US Patent:
20110284048, Nov 24, 2011
Inventors:
Frank HAASS - Erzhausen, DE
Norbert B. ELSNER - La Jolla CA, US
Laverne Elsner - La Jolla CA, US
Saeid GHAMATY - La Jolla CA, US
Daniel KROMMENHOEK - San Diego CA, US
Assignee:
Hi - Z Technology, Inc. - San Diego CA
BASF SE - Ludwigshafen
International Classification:
H01L 35/12
H01L 35/34
US Classification:
1362361, 438 54, 136201, 257E2104
Abstract:
A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150 C. for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 10to 10cmand in the barrier layers is 10to 10cm.