating layers ( ) with improved adhesion resulting.

Semiconductor Device Manufactured Using An Electrochemical Deposition Process For Copper Interconnects

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US Patent:
20080111237, May 15, 2008
Filed:
Nov 14, 2006
Appl. No.:
11/559495
Inventors:
Montray Cantrell Leavy - McKinney TX, US
Jeffrey Alan West - Dallas TX, US
Kyle James McPherson - Allen TX, US
Richard Allen Faust - Dallas TX, US
Lixin Wu - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 23/52
H01L 21/4763
US Classification:
257741, 438618, 257E21575, 257E23141
Abstract:
A method of manufacturing a semiconductor device that comprises forming an insulating layer over a semiconductive substrate and forming a copper interconnect. Forming the interconnect includes etching an interconnect opening in the insulating layer and filling the opening with copper plating. Filling with copper plating includes using a first and second ECD. An electrolyte solution of the first and second ECD contains organic additives, and a current of the first ECD is greater than a current of the second ECD.

Fast Deposition On Spherical-Shaped Integrated Circuits In Non-Contact Cvd Process

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US Patent:
63035170, Oct 16, 2001
Filed:
Jul 27, 1999
Appl. No.:
9/361793
Inventors:
Changfeng Xia - Plano TX
Lixin Wu - Dallas TX
Assignee:
Ball Semiconductor, Inc. - Allen TX
International Classification:
C23C 1600
US Classification:
438758
Abstract:
An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where chemical precursors are added and the devices are further heated to a predefined temperature associated with the chemical precursors by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.
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Lixin Wu from Richardson, TX, age ~58 Get Report