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Jun Xue

from Los Altos Hills, CA
Age ~59
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Also known as:
Xue Jun, Jun Zue
Related to:
Chenghan XueWillian XueYue XueAngela Xue, 27
Connected to:
Alice M Xue, 26Anbing Xue, 46Cheng G Xue, 51Dixie Xue, 44Edwin J Xue, 30Fei Xue, 42Grace H Xue, 31Guiping Xue, 56Junkai Xue, 42Nianwen Xue, 58

Jun Xue Phones & Addresses

  • Los Altos Hills, CA
  • 4601 Catalina Dr, San Jose, CA 95129 (408) 252-3821
  • 18829 Bellgrove Cir, Saratoga, CA 95070 (408) 366-2095 (408) 366-2533
  • Santa Clara, CA
  • Cupertino, CA

Resumes

Resumes

Jun Xue Photo 1

Jun Xue

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Jun Xue Photo 2

Jun Kelly Xue Hayward, CA

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Work:
Amax Engineering Corp

2003 to 2000
Project buyer
Education:
Northwestern Polytechnic University
Fremont, CA
Apr 2003
MBA
American College of Switzerland
Dec 2000
Bachelor of Business Administration

Publications

Us Patents

Dry Etch Processes

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US Patent:
20130115778, May 9, 2013
Filed:
Aug 22, 2012
Appl. No.:
13/591915
Inventors:
Jun Xue - San Jose CA, US
Jie Liu - Sunnyvale CA, US
Yongmei Chen - San Jose CA, US
Timothy Michaelson - Milpitas CA, US
Paul Deaton - San Jose CA, US
Timothy W. Weidman - Sunnyvale CA, US
Christopher S. Ngai - Burlingame CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/311
H01L 21/3065
US Classification:
438703, 438710, 438694, 257E21218, 257E21252
Abstract:
Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO, HfBO, ZrO, ZrBO, to a plasma comprising BCland argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.

Selectively Etching For Nanowires

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US Patent:
20210272814, Sep 2, 2021
Filed:
Jul 12, 2019
Appl. No.:
17/257241
Inventors:
- Fremont CA, US
Jun XUE - San Jose CA, US
Samantha SiamHwa TAN - Fremont CA, US
Yang PAN - Los Altos CA, US
Younghee LEE - Pleasanton CA, US
Alexander KABANSKY - Santa Clara CA, US
International Classification:
H01L 21/3065
H01L 21/02
Abstract:
A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15 C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

Atomic Layer Etching System With Remote Plasma Source And Dc Electrode

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US Patent:
20170200587, Jul 13, 2017
Filed:
Jan 5, 2017
Appl. No.:
15/399084
Inventors:
- Santa Clara CA, US
Jun XUE - San Jose CA, US
Sang Ki NAM - Danville CA, US
International Classification:
H01J 37/32
H01L 21/3065
Abstract:
Implementations described herein relate to apparatus and methods for performing atomic layer etching (ALE). Pulsed plasma generation and subsequent bias application to plasma afterglow may provide for improved ALE characteristics. Apparatus described herein provide for plasma generation from one or more plasma sources and biasing of plasma afterglow to facilitate material removal from a substrate.

3D Material Modification For Advanced Processing

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US Patent:
20170154776, Jun 1, 2017
Filed:
Feb 14, 2017
Appl. No.:
15/432368
Inventors:
- Santa Clara CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Erica CHEN - Cupertino CA, US
Jun XUE - San Jose CA, US
Ellie Y. YIEH - San Jose CA, US
Gary E. DICKERSON - Gloucester MA, US
International Classification:
H01L 21/033
H01L 21/3105
Abstract:
Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

Nanocrystaline Diamond Carbon Film For 3D Nand Hardmask Application

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US Patent:
20170062216, Mar 2, 2017
Filed:
Nov 10, 2016
Appl. No.:
15/348170
Inventors:
- Santa Clara CA, US
Christopher S. NGAI - Burlingame CA, US
Jingjing LIU - Milpitas CA, US
Jun XUE - San Jose CA, US
Chentsau YING - Cupertino CA, US
Ludovic GODET - Sunnyvale CA, US
International Classification:
H01L 21/033
H01L 27/115
Abstract:
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

Advanced Process Flow For High Quality Fcvd Films

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US Patent:
20160194758, Jul 7, 2016
Filed:
Mar 2, 2015
Appl. No.:
14/635589
Inventors:
- Santa Clara CA, US
Erica CHEN - Cupertino CA, US
Ludovic GODET - Sunnyvale CA, US
Jun XUE - San Jose CA, US
Ellie Y. YIEH - San Jose CA, US
International Classification:
C23C 16/56
C23C 16/32
C23C 14/48
C23C 16/36
C23C 16/40
C23C 16/30
C23C 16/34
Abstract:
Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

3D Material Modification For Advanced Processing

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US Patent:
20160163546, Jun 9, 2016
Filed:
Feb 4, 2015
Appl. No.:
14/613545
Inventors:
- Santa Clara CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Erica CHEN - Cupertino CA, US
Jun XUE - San Jose CA, US
Ellie Y. YIEH - San Jose CA, US
Gary E. DICKERSON - Gloucester MA, US
International Classification:
H01L 21/033
H01L 21/762
H01L 23/00
H01L 21/84
Abstract:
Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

Flowable Film Properties Tuning Using Implantation

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US Patent:
20160079034, Mar 17, 2016
Filed:
Sep 12, 2014
Appl. No.:
14/485505
Inventors:
- Santa Clara CA, US
Ludovic Godet - Sunnyvale CA, US
Jun Xue - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
DongQing (Karen) Li - Fremont CA, US
Erica Chen - Cupertino CA, US
International Classification:
H01J 37/317
Abstract:
Species are supplied to a flowable layer over a substrate. A property of the flowable layer is modified by implanting the species to the flowable layer. The property comprises a density, a stress, a film shrinkage, an etch selectivity, or any combination thereof.
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Jun Xue from Los Altos Hills, CA, age ~59 Get Report