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Lionel R Friedman

from Bradenton, FL
Age ~91
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Also known as:
Lonel R Friedman, Lionel R Freidman, Lionel Friendman
Phone and address:
589 Lakeside Dr, Bradenton, FL 34210
(413) 256-2374
Related to:
Paul D Friedman, 69Scott Friedman, 36Michael Friedman, 39Irene Friedman, 37
Connected to:
Ada V Friedman, 39Aharon Friedman, 64Alberto Friedmann, 70Alfred Friedmann, 110Alissa Friedman, 53Alon I Friedman, 57Arline G Friedman, 77Ashley D Friedman, 49Becca Friedman, 37Binyamin M Friedman, 51

Lionel Friedman Phones & Addresses

  • 589 Lakeside Dr, Bradenton, FL 34210 (413) 256-2374
  • 638 Woodlawn Dr, Bradenton, FL 34210 (941) 758-9703
  • Enfield, CT
  • 4 Eaton Ct, Amherst, MA 01002 (413) 256-2374 (413) 256-6221
  • 66 Pine St, Amherst, MA 01002 (413) 253-7763
  • Holden, MA
  • 4 Eaton Ct, Amherst, MA 01002

Work

Position: Service Occupations

Education

Degree: High school graduate or higher

Resumes

Resumes

Lionel Friedman Photo 1

Physicist

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Location:
Bradenton, FL
Industry:
Leisure, Travel, & Tourism
Lionel Friedman Photo 2

Lionel Friedman

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Publications

Us Patents

Silicon-Based Strain-Symmetrized Ge-Si Quantum Lasers

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US Patent:
61544752, Nov 28, 2000
Filed:
Dec 4, 1997
Appl. No.:
8/984857
Inventors:
Richard A. Soref - Newton Centre MA
Lionel R. Friedman - Holden MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01S 319
H01L 2906
US Classification:
372 45
Abstract:
A family of lasers is provided which can be readily grown upon silicon wafer platforms, each laser having a highly doped stably strained SiGe or Ge collector layer formed upon a SiGe graded relaxed buffer layer in turn grown on the Si wafer, and an intrinsic strain-symmetric Ge--Si superlattice covered by a heavily doped stably strained SiGe emitter. The superlattice has numerous thin 8-15 atomic monolayers of interleaved Ge and Si atoms, enabling high stack heights.

Direct-Gap Germanium-Tin Multiple-Quantum-Well Electro-Optical Devices On Silicon Or Germanium Substrates

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US Patent:
55481280, Aug 20, 1996
Filed:
Dec 14, 1994
Appl. No.:
8/355464
Inventors:
Richard A. Soref - Newton Centre MA
Lionel Friedman - Holden MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 2906
H01L 3300
H01L 310328
H01L 31117
US Classification:
257 18
Abstract:
Silicon-based laser diodes, optical amplifiers, electrooptical modulators, and photodetectors in which the active region consists of a pseudomorphic GeSn multiple quantum well stack. Each quantum well is tensile-strained Ge. sub. 1-x Sn. sub. x layer sandwiched between compressively strained barriers of Ge. sub. 1-y Sn. sub. y with x. about. 1, x

Silicon Double-Injection Electro-Optic Modulator With Insulated-Gate And Method Of Using Same

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US Patent:
49588982, Sep 25, 1990
Filed:
Mar 15, 1989
Appl. No.:
7/323738
Inventors:
Lionel Friedman - Holden MA
Richard A. Soref - Newton Centre MA
Assignee:
The United States of America as Represented by the Secretary of the Air
Force - Washington DC
International Classification:
G02B 610
H01L 2906
US Classification:
350 9614
Abstract:
A double-injection transistor structure with an MOS gate is utilized as a guided-wave electro-optic phase modulator at infrared wavelengths in a silicon-on-insulator (SOI) waveguide. Cathode, gate and anode regions are integrated in the waveguide, longitudinally. The effective phase modulation is given by the voltage-variable overlap of the guided-mode optical field with carrier-induced local changes in the silicon refractive index. An electron-hole plasma is injected under the gate by cathode and anode. Using depletion-layer widening, the plasma channel width and mode overlap are controlled very rapidly by one or two low-power gate electrodes.
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Lionel R Friedman from Bradenton, FL, age ~91 Get Report