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Karl H Zaininger

from Princeton, NJ
Age ~95
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Also known as:
Karl Dr Zaininger, Karl S Zaininger, Carl Zaininger, Sophia Zaininger
Phone and address:
9 E Shore Dr, Princeton, NJ 08540
(609) 737-0706
Related to:
John Hamilton GradwellH Lydia Zaininger, 63Alexander K Zaininger, 65Charlotte A Zaininger, 28Sophia Zaininger, 94Leslie A Campbell, 65Mark L Zaininger
Connected to:
Sheila K Zaininger, 68Benny Zaino, 82Betty J Zaino, 88Michele Zaino, 55Salvatore M Zaino, 76Achmad Zainuddin, 54Hani R Zainulbhai, 39Mohammed Zainullabuddin, 39Frank G Zaio, 67Nicole L Zais, 35

Karl Zaininger Phones & Addresses

  • 9 E Shore Dr, Princeton, NJ 08540 (609) 737-0706 (609) 780-3797
  • 79 Bayberry Rd, Princeton, NJ 08540 (609) 737-0706
  • 434 High Rd, Glen Spey, NY 12737 (609) 737-0706
  • Hopewell, NJ
  • 5501 Heron Point Dr, Naples, FL 34108 (239) 566-7414 (941) 566-7414 (609) 737-0706
  • Cherry Hill, NJ

Business Records

Name / Title
Company / Classification
Phones & Addresses
Karl H. Zaininger
Managing Director
Knite Inc
Mfg Electrical Equipment
501 Forrestal Rd, Princeton, NJ 08540
18 W Piper Ave, Trenton, NJ 08628
(609) 258-9550

Publications

Us Patents

Method Of Making Planar Silicon-On-Sapphire Composite

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US Patent:
40765733, Feb 28, 1978
Filed:
Dec 30, 1976
Appl. No.:
5/755966
Inventors:
Joseph Michael Shaw - Middlesex NJ
Karl Heinz Zaininger - Princeton NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H01L 21205
US Classification:
156613
Abstract:
A method is provided for the manufacture of a semi-planar silicon-on-sapphire composite comprising a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa. An essential step in the method is deposition of the aluminum oxide simultaneously adjacent the sapphire substrate and the monocrystalline silicon mesa whereby aluminum oxide formed adjacent the silicon mesa is polycrystalline and aluminum oxide deposited adjacent the sapphire substrate is monocrystalline. This enables the selective removal of the polycrystalline aluminum oxide adjacent the surface of the monocrystalline silicon mesa, thereby forming the composite.

Planar Silicon-On-Sapphire Composite

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US Patent:
41339258, Jan 9, 1979
Filed:
Jan 6, 1978
Appl. No.:
5/867618
Inventors:
Joseph M. Shaw - East Windsor Township, Mercer County NJ
Karl H. Zaininger - Princeton NJ
Assignee:
RCA Corp. - New York NY
International Classification:
B01J 1700
H01L 2300
US Classification:
428195
Abstract:
A semi-planar silicon-on-sapphire composite comprises a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa.

Method Of Manufacturing Apertured Aluminum Oxide Substrates

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US Patent:
40690946, Jan 17, 1978
Filed:
Dec 30, 1976
Appl. No.:
5/755968
Inventors:
Joseph Michael Shaw - Cranbury NJ
Karl Heinz Zaininger - Princeton NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H01L 21205
US Classification:
156612
Abstract:
A method for making an apertured aluminum oxide substrate by selectively masking a sapphire wafer, depositing aluminum oxide adjacent the wafer and the mask, and removing the aluminum oxide deposited adjacent the mask and the mask, whereby an aperture is formed in the aluminum oxide. A composite is thus formed of an insulating substrate of monocrystalline sapphire with an insulating epitaxial layer of aluminum oxide apposed thereto, the epitaxial layer having an aperture therein which may be filled with an island of epitaxial silicon.
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Karl H Zaininger from Princeton, NJ, age ~95 Get Report