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Laddawan Miko Phones & Addresses

  • 6605 Magnolia Ter, Lanham, MD 20706 (301) 552-3587
  • 6605 Magnolia Ave, Lanham, MD 20706 (301) 552-3587
  • Lanham Seabrook, MD
  • Berwyn Heights, MD
  • Greenbelt, MD
  • Reston, VA
  • Gainesville, FL

Work

Position: Professional/Technical

Education

Degree: Associate degree or higher

Publications

Us Patents

Detector For Dual Band Ultraviolet Detection

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US Patent:
20110284756, Nov 24, 2011
Filed:
Apr 22, 2011
Appl. No.:
13/092198
Inventors:
Laddawan R. Miko - Lanham MD, US
David E. Franz - Pasadena MD, US
Carl M. Stahle - Severna Park MD, US
Bing Guan - Bowie MD, US
Diane E. Pugel - College Park MD, US
Shahid Aslam - Washington DC, US
International Classification:
G01J 1/42
H01L 27/146
US Classification:
250372, 257440, 257E27134
Abstract:
The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n/n-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlGaN; a second band-edge comprising AlGaN; a third band-edge comprising AlGaN. The detector also has ohmic contacts formed on the AlGaN band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.

Detector For Dual Band Ultraviolet Detection

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US Patent:
20100012849, Jan 21, 2010
Filed:
Jul 21, 2008
Appl. No.:
12/176717
Inventors:
Laddawan R. Miko - Lanham MD, US
David Franz - Pasadena MD, US
Carl M. Stahle - Severna Park MD, US
Bing Guan - Bowie MD, US
Assignee:
United States of America as represented by the Administrator of the National Aeronautics and Spac - Washington DC
International Classification:
G01J 1/42
US Classification:
250372
Abstract:
The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n/n-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlGaN; a second band-edge comprising AlGaN; a third band-edge comprising AlGaN. The detector also has ohmic contacts formed on the AlGaN band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.
Laddawan R Miko from Lanham, MD, age ~67 Get Report