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Justin W Kamplain

from Bartlesville, OK
Age ~44
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Also known as:
Justin Wade Kamplain, Hilary B Kamplain, Justin W Camplain, Christina Awari
Phone and address:
2003 Neptune Ct, Bartlesville, OK 74006
Related to:
Regina H Camplain, 57
Connected to:
Anthony J Kampling, 65Carolyn S Kampman, 84Christine M Kampmann, 53Erik J Kampman, 38Mel J Kampmann, 93Michael A Kampman, 59Vicky Kampman, 64Wendy Kampman, 50Eve E Kampmeinert, 59Patricia M Kampmeyer, 36

Justin Kamplain Phones & Addresses

  • 2003 Neptune Ct, Bartlesville, OK 74006
  • Kingwood, TX
  • Tulsa, OK
  • 3 Wachusett Ave, Ayer, MA 01432 (978) 391-4562
  • Hutto, TX
  • Leominster, MA
  • Hobbs, NM
  • 1906 Windstone Dr, Bartlesville, OK 74006 (978) 391-4562

Work

Position: Clerical/White Collar

Education

Degree: High school graduate or higher

Resumes

Resumes

Justin Kamplain Photo 1

Analytical Sciences Team Leader

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Location:
5227 Walnut Peak Ct, Kingwood, TX 77345
Industry:
Chemicals
Work:
Chevron Phillips Chemical Company
Analytical Sciences Team Leader
Chevron Phillips Chemical Company
Stabilization Chemist-Polymer Durability
Chevron Phillips Chemical Company Apr 2014 - Dec 2015
Research Chemist-Polyethylene Catalyst and Product Development
Chevron Phillips Chemical Company Jul 2012 - Apr 2014
Research Chemist-Engineering Polymers
Qd Vision, Inc. Jun 2011 - Jul 2012
Group Leader - Chemistry R and D
Education:
The University of Texas at Austin 2004 - 2008
Oklahoma Christian University 2001 - 2004
Bachelors, Bachelor of Science, Chemistry Hobbs High School
University of Texas
Texas A&M University
Skills:
Chemistry
Materials Science
Polymers
Catalysis
R&D
Nanoparticles
Spectroscopy
Characterization
Organic Synthesis
Organic Chemistry
Nanotechnology
Nanomaterials
Organometallics
Inorganic Chemistry
Nmr
Uv/Vis
Ir
Research and Development
Thin Films
Semiconductors
Tga
Dsc
Modulated Dsc
Gpc
Hplc
Design of Experiments
Research and Development
Lc/Tof Ms
Nuclear Magnetic Resonance
Polymer Chemistry
Formulation
Polymer Additives
Justin Kamplain Photo 2

Justin Kamplain

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Publications

Us Patents

Semiconductor Nanocrystals And Methods Of Preparation

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US Patent:
20130069018, Mar 21, 2013
Filed:
Aug 10, 2012
Appl. No.:
13/572012
Inventors:
ZHENGGUO ZHU - Chelmsford MA, US
Jonathan S. Steckel - Carlisle MA, US
Craig Breen - Somerville MA, US
Justin W. Kamplain - Bartlesville OK, US
Inia Song - Watertown MA, US
Chunming Wang - Acton MA, US
International Classification:
C01B 25/08
H01B 1/12
B82Y 30/00
B82Y 40/00
US Classification:
2525193, 423299, 977773, 977896, 977774, 977818
Abstract:
A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

Semiconductor Nanocrystals, A Method For Preparing A Semiconductor Nanocrystal, And Product Including Same

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US Patent:
20170069786, Mar 9, 2017
Filed:
Jun 13, 2016
Appl. No.:
15/180630
Inventors:
- LEXINGTON MA, US
JUSTIN W. KAMPLAIN - BARTLESVILLE OK, US
International Classification:
H01L 33/06
C22C 1/00
H01L 33/26
C22C 30/06
Abstract:
Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

Process For Preventing Thiophenol Formation And/Or Accumulation During Production Of Poly(Arylene Sulfide)

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US Patent:
20160075832, Mar 17, 2016
Filed:
Sep 11, 2014
Appl. No.:
14/483326
Inventors:
- Brussels, BE
Justin W. Kamplain - Bartlesville OK, US
R. Shawn Childress - Bartlesville OK, US
Jeffrey S. Fodor - Bartlesville OK, US
International Classification:
C08G 75/14
Abstract:
A process for producing a poly(arylene sulfide) polymer comprising (a) polymerizing reactants in a reaction vessel to produce a poly(arylene sulfide) reaction mixture, (b) processing at least a portion of the poly(arylene sulfide) reaction mixture to obtain a poly(arylene sulfide) reaction mixture downstream product, and (c) contacting a reactive aryl halide with at least a portion of the poly(arylene sulfide) reaction mixture and/or downstream product thereof, wherein before and/or after the contacting, the poly(arylene sulfide) reaction mixture and/or downstream product thereof comprise less than about 0.025 wt. % thiophenol, based on the total weight of the poly(arylene sulfide) reaction mixture and/or downstream product thereof.

Semiconductor Nanocrystals And Methods Of Preparation

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US Patent:
20150166341, Jun 18, 2015
Filed:
Nov 15, 2014
Appl. No.:
14/542586
Inventors:
Charles Hamilton - Oak Park IL, US
Justin W. Kamplain - Bartlesville OK, US
Catherine Mauck - Chicago IL, US
Whitney Miller - Lowell MA, US
Jonathan S. Steckel - Cupertino CA, US
Chunming Wang - Acton MA, US
Zhiming Wang - Port Lavaca TX, US
International Classification:
C01B 25/08
C09K 11/70
H01L 33/50
Abstract:
A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.

Method Of Making Semiconductor Nanocrystals

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US Patent:
20140312286, Oct 23, 2014
Filed:
Feb 17, 2014
Appl. No.:
14/182101
Inventors:
- LEXINGTON MA, US
JUSTIN W. KAMPLAIN - BARTLESVILLE OK, US
Assignee:
QD VISION, INC. - LEXINGTON MA
International Classification:
H01L 33/30
H01L 33/00
H01L 33/26
US Classification:
2525194, 423299, 4271261
Abstract:
A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.
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Justin W Kamplain from Bartlesville, OK, age ~44 Get Report