Jun Amano

6396094, May 28, 2002

May 12, 2000

09/570185

Laura Wills Mirkarimi - Sunol CA
Jun Amano - Hillsborough CA

Agilent Technologies, Inc. - Palo Alto CA
Texas Instruments, Inc. - Dallas TX

H01L 2976

257295, 257296, 257300, 438 3

A means to minimize physical distortion and modifications in the electrical properties of ferroelectric films incorporated into semiconductor devices is proposed. By introducing crystallographic texture into these ferroelectric films, the piezoelectric coefficient of the material can be minimized, reducing the interaction between a voltage across and mechanical stress on the film. In addition to having low piezoelectric coefficients, rhombohedral lead zirconate titanate films oriented along (111) exhibit low coercive fields and high remnant polarization, increasing their usefulness in layered semiconductor devices.

6548343, Apr 15, 2003

Oct 31, 2000

09/702985

Scott R. Summerfelt - Cupertino CA
Theodore S. Moise - Los Altos CA
Guoqiang Xing - Plano TX
Luigi Colombo - Dallas TX
Tomoyuki Sakoda - San Jose CA
Stephen R. Gilbert - San Francisco CA
Alvin L. S. Loke - Singapore, SG
Shawming Ma - Sunnyvale CA
Rahim Kavari - Campbell CA
Jun Amano - Hillsborough CA

Agilent Technologies Texas Instruments Incorporated - Dallas TX

H01L 218242

438240, 438 3, 438250, 438393

An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure ( of FIG. ), the bottom electrode having a top surface and sides; forming a capacitor dielectric ( of FIG. ) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode ( and of FIG. ) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer ( and of FIG. ) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.

6872252, Mar 29, 2005

Mar 6, 2002

10/093342

Jun Amano - Hillsborough CA, US

Agilent Technologies, Inc. - Palo Alto CA

C30B025/18
C30B023/02
B32B015/00

117 84, 428643, 117 95

A method of forming a high quality epitaxial indium phosphide layer on a silicon substrate and a semiconductor device formed by the same method are described. In one aspect, a lead-based perovskite buffer is formed on a silicon substrate, and an epitaxial indium phosphide layer is formed on the lead-based perovskite buffer. In accordance with this approach, relatively large (e. g. , up to 300 millimeters in diameter) high quality indium phosphide films may be produced with the relatively high mechanical stability provided by silicon substrates. In this way, intrinsic problems associated with prior approaches that involve growth of high quality indium phosphide thin films on indium phosphide substrates, which are characterized by small wafer size, brittleness and high cost, may be avoided.

7032454, Apr 25, 2006

Mar 5, 2004

10/792891

Jun Amano - Hillsborough CA, US

Agilent Technologies, Inc. - Palo Alto CA

G01L 11/00

73704, 73702, 73717

A piezoelectric cantilever pressure sensor array is disclosed. The piezoelectric cantilever pressure sensor array contains a substrate, a readout circuit, and piezoelectric cantilever pressure sensors electrically connected to the readout circuit. Each piezoelectric cantilever pressure sensor contains an elongate piezoelectric cantilever mounted at one end on the substrate and extending over a cavity. The piezoelectric cantilever contains a piezoelectric layer sandwiched between two electrodes and generates a measurable voltage when deformed under pressure. The piezoelectric cantilever pressure sensor array can be manufactured at low cost and used in various applications including fingerprint identification devices.

7104134, Sep 12, 2006

Mar 5, 2004

10/792777

Jun Amano - Hillsborough CA, US
Mark A. Unkrich - Redwood City CA, US

Agilent Technologies, Inc. - Palo Alto CA

G01L 11/00

73704, 73702, 73706, 73715

A piezoelectric cantilever pressure sensor has a substrate and a piezoelectric cantilever having a base portion attached to the substrate and a beam portion suspended over a cavity. The piezoelectric cantilever contains a piezoelectric layer sandwiched between two electrodes and generates a measurable voltage when deformed under pressure. The piezoelectric cantilever pressure sensor can be manufactured at low cost and used in various applications including fingerprint identification devices.

7136215, Nov 14, 2006

May 18, 2005

11/131706

Akihiro Machida - Sunnyvale CA, US
Jun Amano - Hillsborough CA, US

Avago Technologies Fiber IP (Singapore) Pte. Ltd. - Singapore

G02B 26/00
G02B 26/08
G01B 5/28
G01J 5/00

359295, 359290, 359291, 359221, 359850, 73105, 2503381, 250306, 29 2535, 361278, 20419234

A piezoelectric spatial light modulator including a substrate having an array of cavities and piezoelectric cantilevers is arranged on the substrate. Each of the piezoelectric cantilevers includes a base portion on the substrate and a beam portion extending over a respective one of the cavities. Each of the piezoelectric cantilevers further includes a first electrode, a second electrode and a piezoelectric element between the electrodes. A flexible layer covers the cavities and the piezoelectric cantilevers and reflective elements are each located on the flexible layer over a respective one of the beam portions.

20050210988, Sep 29, 2005

Mar 5, 2004

10/792778

Jun Amano - Hillsborough CA, US
Farid Matta - Los Altos CA, US
Jeremy Theil - Mountain View CA, US
Stephen Gilbert - San Francisco CA, US

H01L021/00
H01L021/4763
G01L011/00

073704000, 438052000

A method for making piezoelectric cantilever pressure sensor array is disclosed. The method contains forming a layer structure comprising a substrate, an elastic layer, a first electrode layer, a piezoelectric layer, and a second electrode layer, defining piezoelectric cantilevers in the layer structure, defining Y-lines in the first electrode layer, forming X-lines; and creating a cavity under each piezoelectric cantilever. The piezoelectric cantilever pressure sensor array can be used in various applications including fingerprint identification devices.

20080081326, Apr 3, 2008

Oct 3, 2006

11/542504

Jun Amano - Hillsborough CA, US

C12Q 1/70
G01N 33/574
G01N 33/569
G01N 33/554
G01N 33/543
G01N 33/53

435 5, 435 731, 435 732, 435 723, 436518, 977902, 4352872

Methods, devices and apparatus are disclosed for analyzing a sample for the presence of one or more analytes. A sample is contacted with a well comprising a plurality of p-n junction nanowire pairs. One member of the nanowire pair comprises a capture moiety, and one member of the nanowire pair is an excitation nanowire and the other member is a detection nanowire. The contacting is carried out under conditions for binding of an analyte to a respective binding partner. The excitation nanowire is employed to excite a luminescent label bound to the capture moiety and the detection nanowire is used to detect a signal resulting from excitation of the luminescent label. The amount of the signal is related to the presence and/or amount of an analyte in the sample.