Resumes
Resumes
Lex Kosowsky Phones & Addresses
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5561 Country Club Pkwy, San Jose, CA 95138 (408) 239-0822
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Olympic Valley, CA
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Foster City, CA
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Monroeville, PA
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5561 Country Club Pkwy, San Jose, CA 95138
Business Records
Name / Title
Company / Classification
Phones & Addresses
President
SHOCKING TECHNOLOGIES, INC
Commercial Physical Research · Mfg Plastic Materials/Resins
Commercial Physical Research · Mfg Plastic Materials/Resins
5870 Hellyer Ave, San Jose, CA 95138
(408) 578-5175
(408) 578-5175
Kosowsky Technology Associates, LLC
5561 Country Clb Pkwy, San Jose, CA 95138
President, Chief Executive Officer
Dms Technologies Inc
Manufactures Semiconductor Equipment
Manufactures Semiconductor Equipment
5561 Country Clb Pkwy, San Jose, CA 95138
(408) 239-0539
(408) 239-0539
President
DYNA-CRAFT, INC. II
PO Box 58090, Santa Clara, CA 95052
Publications
Us Patents
Current Carrying Structure Using Voltage Switchable Dielectric Material
View pageUS Patent:
6797145, Sep 28, 2004
Filed:
Dec 9, 2002
Appl. No.:
10/315496
Inventors:
Lex Kosowsky - San Jose CA, 95138
International Classification:
C25D 548
US Classification:
205221, 205103, 205104, 205118, 205125, 205157
Abstract:
An electrochemical processing method is provided for forming a current carrying device for semiconductor chip packaging and similar applications. The method comprises selecting sections of a substrate to carry current wherein a selected section is at least partly covered with a voltage switchable dielectric material, rendering the voltage switchable dielectric material conductive, and electrochemically forming a current carrying material directly on the voltage switchable dielectric material. The voltage switchable dielectric material can have a characteristic voltage, such that when a voltage having a magnitude exceeding the characteristic voltage is applied to the voltage switchable dielectric material, the voltage switchable dielectric material switches from a dielectric material to a conductive material. When conductive, the voltage switchable dielectric material is amenable to electrochemical processing such as electroplating.
Methods For Fabricating Current-Carrying Structures Using Voltage Switchable Dielectric Materials
View pageUS Patent:
7446030, Nov 4, 2008
Filed:
Sep 14, 2004
Appl. No.:
10/941226
Inventors:
Lex Kosowsky - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
H01L 21/4763
US Classification:
438623, 438 99, 438598, 438624, 257E21023, 257E21034
Abstract:
A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.
Device Applications For Voltage Switchable Dielectric Material Having High Aspect Ratio Particles
View pageUS Patent:
7695644, Apr 13, 2010
Filed:
Jul 29, 2007
Appl. No.:
11/881896
Inventors:
Lex Kosowsky - San Jose CA, US
Robert Fleming - San Jose CA, US
Robert Fleming - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
H01B 1/00
H01C 7/10
H01C 7/10
US Classification:
252500, 338 20
Abstract:
One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.
System And Method For Including Protective Voltage Switchable Dielectric Material In The Design Or Simulation Of Substrate Devices
View pageUS Patent:
7793236, Sep 7, 2010
Filed:
Sep 24, 2007
Appl. No.:
11/860530
Inventors:
Lex Kosowsky - San Jose CA, US
Robert Fleming - San Jose CA, US
Robert Fleming - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
G06F 17/50
US Classification:
716 2, 716 18
Abstract:
A substrate device is designed by identifying one or more criteria for handling of a transient electrical event on the substrate device. The one or more criteria may be based at least in part on an input provided from a designer. From the one or more criteria, one or more characteristics may be determined for integrating VSD material as a layer within or on at least a portion of the substrate device. The layer of VSD material may be positioned to protect one or more components of the substrate from the transient electrical condition.
Light-Emitting Device Using Voltage Switchable Dielectric Material
View pageUS Patent:
7825491, Nov 2, 2010
Filed:
Nov 21, 2006
Appl. No.:
11/562289
Inventors:
Lex Kosowsky - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
H01L 23/62
US Classification:
257530, 257 50, 257529, 257E23147, 338 21, 313580
Abstract:
A voltage switchable dielectric material (VSD) material as part of a light-emitting component, including LEDs and OLEDs.
Formulations For Voltage Switchable Dielectric Material Having A Stepped Voltage Response And Methods For Making The Same
View pageUS Patent:
7872251, Jan 18, 2011
Filed:
Sep 24, 2007
Appl. No.:
11/903820
Inventors:
Lex Kosowsky - San Jose CA, US
Robert Fleming - San Jose CA, US
Robert Fleming - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
H01L 47/00
US Classification:
257 3, 257 40, 257183, 257E45001, 438 99, 438900
Abstract:
Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.
Semiconductor Devices Including Voltage Switchable Materials For Over-Voltage Protection
View pageUS Patent:
7923844, Apr 12, 2011
Filed:
Nov 21, 2006
Appl. No.:
11/602881
Inventors:
Lex Kosowsky - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
H01L 23/28
US Classification:
257777, 257778, 257787, 257686, 257E23117
Abstract:
Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric cmaterial, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.
Method For Electroplating A Substrate
View pageUS Patent:
7968010, Jun 28, 2011
Filed:
Feb 10, 2010
Appl. No.:
12/703723
Inventors:
Lex Kosowsky - San Jose CA, US
Robert Fleming - San Jose CA, US
Robert Fleming - San Jose CA, US
Assignee:
Shocking Technologies, Inc. - San Jose CA
International Classification:
H01B 1/00
C25D 5/34
B05D 5/12
C25D 5/34
B05D 5/12
US Classification:
252500, 205205, 427101, 4271263
Abstract:
One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.