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Jonah H Jacob

from Brookline, MA
Age ~81

Jonah Jacob Phones & Addresses

  • 62 Beech Rd, Brookline, MA 02446 (617) 734-1401 (617) 734-7967
  • Cambridge, MA
  • Byfield, MA
  • Somerville, MA
  • Vienna, VA
  • North Billerica, MA
  • Thousand Oaks, CA
  • 62 Beech Rd, Brookline, MA 02446 (617) 759-3853

Work

Company: Science research laboratory, inc Address: 15 Ward St, Somerville, MA 02143 Phones: (617) 547-1122 Position: Chief executive officer/president Industries: Noncommercial Research Organizations

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jonah Jacob
Chief Executive Officer/president
Science Research Laboratory, Inc
Noncommercial Research Organizations
15 Ward St, Somerville, MA 02143
Jonah Jacob
Chief Executive Officer/president
Science Research Laboratory, Inc
Noncommercial Research Organizations
15 Ward St, Somerville, MA 02143
Jonah H. Jacob
Manager
LBJ FINANCIAL MANAGEMENT, LLC
15 Ward St, Somerville, MA 02143
Jonah H. Jacob
Manager
1K MASS AVE, LLC
15 Ward St, Somerville, MA 02143
Jonah H. Jacob
Manager
HORACE-WARD, LLC
15 Ward St, Somerville, MA 02143
Jonah H. Jacob
Manager
JACOB CONSOLIDATED HOLDINGS, LLC
15 Ward St, Somerville, MA 02143
Jonah H. Jacob
Manager
BENLIN PROPERTIES, LLC
15 Ward St, Somerville, MA 02143
Jonah Jacob
Real property
ONE GRIFFIN WAY, LLC
15 Ward St, Somerville, MA 02143
Jonah Jacob
President
ACCELERATOR APPLICATIONS, INC
15 Ward St, Somerville, MA 02143
62 Beech Rd, Brookline, MA 02146

Publications

Wikipedia

Jah Goldberg

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Jonah Jacob Goldberg (born March 21, 1969) is an American conservative syndicated columnist and author. Goldberg is known for his contributions on politics ...

Us Patents

Dense Plasma Focus Radiation Source

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US Patent:
7002168, Feb 21, 2006
Filed:
May 21, 2003
Appl. No.:
10/442544
Inventors:
Jonah Jacob - Brookline MA, US
Joseph A. Mangano - Arlington VA, US
James Moran - Charlestown MA, US
Alexander Bykanov - Belmont MA, US
Rodney Petr - Acton MA, US
Mordechai Rokni - Jerusalem, IL
Assignee:
Cymer, Inc. - San Diego CA
International Classification:
H01J 35/00
US Classification:
250504R
Abstract:
A dense plasma focus radiation source for generating EUV radiation using Lithium vapor and including a coaxially disposed anode and cathode. The invention includes methods and apparatuses for enhancing the efficiency of EUV radiation production, for protecting, cooling and extending the life of the anode and cathode, for protecting and shielding collecting optics from debris and pressure disturbances in the discharge chamber, and for feeding Lithium into the discharge chamber.

Methods And Systems For High-Data-Rate Quantum Cryptography

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US Patent:
7113598, Sep 26, 2006
Filed:
May 13, 2004
Appl. No.:
10/844903
Inventors:
Allen M. Flusberg - Newton MA, US
Jonah H. Jacob - Brookline MA, US
Martin A. Jaspan - Somerville MA, US
Israel Smilanski - Cambridge MA, US
Assignee:
Science Research Laboratory, Inc. - Somerville MA
International Classification:
H04K 1/00
US Classification:
380256, 380277, 380278, 380263, 380283
Abstract:
Methods and systems enabling enhanced bit-rate QKD fiber-based key delivery. In one embodiment, a secure communications network of this invention includes a number of communication nodes, each of the communication nodes being connected to a quantum channel. At least one of the communication nodes (a sending node) includes a multiplexing system capable of assembling a succession of substantially single photons in a predetermined order. At least another of the communication nodes (a receiving node) includes a receiving system capable of receiving at least some of the assembled succession of substantially single photons, a demultiplexing system capable of separating the received assembled succession of substantially single photons into a number of separated successions of substantially single photons, and, a number of detector systems, each one of the detector systems being capable of detecting one separated succession of the successions of substantially single photons.

Methods And Systems For Semiconductor Diode Junction Protection

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US Patent:
7505493, Mar 17, 2009
Filed:
Feb 10, 2006
Appl. No.:
11/351700
Inventors:
Jonah H. Jacob - Brookline MA, US
Assignee:
Science Research Laboratory, Inc. - Somerville MA
International Classification:
H01S 3/13
US Classification:
372 29015, 372 32, 372 3802
Abstract:
Protection methods and protection systems for semiconductor devices with diode junctions.

Methods And Systems For Semiconductor Diode Junction Screening And Lifetime Estimation

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US Patent:
7592825, Sep 22, 2009
Filed:
Aug 22, 2006
Appl. No.:
11/508054
Inventors:
Jonah H. Jacob - Brookline MA, US
Assignee:
Science Research Laboratory, Inc. - Somerville MA
International Classification:
G01R 31/00
US Classification:
324765, 324767
Abstract:
Screening methods and systems that can detect semiconductor junction devices that may exhibit sudden failure.

Methods And Systems For Laser Diode Control

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US Patent:
7620084, Nov 17, 2009
Filed:
Mar 24, 2006
Appl. No.:
11/388843
Inventors:
Jonah H. Jacob - Brookline MA, US
Assignee:
Science Research Laboratory, Inc. - Somerville MA
International Classification:
H01S 5/068
US Classification:
372 29023, 372 29016
Abstract:
Methods and systems that enable the combining of laser diodes into a laser beam.

Methods And Systems For Semiconductor Diode Junction Protection

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US Patent:
7684960, Mar 23, 2010
Filed:
Oct 18, 2007
Appl. No.:
11/874562
Inventors:
Jonah H. Jacob - Brookline MA, US
Assignee:
Science Research Laboratory, Inc. - Somerville MA
International Classification:
G06F 11/30
US Classification:
702182, 702 58, 324767, 382154, 25037015, 372 36, 327538
Abstract:
Methods and systems for semiconductor diode junction protection.

Means For Improved Implementation Of Laser Diodes And Laser Diode Arrays

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US Patent:
8243766, Aug 14, 2012
Filed:
Sep 22, 2008
Appl. No.:
12/232655
Inventors:
Michael Huff - Oakton VA, US
Jonah Jacob - Brookline MA, US
International Classification:
H01S 3/04
US Classification:
372 36, 372 35, 372 34
Abstract:
A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Method For Bonding Of Semiconductor Component To A Substrate

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US Patent:
8377797, Feb 19, 2013
Filed:
Jul 27, 2010
Appl. No.:
12/844064
Inventors:
Aland K. Chin - Sharon MA, US
Jonah H. Jacob - Brookline MA, US
Maciej Thomas Knapczyk - Cambridge MA, US
Assignee:
Science Research Laboratory, Inc. - Somerville MA
International Classification:
H01L 21/30
US Classification:
438455, 438664, 257758, 257E2151
Abstract:
A method of attaching a semiconductor component to a heat-sink where the component is first placed onto a heat-sink substrate whose attachment surface comprises a malleable-metal film, a semiconductor component is placed onto the malleable-metal film, and pressure and heat is applied for a predetermined time to the stack including substrate with malleable-metal film and semiconductor component.
Jonah H Jacob from Brookline, MA, age ~81 Get Report