Search

Kathryn M Kelchner

from Port Charlotte, FL
Age ~46
Get Report
Also known as:
Kathyrn M Kelchner, Kate Kelchner
Phone and address:
18178 Petoskey Cir, Port Charlotte, FL 33948
(941) 764-0134
Related to:
Catherine Boyd, 37Ben Wallace, 37Heather WallaceTracy L Bodenheimer, 55Sarah Harley, 34Benjamin Wallace, 37
Connected to:
Paul B Kelchner, 98Justin W Kelcourse, 51Frank M Kelcz, 70Erik J Kelder, 45Sebastiaan Kelder, 32Wendy G Kelder, 61Benjamin J Kelderhouse, 46Lindley J Kelderhouse, 79Hannah M Kelderman, 41Michael Kelderman, 32

Kathryn Kelchner Phones & Addresses

  • 18178 Petoskey Cir, Pt Charlotte, FL 33948 (941) 764-0134
  • Port Charlotte, FL
  • Portland, OR
  • Santa Barbara, CA
  • San Luis Obispo, CA
  • Rosamond, CA
  • Waldorf, MD
  • Lancaster, CA

Interests

career opportunities, consulting offers,...

Resumes

Resumes

Kathryn Kelchner Photo 1

Kathryn Kelchner

View page
Location:
United States

Publications

Us Patents

Semipolar Iii-Nitride Laser Diodes With Etched Mirrors

View page
US Patent:
20110170569, Jul 14, 2011
Filed:
Oct 20, 2010
Appl. No.:
12/908478
Inventors:
Anurag Tyagi - Goleta CA, US
Robert M. Farrell - Goleta CA, US
Chia-Yen Huang - Goleta CA, US
Po Shan Hsu - Arcadia CA, US
Daniel A. Haeger - Goleta CA, US
Kathryn M. Kelchner - Santa Barbara CA, US
Hiroaki Ohta - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Goleta CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01S 5/323
H01L 33/02
H01L 33/60
H01S 5/00
H01S 5/183
US Classification:
372 45013, 438 46, 438 29, 372 4401, 257E33023, 257E33068
Abstract:
A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.

Semi-Polar Iii-Nitride Optoelectronic Devices On M-Plane Substrates With Miscuts Less Than +/-15 Degrees In The C-Direction

View page
US Patent:
20110216795, Sep 8, 2011
Filed:
Mar 4, 2011
Appl. No.:
13/041120
Inventors:
Po Shan Hsu - Arcadia CA, US
Kathryn M. Kelchner - Santa Barbara CA, US
Robert M. Farrell - Goleta CA, US
Daniel A. Haeger - Goleta CA, US
Hiroaki Ohta - Tokyo, JP
Anurag Tyagi - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
S. James Speck - Goleta CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01S 5/343
H01L 33/06
H01L 33/18
US Classification:
372 44011, 257 13, 438 31, 257E33008, 257E33028
Abstract:
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

Superluminescent Diodes By Crystallographic Etching

View page
US Patent:
20110103418, May 5, 2011
Filed:
Oct 27, 2010
Appl. No.:
12/913638
Inventors:
Matthew T. Hardy - Goleta CA, US
You-Da Lin - Goleta CA, US
Hiroaki Ohta - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Kathryn M. Kelchner - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01S 5/323
H01L 33/22
H01L 21/302
US Classification:
372 4401, 257 98, 438 29, 257E33074, 257E21214
Abstract:
An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.

Conformal Damage-Free Encapsulation Of Chalcogenide Materials

View page
US Patent:
20200066987, Feb 27, 2020
Filed:
Aug 24, 2018
Appl. No.:
16/112503
Inventors:
- Fremont CA, US
Andrew John McKerrow - Lake Oswego OR, US
Meihua Shen - Fremont CA, US
Thorsten Lill - Santa Clara CA, US
Shane Tang - West Linn OR, US
Kathryn Merced Kelchner - Portland OR, US
John Hoang - Fremont CA, US
Alexander Dulkin - Sunnyvale CA, US
Danna Qian - San Jose CA, US
Vikrant Rai - Sherwood OR, US
International Classification:
H01L 45/00
H01L 21/02
H01L 21/67
Abstract:
Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Semi-Polar Iii-Nitride Optoelectronic Devices On M-Plane Substrates With Miscuts Less Than +/- 15 Degrees In The C-Direction

View page
US Patent:
20180152004, May 31, 2018
Filed:
Jan 26, 2018
Appl. No.:
15/880999
Inventors:
- Oakland CA, US
Kathryn M. Kelchner - Portland OR, US
Robert M. Farrell - Goleta CA, US
Daniel A. Haeger - Goleta CA, US
Hiroaki Ohta - Tokyo, JP
Anurag Tyagi - San Jose CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01S 5/343
H01L 31/036
Abstract:
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

Method For Depositing Ald Films Using Halide-Based Precursors

View page
US Patent:
20180102245, Apr 12, 2018
Filed:
Nov 20, 2017
Appl. No.:
15/817579
Inventors:
- Fremont CA, US
Jon Henri - West Linn OR, US
Ramesh Chandrasekharan - Portland OR, US
Andrew John McKerrow - Lake Oswego OR, US
Seshasayee Varadarajan - Lake Oswego OR, US
Kathryn Merced Kelchner - Portland OR, US
Assignee:
LAM RESEARCH CORPORATION - Fremont CA
International Classification:
H01L 21/02
H01J 37/32
C23C 16/02
C23C 16/50
C23C 16/455
C23C 16/34
Abstract:
A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

Semi-Polar Iii-Nitride Optoelectronic Devices On M-Plane Substrates With Miscuts Less Than +/- 15 Degrees In The C-Direction

View page
US Patent:
20150255959, Sep 10, 2015
Filed:
May 26, 2015
Appl. No.:
14/721729
Inventors:
- Oakland CA, US
Kathryn M. Kelchner - Santa Barbara CA, US
Robert M. Farrell - Goleta CA, US
Daniel A. Haeger - Goleta CA, US
Hiroaki Ohta - Tokyo, JP
Anurag Tyagi - San Jose CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01S 5/343
H01L 33/00
H01L 33/16
H01S 5/20
H01L 31/0735
H01L 31/036
H01L 31/0304
H01S 5/32
H01L 33/06
H01L 33/32
Abstract:
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

Plasma Enhanced Atomic Layer Deposition With Pulsed Plasma Exposure

View page
US Patent:
20140113457, Apr 24, 2014
Filed:
Dec 30, 2013
Appl. No.:
14/144107
Inventors:
- Fremont CA, US
Jon Henri - West Linn OR, US
Kathryn M. Kelchner - Portland OR, US
Sathish Babu S. V. Janjam - Albany OR, US
Shane Tang - West Linn OR, US
International Classification:
H01L 21/02
C23C 16/515
US Classification:
438792, 118696, 438778
Abstract:
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.
Control profile
Kathryn M Kelchner from Port Charlotte, FL, age ~46 Get Report